BAS116L
Low-leakage diode
4 May 2016 Product data sheet
1. General description
Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2
(SOD882) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Switching time typical: trr = 0.8 µs
Low leakage current typical: IR = 3 pA
Repetitive peak reverse voltage: VRRM ≤ 85 V
Low capacitance typical: Cd = 2 pF
Leadless ultra small SMD plastic package
Low package height of 0.48 mm
AEC-Q101 qualified
3. Applications
Low-leakage current applications
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reverse
voltage
Tj = 25 °C - - 85 V
IFforward current Tamb = 25 °C [1] - - 325 mA
VRreverse voltage Tj = 25 °C - - 75 V
VFforward voltage IF = 150 mA; Tj = 25 °C - - 1.25 V
IRreverse current VR = 75 V; Tj = 25 °C - 0.003 5 nA
trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
- 0.8 3 µs
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
21
Transparent
top view
DFN1006-2 (SOD882)
006aab040
2
1
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAS116L DFN1006-2 DFN1006-2: leadless ultra small plastic package; 2 terminals SOD882
7. Marking
Table 4. Marking codes
Type number Marking code
BAS116L J6
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 75 V
VRRM repetitive peak reverse
voltage
Tj = 25 °C
- 85 V
IFforward current Tamb = 25 °C [1] - 325 mA
IFRM repetitive peak forward
current
tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C - 700 mA
tp = 100 µs; Tj(init) = 25 °C; square wave - 4 A
tp = 1 ms; Tj(init) = 25 °C; square wave - 1.5 A
IFSM non-repetitive peak
forward current
tp = 1 s; Tj(init) = 25 °C; square wave - 0.5 A
[1] - 335 mWPtot total power dissipation Tamb ≤ 25 °C
[2] - 610 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Tamb (°C)
17512525 150100500 75
aaa-022907
0.2
0.1
0.3
0.4
IF
(mA)
0
FR4 PCB, standard footprint
Fig. 1. Forward current as a function of ambient temperature; derating curve
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 4 / 12
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 375 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - - 205 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[3] - - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[3] Soldering point of cathode tab.
aaa-022922
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
dut
y
c
y
c
l
e
=
1
0.05
0.01
0.5
0.33
0.25 0.2
0.1
0.02
0.75
0
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022923
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
dut
y
c
l
e
=
0.05
0.01
0.5
0.33
0.25 0.2
0.1
0.02
0.75
0
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 5 / 12
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IF = 1 mA; Tj = 25 °C - - 0.9 V
IF = 10 mA; Tj = 25 °C - - 1 V
IF = 50 mA; Tj = 25 °C - - 1.1 V
VFforward voltage
IF = 150 mA; Tj = 25 °C - - 1.25 V
VR = 75 V; Tj = 25 °C - 0.003 5 nAIRreverse current
VR = 75 V; Tj = 150 °C - 3 80 nA
Cddiode capacitance VR = 0 V; f = 1 MHz; Tamb = 25 °C - 2 - pF
trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
- 0.8 3 µs
aaa-022961
10-3
10-2
10-1
1
IF
(A)
10-4
VF (V)
0.0 2.01.50.5 1.0
(1)
(2)
(3)
(4)
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 4. Forward current as a function of forward voltage;
typical values
102
150 200
500
mlb754
100
10
1
10- 1
10- 2
10- 3
IR
(nA)
Tj(°C)
(1)
(2)
VR = 75 V
(1) Maximum values
(2) Typical values
Fig. 5. Reverse current as a function of junction
temperature
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 6 / 12
VR (V)
0 252010 155
aaa-022962
1.0
0.5
1.5
2.0
Cd
(pF)
0.0
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-020909
tp (ms)
10-1 103
102
1 10
1
10
IFSM
(A)
10-1
Based on square wave currents.
Tamb = 25 °C
Fig. 7. Non-repetitive forward current as a function of
pulse duration; maximum values
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 7 / 12
11. Test information
trr
(1)
+ IF
t
output signal
trtp
t
10 %
90 %
VR
input signal
V = VR+ IF× RS
RS= 50 ΩIF
D.U.T.
Ri= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
(1) IR = 1 mA
Fig. 8. Reverse recovery time test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Fig. 9. Package outline DFN1006-2 (SOD882)
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 8 / 12
13. Soldering
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×)
0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
Fig. 10. Reflow soldering footprint for DFN1006-2 (SOD882)
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 9 / 12
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
BAS116L v.1 20160504 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 10 / 12
15. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 11 / 12
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAS116L
Low-leakage diode
BAS116L All information provided in this document is subject to legal disclaimers.
Product data sheet 4 May 2016 12 / 12
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information......................................................... 7
12. Package outline.......................................................... 7
13. Soldering..................................................................... 8
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Date of release:
04 May 2016