1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C SMD package.
1.2 Features
■Small hermetically sealed glass SMD package
■High switching speed: ≤ 4 ns
■Continuous reverse voltage: ≤ 75 V
■Repetitive peak reverse voltage: ≤ 100 V
■Repetitive peak forward current: ≤ 450 mA
1.3 Applications
■High-speed switching
■Inverse-polarity protection
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
BAS32L
High-speed switching diode
Rev. 04 — 22 March 2005 Product data sheet
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current [1] - - 200 mA
IFRM repetitive peak forward
current - - 450 mA
VRreverse voltage - - 75 V
VFforward voltage IF = 100 mA - - 1000 mV
trr reverse recovery time [2] --4ns
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 2 of 11
Philips Semiconductors BAS32L
High-speed switching diode
2. Pinning information
[1] The marking band indicates the cathode.
3. Ordering information
4. Marking
[1] black: made in Philippines
brown: made in China
5. Limiting values
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode ka
sym006
Table 3: Ordering information
Type number Package
Name Description Version
BAS32L - hermetically sealed glass surface mounted package;
2 connectors SOD80C
Table 4: Marking codes
Type number Marking code[1]
BAS32L Marking band
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage - 100 V
VRreverse voltage - 75 V
IFforward current [1] - 200 mA
IFRM repetitive peak forward
current - 450 mA
IFSM non-repetitive peak forward
current square wave [2]
tp = 1 µs-4A
tp = 1 ms - 1 A
tp = 1 s - 0.5 A
Ptot total power dissipation Tamb = 25 °C[1] - 500 mW
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 3 of 11
Philips Semiconductors BAS32L
High-speed switching diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
[2] When switched from IF = 50 mA; tr = 20 ns
Tjjunction temperature - 200 °C
Tamb ambient temperature −65 +200 °C
Tstg storage temperature −65 +200 °C
Table 5: Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 350 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 300 K/W
Table 7: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF = 5 mA 620 - 750 mV
IF = 100 mA - - 1000 mV
IF= 100 mA; Tj= 100 °C - - 930 mV
IRreverse current VR = 20 V - - 25 nA
VR = 75 V - - 5 µA
VR = 20 V; Tj = 150 °C--50µA
VR = 75 V; Tj = 150 °C - - 100 µA
Cddiode
capacitance VR = 0 V; f = 1 MHz - - 2 pF
trr reverse recovery
time [1] --4ns
VFR forward recovery
voltage [2] - - 2.5 V
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 4 of 11
Philips Semiconductors BAS32L
High-speed switching diode
Mounted on an FR4 PCB; standard footprint (1) Tj = 175 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 1. Maximum permissible forward current as a
function of ambient temperature Fig 2. Forward current as a function of forward
voltage
Based on square wave currents
Tj = 25 °C prior to surge (1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 20 V; typical values
Fig 3. Maximum permissible non-repetitive peak
forward current as a function of pulse duration Fig 4. Reverse current as a function of junction
temperature
0 100 200
300
200
0
100
mbg451
Tamb (°C)
IF
(mA)
012
600
0
200
400
mbg464
VF (V)
IF
(mA)
(1) (2) (3)
mbg704
10
1
102
IFSM
(A)
10−1
tp (µs)
110
4
103
10 1020 100 Tj (oC) 200
103
102
10−1
10−2
10 (1) (2)
1
IR
(mA)
mgd006
(3)
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 5 of 11
Philips Semiconductors BAS32L
High-speed switching diode
Tj = 25 °C; f = 1 MHz
Fig 5. Diode capacitance as a function of reverse voltage; typical values
01020
1.2
1.0
0.6
0.4
0.8
mgd004
VR (V)
Cd
(pF)
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 6 of 11
Philips Semiconductors BAS32L
High-speed switching diode
8. Test information
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ≤ 0.05
Oscilloscope: Rise time tr = 0.35 ns
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp≥ 100 ns; duty factor δ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
trt
tp
10 %
90 %
I
input signal
RS = 50 Ω
I
Ri = 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 7 of 11
Philips Semiconductors BAS32L
High-speed switching diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 16.
Fig 8. Package outline SOD80C
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
Note
1. The marking band indicates the cathode.
SOD80C 100H01 97-06-20
05-01-26
Hermetically sealed glass surface mounted package; 2 connectors SOD80C
UNIT D
mm 1.60
1.45 3.7
3.3 0.3
HL
DIMENSIONS (mm are the original dimensions)
H
D
LL
(1)
0 1 2 mm
scale
ka
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
2500 10000
BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 8 of 11
Philips Semiconductors BAS32L
High-speed switching diode
11. Soldering
Dimensions in mm
Fig 9. Reflow soldering footprint SOD80C
Dimensions in mm
Fig 10. Wave soldering footprint SOD80C
MSA435
2.30
4.30
4.55
1.601.702.25
0.90
(2x)
solder lands
solder resist
occupied area
solder paste
MSA461
2.70
4.90
6.30
1.702.90
solder lands
solder resist
occupied area
1.90
tracks
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 9 of 11
Philips Semiconductors BAS32L
High-speed switching diode
12. Revision history
Table 9: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BAS32L_4 20050322 Product data sheet - 9397 750 14605 BAS32L_3
Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•Section 4 “Marking” added
•Table 6 “Thermal characteristics” Rth(j-tp) thermal resistance from junction to tie-point redefined to
Rth(j-sp) thermal resistance from junction to solder point
•Section 10 “Packing information” added
•Section 11 “Soldering” added
BAS32L_3 20020123 Product specification - 9397 750 09264 BAS32L_2
BAS32L_2 19960910 Product specification - 117021 BAS32L_1
BAS32L_1 19960423 Product specification - 113051 -
Philips Semiconductors BAS32L
High-speed switching diode
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 10 of 11
13. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains datafrom the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 22 March 2005
Document number: 9397 750 14605
Published in The Netherlands
Philips Semiconductors BAS32L
High-speed switching diode
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10
14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
16 Contact information . . . . . . . . . . . . . . . . . . . . 10
