MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT12060B2VFR
APT12060LVFR
1200V 20A 0.600ΩΩ
ΩΩ
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • Avalanche Energy Rated
• Lower Leakage • Popular T-MAX™ or TO-264
Package
POWER MOS V®
T-MAX™
TO-264
050-5845 Rev A 4-2004
FREDFET
G
D
S
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID= 10A)
Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
1200
0.600
250
1000
±100
24
APT12060B2VFR_LVFR
1200
20
80
±30
±40
625
5.00
-55 to 150
300
20
50
3000
DYNAMIC CHARACTERISTICS APT12060B2VFR _ LVFR
050-5845 Rev A 4-2004
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471
temperature. 4Starting Tj = +25°C, L = 15mH, RG = 25Ω, Peak IL = 20A
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5IS ≤ ID [Cont.], di/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
UNIT
pF
nC
ns
MIN TYP MAX
20
80
1.3
18
Tj = 25°C 320
Tj = 125°C 650
Tj = 25°C 3
Tj = 125°C 9
Tj = 25°C 15
Tj = 125°C 25
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN TYP MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX
7545 9500
650 980
350 490
431 650
34 41
210 320
13 26
12 24
63 95
12 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
050-5845 Rev A 4-2004
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
Graph Deleted
4V
4.5V
5V
VGS =15 &10V
0 5 10 15 20 25
0 1 2 3 4 5 6 0 5 10152025303540
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
25
20
15
10
5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
1.2
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGS=10V
VGS=20V
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
ID = 0.5 ID [Cont.]
VGS = 10V
APT12060B2VFR_LVFR
Typical Performance Curves
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline TO-264 (L) Package Outline
050-5845 Rev A 4-2004
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
10mS
1mS
100µS
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Ciss
Coss
1 5 10 50 100 500 1200 .01 .1 1 10 50
0 100 200 300 400 500 0.3 0.5 0.7 0.9 1.1 1.3 1.5
80
50
10
5
1
12
10
8
6
4
2
0
VDS=250V
VDS=100V
VDS=400V
ID = ID [Cont.]
40,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
TJ =+150°C
TJ =+25°C
APT12060B2VFR_LVFR
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
