APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V (R) T-MAXTM Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching TO-264 * Avalanche Energy Rated D FREDFET * Popular T-MAXTM or TO-264 Package * Lower Leakage G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT12060B2VFR_LVFR UNIT 1200 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 625 Watts Linear Derating Factor 5.00 W/C PD TJ,TSTG 80 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 20 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID= 10A) TYP MAX UNIT Volts 0.600 Ohms Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 4-2004 Characteristic / Test Conditions 050-5845 Rev A Symbol DYNAMIC CHARACTERISTICS APT12060B2VFR _ LVFR TYP MAX VGS = 0V 7545 9500 Output Capacitance VDS = 25V 650 980 Reverse Transfer Capacitance f = 1 MHz 350 490 VGS = 10V 431 650 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 34 210 41 320 VGS = 15V 13 26 Characteristic Symbol Ciss Test Conditions Input Capacitance Coss Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd 3 Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf MIN VDD = 0.5 VDSS 12 24 ID = ID [Cont.] @ 25C 63 95 RG = 0.6 12 25 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 20 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 80 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 18 V/ns dv/ dt Peak Diode Recovery dv/ dt 5 t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 320 Tj = 125C 650 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 3 Tj = 125C 9 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 15 Tj = 125C 25 Amps ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.20 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 15mH, R j G = 25, Peak IL = 20A UNIT C/W 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 0.05 D=0.5 0.2 0.1 0.01 0.05 Note: 0.005 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5845 Rev A 4-2004 0.2 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Graph Deleted APT12060B2VFR_LVFR 30 5V VGS =15 &10V 25 20 4.5V 15 10 4V 5 0 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 40 TJ = +125C 30 TJ = +25C 20 TJ = -55C 10 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 14 12 10 8 6 4 2 25 GS 1.10 GS 1.05 VGS=20V 1.0 0.95 0.9 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 = 10V 2.0 1.5 1.0 0.5 0.0 -50 VGS=10V D V 2.5 D 1.15 1.2 I = 0.5 I [Cont.] D NORMALIZED TO = 10V @ 0.5 I [Cont.] -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0 V 1.2 18 0 1.2 1.1 1.0 0.9 0.8 4-2004 50 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5845 Rev A ID, DRAIN CURRENT (AMPERES) 60 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 50 100S 10 1mS 5 D VDS=100V 8 1,000 Coss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 5,000 100 I = I [Cont.] D Ciss Crss 1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 12 10,000 10mS TC =+25C TJ =+150C SINGLE PULSE 1 VDS=250V VDS=400V 6 4 2 0 APT12060B2VFR_LVFR 40,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 80 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 200 100 50 TJ =+150C TJ =+25C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-5845 Rev A 4-2004 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source