Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Available in a plastic overmold package capable of delivering a minimum output power of 60 W, it is ideally suited for today's RF power amplifier applications. Parameter Thermal Resistance, Junction to Case Sym Value Unit RJC 1.0 C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range Sym VDSS VGS PD Value 65 -0.5, +15 175 Unit Vdc Vdc W -- TJ 1.0 200 W/C C TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09060GUM Figure 1. Available Package Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8--13: -- Output power (POUT): 14 W. -- Power gain: 18 dB. -- Efficiency: 29%. -- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): 750 kHz offset: -47 dBc. 1.98 MHz offset: -62 dBc. -- Input return loss: -14 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 60 W minimum output power. AGR09060GUM HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet July 2004 Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 100 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 450 A) Gate Quiescent Voltage (VDS = 28 V, IDQ = 550 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Symbol Min Typ Max Unit V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1.3 4 Vdc Adc Adc GFS VGS(TH) VGS(Q) VDS(ON) -- -- -- -- 3 -- 3.5 0.25 -- 4.2 -- -- S Vdc Vdc Vdc Symbol Min Max Unit Table 5. RF Characteristics Parameter Typ Dynamic Characteristics Input Capacitance -- 112 -- pF CISS (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance -- 31.5 -- pF COSS (VDS = 28 Vdc, VGS = 0, f = 1 MHz) -- 1.5 -- pF CRSS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (in Agere Systems Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) 17 18 -- dB GL Linear Power Gain (VDS = 28 V, POUT = 10 W, IDQ = 550 mA) 60 72 -- W P1dB Output Power (VDS = 28 V, 1 dB compression, IDQ = 550 mA) -- 60 -- % Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 550 mA) IMD -- -32 -- dBc Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 60 WPEP, IDQ = 550 mA, typical efficiency = 43%) Input Return Loss RL -- -14 -- dB Ruggedness -- No degradation in output power. (VDS = 28 V, POUT = 60 W, IDQ = 550 mA, f = 880 MHz, VSWR = 10:1, all angles) 2 Agere Systems Inc. Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09060GUM VDD + C20 C21 C22 VGG + C15 C23 C24 C25 C26 FB1 R3 Z22 + C14 Z19 R2 C13 C12 C11 C10 C9 C8 Z20 C19 Z13 Z21 RF OUTPUT C18 R1 Z1 Z2 Z4 Z5 C3 Z6 Z7 Z8 Z9 Z10 Z18 RF INPUT Z17 Z16 C2 C1 C4 Z3 C5 C17 R4 Z14 Z11 Z12 2 Z15 1 DUT 3 C6 C16 C7 PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic Parts List: (R) Murata chip capacitor: C12, C24: 0.01 F GRM40X7R103K100AL. 0603 chip capacitor: C10, C22: 220 pF. (R) Sprague tantalum chip capacitor: C14, C15, C26: 22 F, 35 V. (R) Kreger ferrite bead: FB1 2743D19447. (R) Kemet chip capacitor: C13, C25 0.10 F C1206C104KRAC7800. (R) Vitramon chip capacitor: C11, C23: 2200 pF, VJ1206Y222KXA. (R) Taconic ORCER RF35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Microstrip line: Z1 0.243 in. x 0.066 in.; Z2 0.050 in. x 0.066 in.; Z3 0.331 in. x 0.050 in.; Z4 0.047 in. x 0.066 in.; Z5 0.067 in. x 0.066 in.; Z6 0.864 in. x 0.066 in.; Z7 0.561 in. x 0.150 in.; Z8 0.050 in. x 0.150 in.; Z9 0.220 in. x 0.150 in.; Z10 0.050 in. x 0.600 in.; Z11 0.334 in. x 0.600 in.; Z12 0.050 in. x 0.600 in.; Z13 1.024 in. x 0.050 in.; Z14 0.166 in. x 0.500 in.; Z15 0.050 in. x 0.500 in.; Z16 0.246 in. x 0.500 in.; Z17 0.050 in. x 0.500 in.; Z18 0.600 in. x 0.100 in.; Z19 0.050 x 0.100; Z20 0.468 in. x 0.066 in.; Z21 0.744 in. x 0.066 in.; Z22 2.048 in. x 0.050 in. ATC(R) chip capacitor: C5: 4.7 pF 100B4R7BW; C4, C18 3.9 pF 100B3R9BW; C6, C7: 12 pF 100B120JW; C16, C17: 9.1 pF 100B9R1BW; C9, C21: 10 pF 100B100JW; C2: 47 pF 100A470JW; C3, C8, C19, C20: 47 pF 100B470JW; C1: 8.2 pF 100A8R2BW. 1206 size, 0.25 W, fixed film, chip resistors: R1 50 , RM73B2B500J; R2 47 k RM73B2B473J; R3 1 k RM73B2B103J; R4 10 RK73H2A10R0F. B. Component Layout Figure 2. AGR09060GUM Test Circuit Agere Systems Inc. 3 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet July 2004 U CT IN D 90 0.6 10 0.1 0.4 20 0.2 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 50 50 0 1. IV CT 0 1.8 5 0.1 0.0 -70 40 -1 43 8 2 0.4 9 0.4 0.0 1 0.4 0.39 0.38 F 0.37 0.12 -110 0 -65 .5 2. 0.11 -100 -90 0.13 0.6 1.6 0.36 1.0 1.2 0.35 0.9 0.14 -80 -4 0 0.15 0.8 1.4 0.7 -70 0 -5 6 -4 4 0. 07 -1 30 0. 0 -12 5 0.1 0.3 35 -5 3 -60 -60 7 0.1 0.3 CA P AC I TI V (-j 06 Z X/ 0.2 -30 32 CE CO M T 5 0.0 ,O o) R -75 IN DU 0. ER EA CT AN EN 0. 18 0. 0 -5 -25 PO N 0. 0.4 ) / Yo (-jB CE AN PT CE US ES 0.6 0 31 0. 19 0. 44 -20 3. -80 0.8 6 0 4.0 4 0.0 0 -15 1. 0.3 5 0.4 0.2 8 0.2 -4 0 4 0. 0.2 9 1 -30 0.3 8 0. f1 -15 ZS 0.2 0.4 0.6 0.2 2 0.2 0.4 f1 5.0 -85 f3 -10 0.48 0.1 0.2 ZL -20 D OW A R 7 HST 0.4 N GT -170 EL E AV W < -90 -160 f3 10 L OA D < RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 20 0.49 0. 8 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 6 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 865 (f1) 880 (f2) 895 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 0.750 - j1.111 1.88 - j0.846 0.731 - j1.041 1.86 - j0.683 0.678 - j0.977 1.84 - j0.533 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 4 Agere Systems Inc. Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) -15 -20 -25 ACPR (dBc)Z -30 ACP+ ACP- FREQUENCY = 880 MHz -35 -40 -45 -50 -55 ACP1+ ACP- -60 -65 -70 -75 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 550 mA, TC = 30 C. IS-95 CDMA pilot, paging, sync, traffic codes 8 through 13. Offset 1 = 750 kHz, 30 kHz BW, offset 2 = 1.98 MHz, 30 kHz BW. 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 860 POUT = 14 W POWER GAIN POUT = 73 W RETURN LOSS 865 870 875 880 885 890 895 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 900 INPUT RETURN LOSS (dB)Z POWER GAIN (dB)Z Figure 4. ACPR vs. POUT FREQUENCY (MHz)Z Test Conditions: VDD = 28 Vdc, IDQ = 550 mA, TC = 30 C. Waveform = CW. Figure 5. Power Gain and Return Loss vs. Frequency Agere Systems Inc. 5 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet July 2004 Typical Performance Characteristics (continued) 20 18 865 MHz 880 MHz 895 MHz POWER GAIN (dB)Z 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 550 mA, TC = 30 C. Waveform = CW. Figure 6. Power Gain vs. Power Out 100 80 POUT (W)Z 70 110 865 MHz 880 MHz 895 MHz 100 90 60 50 40 895 MHz 880 MHz 865 MHz 30 20 10 80 70 60 50 40 DRAIN EFFICIENCY (%)Z 90 120 POUT 30 0 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 PIN (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 550 mA, TC = 30 C. Waveform = CW. Figure 7. Power Out and Drain Efficiency vs. Input Power 6 Agere Systems Inc. Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20.0 19.5 IDQ = 830 mA IDQ = 690 mA POWER GAIN (dB)Z 19.0 18.5 18.0 17.5 IDQ = 550 mA 17.0 IDQ = 410 mA 16.5 IDQ = 280 mA 16.0 15.5 15.0 0 5 10 15 20 25 30 35 POUT (W)Z Test Conditions: VDD = 28 Vdc, frequency = 880 MHz, TC = 30 C. Waveform = CW. Figure 8. Power Gain vs. Power Out -15 IM3IM3+ -20 -25 IMD (dBc)Z -30 -35 IM5IM5+ -40 IM7IM7+ -45 -50 -55 -60 -65 -70 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 OUTPUT POWER (WPEP)Z Test Conditions: VDD = 28 Vdc, IDQ = 550 mA, F1 = 880 MHz, F2 = 880.1 MHz, TC = 30 C. Figure 9. IMD vs. Input Power Agere Systems Inc. 7 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet July 2004 AGR09060GUM Package Dimensions Controlling dimensions are in millimeters. 0.65 (0.03) 1.1 (0.043) 2 PLACES 0.315 (0.013) 0.315 (0.013) 1.00 (0.039) 1. DRAIN 16.00 11.00 / 11.30 MAX (0.630) (0.433 / 0.448 MAX) 1.27 (0.0495) AGERE AGR09060GUM YYWWL XXXXX ZZZZZZZZ 3. SOURCE 2.95 REF 6.00 0.20 (0.115) (0.234 0.0078) 2.50 (0.098) 2. GATE 0.61 x 0.61 MAX x 45 (0.025 x 0.025) 2.90 (0.114) 2 PLACES 11.00 2.0 (0.434 0.078) 11.35 (0.448) 2.24 (0.088) TOP VIEW 15.90 / 16.20 MAX (0.626 / 0.6378 MAX) BOTTOM VIEW 2.95 (0.115) 14 1 0.254 (0.099) 3.35 REF (0.131) 0.90 (0.036) 3.15 0.15 (0.123 0.006) 1.60 (0.063) 0.015 (0.0006) SIDE VIEW END VIEW millimeters Note: Dimensions are shown in ------------------------- . ( inches ) Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last three letters of the part number denote wafer technology, flange type, and packaging technology. YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines). XXXXX = five-digit wafer lot number. ZZZZZZZZ = Assembly lot number. 8 Agere Systems Inc. Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Murata is a registered trademark of Murata Electronics North America, Inc. Kreger is a registered trademark of Kreger Components, Inc. Vitramon is a registered trademark of Vitramon Incorporated. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2004 Agere Systems Inc. All Rights Reserved July 2004 DS04-219RFPP (Replaces PB04-073RFPP)