AP03N70P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Repetitive Avalanche Rated D Fast Switching Speed Simple Drive Requirement G RoHS Compliant BVDSS 650V RDS(ON) 3.6 ID 3.3A S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits. G D TO-220 S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 3.3 A ID@TC=100 Continuous Drain Current, VGS @ 10V 2.1 A 10 A 54.3 W 0.44 W/ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 67 mJ IAR Avalanche Current 3 A EAR Repetitive Avalanche Energy 3 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 2.3 /W Rthj-a Thermal Resistance Junction-ambient Max. 62 /W Data & specifications subject to change without notice 200704051-1/4 AP03N70P-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 650 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.6A - - 3.6 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1.6A - 2 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=30V - - 100 nA ID=3A - 12 20 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=1mA Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5 - nC VDD=300V - 9 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=3A - 5 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 18 - ns tf Fall Time RD=100 - 6 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 45 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Min. Typ. IS=3A, VGS=0V - - 1.5 V IS=3A, VGS=0V, - 422 - ns dI/dt=100A/s - 2580 - nC Source-Drain Diode Symbol VSD Parameter 3 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25 , IAS=3A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP03N70P-A 2 4 10V 6.0V o T C =25 C o ID , Drain Current (A) 3 ID , Drain Current (A) 10V 5.0V T C =150 C 2 5.0V 1 4.5V 1 4.0V 1 4.5V V G =3.5V V G =4.0V 0 0 0 5 10 15 20 25 0 Fig 1. Typical Output Characteristics 15 20 25 3.0 I D =1.6A V G =10V Normalized RDS(ON) 1.1 Normalized BVDSS (V) 10 Fig 2. Typical Output Characteristics 1.2 1.0 2.0 1.0 0.9 0.8 0.0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 100 5 10 4 o T j = 150 C T j = 25 o C VGS(th) (V) IS (A) 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1 3 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70P-A f=1.0MHz VGS , Gate to Source Voltage (V) 16 10000 I D =3A V DS =480V 12 C (pF) C iss 8 100 C oss 4 C rss 0 1 0 4 8 12 16 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 ID (A) 10 10us 100ms 1 1ms 10ms 100ms 0 T c =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0 1 10 100 1000 10000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4