F 139B (CB 76) TO 18 (CB 6) Silicon PNP transistors, general purpose (continued) Transistors PNP silicium, usage gnral (suite) Tamb = 25 C Vceo T (v) ha1e VeEsat | Case Prot VceR* | h21E* ic wv) to/tp TSi 76 Type Boitier (mw) Vcexe | min max (ma) max | ima Page BCW97A FF 13880 540 = 60100 200s 80 0,25 80/5 138 445 BCW 97 8 F139Bo 840 180 300s 80 0,26 50/5 135 445 BCY78V) TO18 390 32 120 220 -2 0,25 10/0,25 - 465 BCY 78 Vill TO 18 390 32. 180. 310 2 0,25 _ 10/0,25 465 BCY78IX _TO18 390 ~32 250 460 -2 0,25 10/025 465 : 465 BCY 78 X TO 18 390 ~32. 380 630 2 0,25 10/0,25 465 BcY79Vi TO18 300-458 ~120=2S*=2 2B 1002, "465 BcY79ViIl TO18 390 45 180 310 2 18 100/25 _ 465 BCY791X TO18 390 45 250 460 2 08 100/25 465 Bcy7ox TO1R 390 45 380 630 2 08 100/2,5 465 BSV 15 7039-3200 =~ 4040 500/25 50 500 703 BSV 16 TO 39 32007-6040 } 600/25 50 500 703 BSW 21 To 18 300 ~2 75 225 4-2 =05 50/3 150 2008 709 Bsw21A TO18 300 +-60 75 225 -2 O05 60/3 150-2008 ~~ 709 BSW 22 TO1e = 300 25 s180iCAC(itiC SCHOO C70 BSW 22 A TO 18 300 ~50 180 540 2 -05 50/3 150 2008 709 Silicon NPN transistors, low noise, low level amplification sro nse, Tow levi meation Tamb = 25 C Transistors NPN silicium, amplification faible bruit, faible niveau | hate VcEsat J fr F | Case | Prot VceEo | b21e* le (Vv) Io/lg (MHz) (dB) | TSi 76 Type Boitier | (mw) (Vv) mia max (mA) max (mA) min max \ Page 2N 929 TO.18 300 45 40 120 0.01 1 10105 30 4 125 #2N 930 | ToO.18 30045 100 800,01 1005 30 3 12 2N 2483 1018 360 60 40 120001i03Ssia11s(iasCii:;i;S #2N 2484 ~-TO1B = 360.is(<itiOOO~*C*KSCiTSCi Cia. ~SSt<~iMROSCC CNSNSCOC*#WROS BCY69__=s- TO '18 300 20-600" gon" 10/05 150 * Preferred device Typical value Plastic case : Tease = 60C VeE SEV Dispositif recommands Valeur typique Boitier plastique 2 Tease = 60C Vee <7 V 51