HYMD232726B8 - Hynix Semiconductor, Inc.

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.1/Oct. 02 1

32Mx72 bits

Unbuffered DDR SDRAM DIMM

HYMD232726B(L)8-M/K/H/L

DESCRIPTION

Hynix HYMD232726B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232726B(L)8-M/

K/H/L series consists of nine 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.

Hynix HYMD232726B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of

industry standard. It is suitable for easy interchange and addition.

Hynix HYMD232726B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs

are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-

ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.

All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and

burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD232726B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

ORDERING INFORMATION

Part No. Power Supply Clock Frequency Interface Form Factor

HYMD232726B(L)8-M

VDD=2.5V

VDDQ=2.5V

133MHz (*DDR266:2-2-2)

SSTL_2 184pin Unbuffered DIMM

5.25 x 1.25 x 0.15 inch

HYMD232726B(L)8-K 133MHz (*DDR266A)

HYMD232726B(L)8-H 133MHz (*DDR266B)

HYMD232726B(L)8-L 100MHz (*DDR200)

• 256MB (32M x 72) Unbuffered DDR DIMM based on

32Mx8 DDR SDRAM

• JEDEC Standard 184-pin dual in-line memory mod-

ule (DIMM)

• Error Check Correction (ECC) Capability

• 2.5V +/- 0.2V VDD and VDDQ Power supply

• All inputs and outputs are compatible with SSTL_2

interface

• Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

• All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

• Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

• Data inputs on DQS centers when write (centered

DQ)

• Data strobes synchronized with output data for read

and input data for write

• Programmable CAS Latency 2 / 2.5 supported

• Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

• tRAS Lock-out function supported

• Internal four bank operations with single pulsed RAS

• Auto refresh and self refresh supported

• 8192 refresh cycles / 64ms

* JEDEC Defined Specifications compliant

Rev. 0.1/Oct. 02 2

HYMD232726B(L)8-M/K/H/L

PIN DESCRIPTION

PIN ASSIGNMENT

Pin Pin Description Pin Pin Description

CK0,/CK0,CK1,/CK1,CK2,/CK2 Differential Clock Inputs VDDQ DQs Power Supply

CS0 Chip Select Input VSS Ground

CKE0 Clock Enable Input VREF Reference Power Supply

/RAS, /CAS, /WE Commend Sets Inputs VDDSPD Power Supply for SPD

A0 ~ A12 Address SA0~SA2 E2PROM Address Inputs

BA0, BA1 Bank Address SCL E2PROM Clock

DQ0~DQ63 Data Inputs/Outputs SDA E2PROM Data I/O

CB0~CB7 Check Bit WP Write Protect Flag

DQS0~DQS8 Data Strobe Inputs/Outputs VDDID VDD Identification Flag

DM0~DM8 Data-in Mask DU Do not Use

VDD Power Supply NC No Connection

Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name

1 VREF 32 A5 62 VDDQ 93 VSS 124 VSS 154 /RAS

2 DQ0 33 DQ24 63 /WE 94 DQ4 125 A6 155 DQ45

3 VSS 34 VSS 64 DQ41 95 DQ5 126 DQ28 156 VDDQ

4 DQ1 35 DQ25 65 /CAS 96 VDDQ 127 DQ29 157 /CS0

5 DQS0 36 DQS3 66 VSS 97 DM0 128 VDDQ 158 /CS1

6 DQ2 37 A4 67 DQS5 98 DQ6 129 DM3 159 DM5

7 VDD 38 VDD 68 DQ42 99 DQ7 130 A3 160 VSS

8 DQ3 39 DQ26 69 DQ43 100 VSS 131 DQ30 161 DQ46

9 NC 40 DQ27 70 VDD 101 NC 132 VSS 162 DQ47

10 NC 41 A2 71 NC 102 NC 133 DQ31 163 NC

11 VSS 42 Vss 72 DQ48 103 A13* 134 CB4 164 VDDQ

12 DQ8 43 A1 73 DQ49 104 VDDQ 135 CB5 165 DQ52

13 DQ9 44 CB0 74 VSS 105 DQ12 136 VDDQ 166 DQ53

14 DQS1 45 CB1 75 /CK2 106 DQ13 137 CK0 167 NC

15 VDDQ 46 VDD 76 CK2 107 DM1 138 /CK0 168 VDD

16 CK1 47 DQS8 77 VDDQ 108 VDD 139 VSS 169 DM6

17 /CK1 48 A0 78 DQS6 109 DQ14 140 DM8 170 DQ54

18 VSS 49 CB2 79 DQ50 110 DQ15 141 A10 171 DQ55

19 DQ10 50 VSS 80 DQ51 111 CKE1 142 CB6 172 VDDQ

20 DQ11 51 CB3 81 VSS 112 VDDQ 143 VDDQ 173 NC

21 CKE0 52 BA1 82 VDDID 113 BA2* 144 CB7 174 DQ60

22 VDDQ Key 83 DQ56 114 DQ20 key 175 DQ61

23 DQ16 53 DQ32 84 DQ57 115 A12 145 VSS 176 VSS

24 DQ17 54 VDDQ 85 VDD 116 VSS 146 DQ36 177 DM7

25 DQS2 55 DQ33 86 DQS7 117 DQ21 147 DQ37 178 DQ62

26 VSS 56 DQS4 87 DQ58 118 A11 148 VDD 179 DQ63

27 A9 57 DQ34 88 DQ59 119 DM2 149 DM4 180 VDDQ

28 DQ18 58 VSS 89 VSS 120 VDD 150 DQ38 181 SA0

29 A7 59 BA0 90 WP 121 DQ22 151 DQ39 182 SA1

30 VDDQ 60 DQ35 91 SDA 122 A8 152 VSS 183 SA2

31 DQ19 61 DQ40 92 SCL 123 DQ23 153 DQ44 184 VDDSPD

* These are not used on this module but may be used for other module in 184pin DIMM family

Rev. 0.1/Oct. 02 3

HYMD232726B(L)8-M/K/H/L

FUNCTIONAL BLOCK DIAGRAM

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

/CS

DM0

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS0

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

/CS

DM1

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS1

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

/CS

DM2

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS2

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

/CS

DM3

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS3

DM4

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

/CS

DM5

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS5

DQ48

DQ49

DQ50

DQ51

DQ52

DQ53

DQ54

DQ55

/CS

DM6

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS6

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

/CS

DM7

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS7

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS4

/CS0

SCL

BA0-BA1 BA0-BA1 : SDRAMs D0 - D8

A0 - A12 A0 - A12 : SDRAMs D0 - D8

/RAS /RAS : SDRAMs D0 - D8

/CAS /CAS : SDRAMs D0 - D8

CKE0 CKE : SDRAMs D0 - D8

/WE /WE : SDRAMs D0 - D8

Serial PD

A0 A1 A2

SA0 SA1 SA2

SDA

CB0

CB1

CB2

CB3

CB4

CB5

CB6

CB7

/CS

DM8

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS8

Notes:

1. DQ-to-I/O wiring is shown as recommended

but may be changed

2. DQ/DQS/DM/CKE/S relationships must be

maintained as shown

3. DQ, DQS, DM/DQS resistors : 22Ohms+/-5%

4. VDDID strap connections

(for memory device VDD, VDDQ) :

Strap out :(open) : VDD=VDDQ

Strap In (Vss) : VDD= VDDQ

VDD/VDDQ

VDDSPD

VREF

VSS

VDDID

SPD

D0 - D8

Strap:see Note 4

*Clock Wiring

Clock Input SDRAMs

*CK0,/CK0

*CK1,/CK1

*CK2,/CK2

3 SDRAMs

* W ire per clock loading table/wiring diagrams

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

/CS

DM0

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS0

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

/CS

DM1

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS1

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

/CS

DM2

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS2

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

/CS

DM3

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS3

DM4

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

/CS

DM5

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS5

DQ48

DQ49

DQ50

DQ51

DQ52

DQ53

DQ54

DQ55

/CS

DM6

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS6

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

/CS

DM7

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS7

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS4

/CS0

SCL

BA0-BA1 BA0-BA1 : SDRAMs D0 - D8

A0 - A12 A0 - A12 : SDRAMs D0 - D8

/RAS /RAS : SDRAMs D0 - D8

/CAS /CAS : SDRAMs D0 - D8

CKE0 CKE : SDRAMs D0 - D8

/WE /W E : SDRAMs D0 - D8

Serial PD

A0 A1 A2

SA0 SA1 SA2

SDA

CB0

CB1

CB2

CB3

CB4

CB5

CB6

CB7

/CS

DM8

I/O 7

I/O 6

I/O 1

I/O 0

I/O 5

I/O 4

I/O 3

I/O 2

DQS

DQS8

Notes:

1. DQ-to-I/O wiring is shown as recommended

but may be changed

2. DQ/DQS/DM/CKE/S relationships must be

maintained as shown

3. DQ, DQS, DM/DQS resistors : 22Ohms+/-5%

4. VDDID strap connections

(for memory device VDD, VDDQ) :

Strap out :(open) : VDD=VDDQ

Strap In (Vss) : VDD= VDDQ

Notes:

1. DQ-to-I/O wiring is shown as recommended

but may be changed

2. DQ/DQS/DM/CKE/S relationships must be

maintained as shown

3. DQ, DQS, DM/DQS resistors : 22Ohms+/-5%

4. VDDID strap connections

(for memory device VDD, VDDQ) :

Strap out :(open) : VDD=VDDQ

Strap In (Vss) : VDD= VDDQ

VDD/VDDQ

VDDSPD

VREF

VSS

VDDID

SPD

D0 - D8

Strap:see Note 4

VDDSPD

VREF

VSS

VDDID

SPD

D0 - D8

Strap:see Note 4

*Clock Wiring

Clock Input SDRAMs

*CK0,/CK0

*CK1,/CK1

*CK2,/CK2

3 SDRAMs

* W ire per clock loading table/wiring diagrams

*Clock Wiring

Clock Input SDRAMs

*CK0,/CK0

*CK1,/CK1

*CK2,/CK2

3 SDRAMs

* W ire per clock loading table/wiring diagrams

Rev. 0.1/Oct. 02 4

HYMD232726B(L)8-M/K/H/L

ABSOLUTE MAXIMUM RATINGS

Note : Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS= 0V)

Note :

1. VDDQ must not exceed the level of VDD.

2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.

3. The value of VREF is approximately equal to 0.5VDDQ.

AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)

Note :

1. VID is the magnitude of the difference between the input level on CK and the input on /CK.

2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.

Parameter Symbol Rating Unit

Ambient Temperature TA0 ~ 70 oC

Storage Temperature TSTG -55 ~ 125 oC

Voltage on Any Pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V

Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V

Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V

Output Short Circuit Current IOS 50 mA

Power Dissipation PD9W

Soldering Temperature Þ Time TSOLDER 260 / 10 oC / Sec

Parameter Symbol Min Typ. Max Unit Note

Power Supply Voltage VDD 2.3 2.5 2.7 V

Power Supply Voltage VDDQ 2.3 2.5 2.7 V 1

Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V

Input Low Voltage VIL -0.3 - VREF - 0.15 V 2

Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V

Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V 3

Parameter Symbol Min Max Unit Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.31 V

Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ + 0.6 V 1

Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

Rev. 0.1/Oct. 02 5

HYMD232726B(L)8-M/K/H/L

AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)

Parameter Value Unit

Reference Voltage VDDQ x 0.5 V

Termination Voltage VDDQ x 0.5 V

AC Input High Level Voltage (VIH, min) VREF + 0.31 V

AC Input Low Level Voltage (VIL, max) VREF - 0.31 V

Input Timing Measurement Reference Level Voltage VREF V

Output Timing Measurement Reference Level Voltage VTT V

Input Signal maximum peak swing 1.5 V

Input minimum Signal Slew Rate 1 V/ns

Termination Resistor (RT)50W

Series Resistor (RS)25W

Output Load Capacitance for Access Time Measurement (CL)30 pF

Rev. 0.1/Oct. 02 6

HYMD232726B(L)8-M/K/H/L

CAPACITANCE (TA=25oC, f=100MHz )

Note :

1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V

2. Pins not under test are tied to GND.

3. These values are guaranteed by design and are tested on a sample basis only.

OUTPUT LOAD CIRCUIT

Parameter Pin Symbol Min Max Unit

Input Capacitance A0 ~ A12, BA0, BA1 CIN1 95 110 pF

Input Capacitance /RAS, /CAS, /WE CIN2 95 110 pF

Input Capacitance CKE0 CIN3 65 80 pF

Input Capacitance CS0 CIN4 60 75 pF

Input Capacitance CK0, /CK0, CK1, /CK1, CK2,/CK2 CIN5 30 45 pF

Input Capacitance DM0 ~ DM8 CIN6 12 18 pF

Data Input / Output Capacitance DQ0 ~ DQ63, DQS0 ~ DQS8 CIO1 12 18 pF

Data Input / Output Capacitance CB0 ~ CB7 CIO2 12 18 pF

VREF

VTT

RT=50Ω

Zo=50Ω

CL=30pF

Output

Rev. 0.1/Oct. 02 7

HYMD232726B(L)8-M/K/H/L

DC CHARACTERISTICS I (TA=0 to 70oC, Voltage referenced to VSS = 0V)

Note :

1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V

2. DOUT is disabled, VOUT=0 to 2.7V

Parameter Symbol Min. Max Unit Note

Input Leakage

Current

Add, CMD, /CS, /CKE

ILI

-18 18

uA 1

CK, /CK -12 12

Output Leakage Current ILO -5 5 uA 2

Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA

Output Low Voltage VOL -V

TT - 0.76 V IOL = +15.2mA

Rev. 0.1/Oct. 02 8

HYMD232726B(L)8-M/K/H/L

DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)

Parameter Symbol Test Condition

Speed

Unit Note

-M -K -H -L

Operating Current IDD0

One bank; Active Precharge; tRC=tRC(min);

tCK= tCK(min); DQ,DM and DQS inputs

changing twice per clock cycle; address and

control inputs changing once per clock cycle

1080 990 990 900 mA

Operating Current IDD1

One bank; Active - Read - Precharge; Burst

Length=2; tRC=tRC(min); tCK=tCK(min);

address and control inputs changing once per

clock cycle

1080 990 990 900 mA

Precharge Power Down

Standby Current IDD2P All banks idle; Power down - mode; CKE=Low,

tCK=tCK(min) 90 1080

Idle Standby Current IDD2F

/CS=High, All banks idle; tCK=tCK(min); CKE=

High; address and control inputs changing

once per clock cycle. VIN=VREF for DQ, DQS

and DM

450 405 405 360 mA

Active Power Down

Standby Current IDD3P One bank active; Power down mode;

CKE=Low, tCK=tCK(min) 135 mA

Active Standby Current IDD3N

/CS=HIGH; CKE=HIGH; One bank; Active-

Precharge; tRC=tRAS(max); tCK=tCK(min);

DQ, DM and DQS inputs changing twice per

clock cycle; Address and other control inputs

changing once per clock cycle

540 495 495 450 mA

Operating Current IDD4R

Burst=2; Reads; Continuous burst; One bank

active; Address and control inputs changing

once per clock cycle; tCK=tCK(min);

IOUT=0mA

1530 1350 1350 1260

Operating Current IDD4W

Burst=2; Writes; Continuous burst; One bank

active; Address and control inputs changing

once per clock cycle; tCK=tCK(min); DQ, DM

and DQS inputs changing twice per clock cycle

1620 1530 1530 1440

Auto Refresh Current IDD5

tRC=tRFC(min) - 8*tCK for DDR200 at

100Mhz, 10*tCK for DDR266A & DDR266B at

133Mhz; distributed refresh

1620 1530 1530 1440

Self Refresh Current IDD6 CKE=<0.2V; External clock on;

tCK=tCK(min)

Normal 27 mA

Low Power 13.5 mA

Operating Current - Four

Bank Operation IDD7 Four bank interleaving with BL=4 Refer to the

following page for detailed test condition 2430 2340 2340 2250 mA

Rev. 0.1/Oct. 02 9

HYMD232726B(L)8-M/K/H/L

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)

Parameter Symbol

DDR266(2-2-2) DDR266A DDR266B DDR200

Unit Note

Min Max Min Max Min Max Min Max

Row Cycle Time tRC 60 - 65 - 65 - 70 - ns

Auto Refresh Row Cycle Time tRFC 75 - 75 - 75 - 80 - ns

Row Active Time tRAS 45 120K 45 120K 45 120K 50 120K ns

Active to Read with Auto

Precharge Delay tRAP 15 - 20 - 20 - 20 - ns 16

Row Address to Column Address

Delay tRCD 15 - 20 - 20 - 20 - ns

Row Active to Row Active Delay tRRD 15 - 15 - 15 - 15 - ns

Column Address to Column

Address Delay tCCD 1-1-1-1-CK

Row Precharge Time tRP 15 - 20 - 20 - 20 - ns

Write Recovery Time tWR 15 - 15 - 15 - 15 - ns

Write to Read Command Delay tWTR 1-1-1-1-CK

Auto Precharge Write Recovery

+ Precharge Time tDAL

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

-CK15

System Clock

Cycle Time

CL = 2.5

tCK

7.5 12 7.5 12 7.5 12 8.0 12 ns

CL = 2 7.5 12 7.5 12 10 12 10 12 ns

Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK

Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK

Data-Out edge to Clock edge

Skew tAC -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns

DQS-Out edge to Clock edge

Skew tDQSCK -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns

DQS-Out edge to Data-Out edge

Skew tDQSQ - 0.5 - 0.5 - 0.5 - 0.6 ns

Data-Out hold time from DQS tQH tHP

-tQHS -tHPmin

-tQHS -ns1, 10

Clock Half Period tHP min

(tCL,tCH) -min

(tCL,tCH) -ns1,9

Data Hold Skew Factor tQHS - 0.75 - 0.75 - 0.75 - 0.75 ns 10

Valid Data Output Window tDV tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns

Data-out high-impedance

window from CK, /CK tHZ -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns 17

Data-out low-impedance window

from CK, /CK tLZ -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns 17

Rev. 0.1/Oct. 02 10

HYMD232726B(L)8-M/K/H/L

AC CHARACTERISTICS (AC operating conditions unless otherwise noted) - continued -

Note :

1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.

2. Data sampled at the rising edges of the clock : A0~A12, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE.

3. For command/address input slew rate >=1.0V/ns

4. For command/address input slew rate >=0.5V/ns and <1.0V/ns

This derating table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns.

Input Setup / Hold Slew-rate Derating Table.

Parameter Symbol

DDR266(2-2-2) DDR266A DDR266B DDR200

Unit Note

Min Max Min Max Min Max Min Max

Input Setup Time (fast slew rate) tIS 0.9 - 0.9 - 0.9 - 1.1 - ns 2,3,5,6

Input Hold Time (fast slew rate) tIH 0.9 - 0.9 - 0.9 - 1.1 - ns 2,3,5,6

Input Setup Time (slow slew rate) tIS 1.0 - 1.0 - 1.0 - 1.1 - ns 2,4,5,6

Input Hold Time (slow slew rate) tIH 1.0 - 1.0 - 1.0 - 1.1 - ns 2,4,5,6

Input Pulse Width tIPW 2.2 2.2 2.2 2.5 ns 6

Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - 0.35 - CK

Write DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - 0.35 - CK

Clock to First Rising edge of

DQS-In tDQSS 0.72 1.28 0.75 1.25 0.75 1.25 0.75 1.25 CK

Data-In Setup Time to DQS-In

(DQ & DM) tDS 0.5 - 0.5 - 0.5 - 0.6 - ns 6,7,

11~13

Data-in Hold Time to DQS-In (DQ

& DM) tDH 0.5 - 0.5 - 0.5 - 0.6 - ns 6,7,

11~13

DQ & DM Input Pulse Width tDIPW 1.75 - 1.75 - 1.75 - 2 - ns

Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 CK

Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK

Write DQS Preamble Setup Time tWPRES 0 - 0-0-0-CK

Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - 0.25 - CK

Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK

Mode Register Set Delay tMRD 2 - 2-2-2-CK

Exit Self Refresh to Any Execute

Command tXSC 200 - 200 - 200 - 200 - CK 8

Average Periodic Refresh Interval tREFI - 15.6 - 15.6 - 15.6 - 15.6 us

Input Setup / Hold Slew-rate Delta tIS Delta tIH

V/ns ps ps

0.5 0 0

0.4 +50 0

0.3 +100 0

Rev. 0.1/Oct. 02 11

HYMD232726B(L)8-M/K/H/L

5. CK, /CK slew rates are >=1.0V/ns

6. These parameters quarantee device timing, but they are not necessarily tested on each device, and they may be quaranteed by

design or tester correlation.

7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS) : DQ, LDM/UDM.

8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete

Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.

9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device

(i.e. this value can be greater than the minimum specification limits for tCL and tCH).

10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of

tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel

to n-channel variation of the output drivers.

11. This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns.

Input Setup / Hold Slew-rate Derating Table.

12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below

VREF +/-310mV for a duration of up to 2ns.

13. I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and

DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate

1=0.5V/ns and Slew Rate2 = 0.4V/n then the Delta Inverse Slew Rate = -0.5ns/V.

14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times.

Signal transi tions through the DC region must be monotonic.

15. tDAL = (tDPL / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer.

tCK is equal to the actual system clock cycle time.

Example: For DDR266B at CL=2.5 and tCK = 7.5 ns,

tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67)

Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clock

16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be

tRAS - BL/2 x tCK.

17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced

to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).

Input Setup / Hold Slew-rate Delta tDS Delta tDH

V/ns ps ps

0.5 0 0

0.4 +75 +75

0.3 +150 +150

I/O Input Level Delta tDS Delta tDH

mV ps ps

+280 +50 +50

(1/SlewRate1)-(1/SlewRate2) Delta tDS Delta tDH

ns/V ps ps

000

+/-0.25 +50 +50

+/- 0.5 +100 +100

Rev. 0.1/Oct. 02 12

HYMD232726B(L)8-M/K/H/L

SIMPLIFIED COMMAND TRUTH TABLE

Note :

1. DM states are Don’t Care. Refer to below Write Mask Truth Table.

2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Registering duing Extended MRS or MRS.

Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP

period from Prechagre command.

3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented

to activated bank until CK(n+BL/2+tRP).

4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented

to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time

(tWR) is needed to guarantee that the last data has been completely written.

5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be

precharged.

Command CKEn-1 CKEn /CS /RAS /CAS /WE ADDR A10/

AP BA Note

Extended Mode Register Set H X LLLL OP code 1,2

Mode Register Set H X LLLL OP code 1,2

Device Deselect

HXXX

No Operation L H H H

Bank Active H X L L H H RA V 1

Read

H X LHLHCA

Read with Autoprecharge H1,3

Write

HXLHLLCA

Write with Autoprecharge H1,4

Precharge All Banks

HXLLHLX

HX1,5

Precharge selected Bank LV1

Read Burst Stop H X L H H L X 1

Auto Refresh H H L L L H X 1

Self Refresh

EntryH L LLLH

Exit L H

HXXX

LHHH

Precharge

Power Down

Mode

Entry H L

HXXX

LHHH 1

Exit L H

HXXX 1

LHHH 1

Active Power

Down Mode

Entry H L

HXXX

LVVV 1

Exit L H X 1

( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )

Rev. 0.1/Oct. 02 13

HYMD232726B(L)8-M/K/H/L

PACKAGE DIMENSIONS

2.30

0.91

17.80

0.700

0.394

10.0

0.098

2.5

(2) 0

5.077

Front

128.95

131.35

5.171

133.35

5.25

31.75

1.250

(2X)4.00

0.157

Side

(Front)

3.18

0 .125MAX

1.27+/-0.10

0.050+/-.004

Rev. 0.1/Oct. 02 14

SERIAL PRESENCE DETECT

SPD SPECIFICATION

(32Mx72 Unbuffered DDR DIMM)

Rev. 0.1/Oct. 02 15

HYMD232726B(L)8-M/K/H/L

SERIAL PRESENCE DETECT

Byte# Function Description

Function Supported Hexa Value

Note

M K H L M K H L

0Number of Bytes written into serial memory at module

manufacturer 128 Bytes 80h

1 Total number of Bytes in SPD device 256 Bytes 08h

2 Fundamental memory type DDR SDRAM 07h

3 Number of row address on this assembly 13 0Dh 1

4 Number of column address on this assembly 10 0Ah 1

5 Number of physical banks on DIMM 1Bank 01h

6 Module data width 72 Bits 48h

7 Module data width (continued) - 00h

8 Module voltage Interface levels(VDDQ) SSTL 2.5V 04h

9 DDR SDRAM cycle time at CAS Latency=2.5(tCK) 7.5ns 7.5ns 7.5ns 8.0ns 75h 75h 75h 80h 2

10 DDR SDRAM access time from clock at CL=2.5 (tAC) +/-0.75ns +/-0.8ns 75h 75h 75h 80h 2

11 Module configuration type ECC 02h

12 Refresh rate and type 7.8us & Self refresh 82h

13 Primary DDR SDRAM width x8 08h

14 Error checking DDR SDRAM data width x8 08h

15 Minimum clock delay for back-to-back random column

address(tCCD) 1 CLK 01h

16 Burst lengths supported 2,4,8 0Eh

17 Number of banks on each DDR SDRAM 4 Banks 04h

18 CAS latency supported 2, 2.5 0Ch

19 CS latency 0 01h

20 WE latency 1 02h

21 DDR SDRAM module attributes Differential Clock Input 20h

22 DDR SDRAM device attributes : General

+/-0.2Voltage tolerance,

Concurrent Auto Precharge

tRAS Lock Out

C0h

23 DDR SDRAM cycle time at CL=2.0(tCK) 7.5ns 7.5ns 10ns 10ns 75h 75h A0h A0h 2

24 DDR SDRAM access time from clock at CL=2.0(tAC) +/-0.75ns +/-0.8ns 75h 75h 75h 80h 2

25 DDR SDRAM cycle time at CL=1.5(tCK) - 00h 2

26 DDR SDRAM access time from clock at CL=1.5(tAC) - 00h 2

27 Minimum row precharge time(tRP) 15ns 20ns 20ns 20ns 3Ch 50h 50h 50h

28 Minimum row activate to row active delay(tRRD) 15ns 15ns 15ns 15ns 3Ch 3Ch 3Ch 3Ch

29 Minimum RAS to CAS delay(tRCD) 15ns 20ns 20ns 20ns 3Ch 50h 50h 50h

30 Minimum active to precharge time(tRAS) 45ns 45ns 45ns 50ns 2Dh 2Dh 2Dh 32h

31 Module row density 256MB 40h

32 Command and address signal input setup time(tIS) 0.9ns 0.9ns 0.9ns 1.1ns 90h 90h 90h B0h

33 Command and address signal input hold time(tIH) 0.9ns 0.9ns 0.9ns 1.1ns 90h 90h 90h B0h

34 Data signal input setup time(tDS) 0.5ns 0.5ns 0.5ns 0.6ns 50h 50h 50h 60h

35 Data signal input hold time(tDH) 0.5ns 0.5ns 0.5ns 0.6ns 50h 50h 50h 60h

36~40 Reserved for VCSDRAM Undefined 00h

41 Minimum active / auto-refresh time ( tRC) 60ns 65ns 65ns 70ns 3Ch 41h 41h 46h

42 Minimum auto-refresh to active/auto-refresh

command period(tRFC) 75ns 75ns 75ns 80ns 4Bh 4Bh 4Bh 50h

43 Maximum cycle time (tCK max) 12ns 12ns 12ns 12ns 30h 30h 30h 30h

44 Maximim DQS-DQ skew time(tDQSQ) 0.5ns 0.5ns 0.5ns 0.6ns 32h 32h 32h 3Ch

45 Maximum read data hold skew factor(tQHS) 0.75ns 0.75ns 0.75ns 0.75ns 75h 75h 75h 75h

46~61 Superset information(may be used in future) Undefined 00h

62 SPD Revision code Initial release 00h

63 Checksum for Bytes 0~62 - 9Ch C9h F4h 8Eh

Bin Sort :M(DDR266(2-2-2),K(DDR266A@CL=2)

H(DDR266B@CL=2.5),L(DDR200@CL=2)

Rev. 0.1/Oct. 02 16

HYMD232726B(L)8-M/K/H/L

SERIAL PRESENCE DETECT - continued -

Note :

1. The bank address is excluded

2. These value is based on the component specification

3. These bytes are programmed by code of date week & date year

4. These bytes apply to Hynix’s own Module Serial Number system

5. These bytes undefined and coded as ‘00h’

6. Refer to Hynix web site

Byte 85~86, Low power part

Byte # Function Description

Function Supported Hexa Value

Note

M K H L M K H L

64 Manufacturer JEDEC ID Code Hynix JEDEC ID ADh

65~71 --------- Manufacturer JEDEC ID Code - 00h

72 Manufacturing location

Hynix(Korea Area)

HSA(United States Area)

HSE(Europe Area)

HSJ(Japan Area)

Singapore

Asia Area

0*h

1*h

2*h

3*h

4*h

5*h

73 Manufacture part number(Hynix Memory Module) H 48h

74 -------- Manufacture part number(Hynix Memory Module) Y 59h

75 -------- Manufacture part number(Hynix Memory Module) M 4Dh

76 Manufacture part number (DDR SDRAM) D 44h

77 Manufacture part number(Memory density) 2 32h

78 Manufacture part number(Module Depth) 3 33h

79 ------- Manufacture part number(Module Depth) 2 32h

80 Manufacture part number(Module type) Blank 20h

81 Manufacture part number(Data width) 7 37h

82 -------Manufacture part number(Data width) 2 32h

83 Manufacture part number(Refresh, # of Bank.) 6(8K refresh,4Bank) 36h

84 Manufacture part number(Component Generation) B 42h

85 Manufacture part number(Component configuration) 8 38h

86 Manufacture part number(Hyphen) ‘-’ 2Dh

87 Manufacture part number(Minimum cycle time) M K H L 4Dh 4Bh 48h 4Ch

88~90 Manufacture part number(T.B.D) Blank 20h

91 Manufacture revision code(for Component) - -

92 Manufacture revision code (for PCB) - -

93 Manufacturing date(Year) - - 3

94 Manufacturing date(Week) - - 3

95~98 Module serial number - - 4

99~127 Manufacturer specific data (may be used in future) Undefined 00h 5

128~255 Open for customer use Undefined 00h 5

Byte # Function Description Function Supported Hexa Value Note

M K H L M K H L

85 Manufacture part number(Low power part) L 4Ch

86 Manufacture part number(Component configuration) 8 38h