Siliconix DG189/190/191 AMomber of the TeMic Group High-Speed Drivers with Dual SPDT JFET Switches Features Benefits Applications Constant On-Resistance Over Entire Low Distortion Audio Switching Analog Range @ Eliminates Large Signal Errors @ Video Switching Low Leakage High Precision Sample/Hold Low Crosstalk @ High Bandwidth Capability Guidance and Control Systems Rad Hardness Fault Protection @ Aerospace Description The DG189/190/191 are precision du. double-throw (SPDT) analog switches design accurate switching of video and audio si ideally suited for applications requiring a_ on-resistance over the entire analog range; break-before-make switching 2 action, elinttating the inadvertent shorting between channels and the crosstalk which would result. In the on state, each switch conducts current equally well in either direction. In the off condition, the switches will block up to 20 V peak-to-peak, FEY. with feedthrough of less than 60 dB at 10 MHz. The major differen (DG18910 Q, DG errors are achieved akage current (Ip <2nA). Applications whith benefit from the flat J Functional Block Diagram and Pin Configuration Dual-In-Line Flat Package Y Di fp} ->fi] S; Sa 14 S3 NC 2 +~<} is] IN; Ds 13 D3 | D2 12 dD, Gr lia} V~ S, u 8; S3 Tt 13] VR IN) 10 IN; Gi, fa . =. 5 12 VL 8 VR mf fav NC j IN Top View [7] t~<}-fio} Refer to JAN38510 Information, Military Section a Dz [a | at. ro | S, *Common to Substrate and Case Top View Ordering Information DG189/190/191 Truth Table Logic ak SW 1y SW SW, SWy 25 to 85C 16-Pin Sidebraze 0 OFF ON 1 ON OFF Logic 0 < 0.8V Logic 1 2 2.4V Switches Shown for Logic 1 Input 16-Pin Sidebraze ~55 to 125C 14-Pin Flat Pack P-32167Rev. B (11/15/93) 1-25DG189/190/191 Siliconix Absolute Maximum Ratings Current (Sor D) DG189 20... eee eee eee 200 mA Current (S or D) DG190, DG191 ... ee eee 30mA Current (All Other Pins). ........- 2.0.0 e cece eee 30mA Storage Temperature 0.00... ec e eee 65 to 150C Power Dissipation? 16-Pin Sidebraze? 0... 02. cece eee ee eee 900 mw 14-Pin Flat Pack ... 0.2 e eee 900 mW Notes: a. All leads welded or soldered to PC Board. b, Derate 12 mW/C above 75C c. Derate 10 mW/C above 75C Specifications for DG189 Test Conditions A Suffix B Suffix Unless Otherwise Specified ~55 to 125C ~25 to 85C V+ =15V,V-=-15V,VL=5V Parameter Symbol Vr = 0V, Vin = 0.8 Vor2 VE Temp | Typ | Min? | Max? | Min | Max? | Unit Analog Switch oC oe Analog Signal Range VANALOG Full ~75 15 ~75 15 Drain-Source _ __ Room VS 10 15 On-Resistance DS(on) Is = ~10 mA, Vp = ~7.5V Full 20 25 Vs = +10V, Vp = F10V Room 0.05 10 15 Source Off V+ =10V,V- = -20V Hot 1000 300 Iscof Leakage Current (ofl) Room | 0.05 10 15 Vs=475V, Vp = F75V Hot 1000 300 Vs= 410V, Vp = F10V Room | 0.04 10 15 Drain Off V+ =10V,V- = -20V Hot 1000 300 | A Woo Leakage Current (of) Room | 0.03 10 15 Vg = +475V, Vp = F75V Hot 1000 300 Channel On ue Room -0.1 -2 -10 Leakage Current ID(on) Vp = Vs= 75 V Hot 200 ~200 Saturation Drain Current Ipss 2 ms Pulse Duration Room 300 mA Digital Input Input Current with I Vm =5V Room <0.01 10 10 Input Voltage High INH N= Hot 20 20 ; pA Input Current with _ Input Voltage Low In Vn = OV Full -30 250 250 Dynamic Characteristics Turn-On Time Time See Switching Time Test Circuit ns Vs=-5V,Ip=0 Vp = -5VIs =0 s=OV Ry = 752 Drain-Off f=1MHz pF Positive Supply Current Supply Current Vin = ( Logic IN=OVor5V Supply Current 1-26 P-32167Rev. B (11/15/93)Siliconix A Member of the TEMIC Group Specifications? for DG190 DG189/190/191 Test Conditions A Suffix B Suffix Unless Otherwise Specified 55 to 125C 25 to 85C V+ =15V,V- =-15V,VL=5V Parameter Symbol Vp = OV, Vin = 0.8 Vor2 vi Temp> | Typ | Min? | Max | Min | Max? | Unit AnalogSwitch _ _ Analog Signal Range VANALOG Full -75 15 -75 Drain-Source _ _ Room 18 30 50 On-Resistance TDs(on) Is = ~10 mA, Vp = 7.5V Full 60 75 @ Vs = 10V, Vp = F10V Room | 0.06 1 5 Source Off Ith V+ =10V,V- = -20V Hot 100 100 Leakage Current Room 0.1 1 5 Vg =t75V, Vp = F75V Hot 100 100 Vs = 10V, Vp = F10V Room 0.05 1 5 . V+ =10V,V- = -20V Hot 100 100 | 5A Drain Off Tp(ott) Leakage Current Room 0.06 1 5 Vs = +7.5V, Vp = FI5V Hot 100 100 Channel On ye Room |] 0.02 -2 -10 Leakage Current Ten) Vp = Vs = 7.5V 200 ~200 Digital Input Input Current with I Vin =5V Room | <0.01 10 10 Input Voltage High INH n* Hot 20 20 pA Input Current with _ _ _ Input Voltage Low In. Vin = 0V Full 30 250 250 Dynamic Characteristics Tura-On Time ton, 85 150 180 See Switching Time Test Circuit ns Turn-Off Time tott Room 95 130 150 Source-Off Capacitance Csyofty Vs = -5V,Ip=0 Room 9 Drain-Off Capacitance Corot) f= 1 MHz Vp = -5V,Is =0 Room 6 pF Channel-On Capacitance Cpony Vp = Vs =0V Room 14 Off Isolation OIRR f= 1MHz, Ry =75Q Room >50 Power Supplies = : Positive Supply Current I+ Room 0.6 15 Negative Su Current I- Room -2.7 ~ 8 pply Vin = OVor5V Logic Supply Current IL Room 3.4 45 Reference Supply Current Ip Room -1 2 P-32167Rev. B (11/15/93) 1-27DG189/190/191 Specifications for DG191 Siliconix AMember of the TEMIC Group Test Conditions A Suffix B Suffix Unless Otherwise Specified -55 to 125C 25 to 85C V+ =15V,V- =-ISVVL=5V Parameter Symbol VR=0V, Vin = 08 Vor2vE Temp? | Typ | Min? | Max? | Min | Max? | Unit Analog Signal Range VANALOG 710 Drain-Source . _ Room 35 75 On-Resistance TDS(on) Is = -10 mA, Vp = 7.5V Full 150 150 Vs = 10 V, Vp = F10V Room | 0.05 1 5 Source Off Itt V+ =10V, V- =-20V Hot 100 100 Leakage Current o Room 0.07 1 5 Vs = 10V, Vp = F10V Hot 10 100 Vs = 10V, Vp = 10V Room | 0.04 1 5 nA : V+ =10V, V- = -20V Hot 100 100 Drain Off Ipcott Leakage Current o Room 0.05 1 5 Vg = +10 V, Vp = 10V Hot 100 100 Channel On Vee Room | ~-0.03 -2 -10 Leakage Current ID(on) Vp = Vs= 10V Hot 200 200 Input Current with I Vm =5V Room | <0.01 10 10 Input Voltage High INH IN Hot 20 20 WA Input Current with = _ _ _ Input Voltage Low INL Vin =0V Fall 30 250 250 Turn-On Time ton . . Room 120 250 300 See Switching Time Test Circuit ns Turn-Off Time tote Room 100 130 150 Source-Off Capacitance Cscott) Vs =-5V,Ip =0 Room 9 Drain-Off Capacitance Cp off) f = 1 MHz Vp = -5ViIs = 0 Room 6 pF Channel-On Capacitance Cron) Vp = Vs =0V Room 14 Off Isolation f= 1 MHz, Ry = 75Q Room >50 dB Positive Supply Current I+ Room 0.6 1.5 15 Negative Supply Current I- Room -2.7 -5 -3 Vw = OV, or 5V mA Logic Supply Current Ip Room 3.1 4.5 4.5 Reference Supply Current Ip Room -1 -2 -2 Notes: meaegp 1-28 . Refer to PROCESS OPTION FLOWCHART (Section 5 of the 1994 Data Book or FaxBack number 7103). Room = 25C, Pull = as determined by the operating temperature suffix. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guaranteed by design, not subject to production test. Vin = input voltage to perform proper function. P-32167Rev. B (11/15/93)Siliconix DG189/190/191 A Member of the TaMIC Group Typical Characteristics Supply Current vs. Temperature Ip vs. Vyn and Temperature 5 100 Vint = 0 Vinn = 5V 4 80 B 3 = 60 & a 2 & 40 a 1 20 Tiny 0 0 -55 -35 -15 5 25 45 65 85 105 125 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) Temperature (C) Fps(on) S- Temperature Switching Time vs. Vp and Temperature (DG189) 230 DG191 ome Vp = 7.5 V 210 | Lon vp =-75V 190 = 2 a z 170 g g 150 g g 130 110 90 -50 ~25 0 25 50 75 100 125 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) Temperature (C) Leakage vs. Temperature (DG189) Switching Time vs. Vp and Temperature (DG190/191) 130 V+=10V V-=-20V 120 om VD = 75V VL=5V me Vp =-75V VR=0 110 100 90 Is, Ip (nA) 80 ton, toFF (ns) 70 60 50 25 45 65 85 105 125 -S5 -35 -15 5 28 45 65 85 105 125 Temperature (C) Temperature (C) P-32167-Rev. B (11/15/93) 1-29DG189/190/191 Typical Characteristics (Contd) Ip(orr vs. Temperature (DG190/191) 100 V+ =10V,V- =20V Vp = -10V,Vs = 10V 10 A B Suffix i A Suffix 0.1 25 45 65 85 105 125 Temperature (C) Capacitance vs. Vp or Vs (DG190/191) 20 18 Vinw = 0.8. V Ving = 2V 16 f= 1MHz 14 & 12 & a 10 3 8 Cs(off) 6 Coot 4 Capacitance is measured from test terminal 2 T tocommon. a -10 -8 -6 -4 -2 0 2 4 6 8 10 Vp or Vs Drain or Source Voltage (V) Schematic Diagram (Typical Channel) Cs,p (pF) ISO (dB) Siliconix A Member of the TEMIC Group Capacitance vs. Vp or Vs (DG189) f= 1 MHz -8 4 0 4 8 Vp or Vs Drain or Source Voltage (V} Off Isolation vs. Frequency DG190/191 V+=15VV-=-15V Vp =0,VL=5V RL = 75 2 Vin = 220mVpms 10 10 107 108 f Frequency (Hz) - O S Vi Ove dj of 1 - , < s IN | It i vas || 1-30 P-32167Rev. B (11/15/93)Siliconix ~ DG189/190/191 A Member of the TEMIC Group Test Circuits Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. +5V +15V g ? ton: Vg =3V ty <10 ns torr: Vs = -3V Logic te <10 ns Vi V+ Input D Vs1 4 of 4 O Vo : D L wept Tt fe Tg LIN te VR v- | J Switch = = -15V Output . -3V 90% Cy (includes fixture and stray capacitance) L Your = Vs *RU + Tpson) Figure 2. Switching Time Application Hints Yin 4 : : Logic Input V+ v~ Veo Vp Voltage Positive Supply | Negative Supply ||: Logic Supply | Reference Supply Vindtaniny/ Voltage Voltage Voltage. Voltage: : Vantomax). Switch * w Oo | oo | iy 1sb ~15 5 GND 2.0/0.8 -75 to15 DG189 DG190 10 20 5 GND 2.0/0.8 -12.5 to 10 12 -12 5 GND 2.0/0.8 4.5 to 12 15 -15 5 GND 2.0/0.8 -10 to 15 DG191 10 20 5 GND 2.0/0.8 -15 to 10 12 -12 5 GND 2.0/0.8 -7t0 12 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Electrical Parameter Chart based on V+ = 15 V, VL = 5 V, Vp = GND P-32167Rev. B (11/15/93) 1-31