MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 Functional Schematic Features >125 W CW Incident Power Handling @ 1 GHz <0.2 dB Insertion Loss @ 1 GHz >15 dB Isolation @ 1 GHz Lead-Free 3 mm 16-lead HQFN Package Halogen-Free "Green" Mold Compound RoHS* Compliant and 260C Reflow Compatible Description The MADP-011037 is a high power PIN diode assembled in a lead-free 3 mm 16-lead HQFN plastic package. This series device provides exceptional switch or attenuator performance from 50 MHz to 2 GHz. This compact device is ideally suitable for higher power switch and attenuator applications from HF through L band, where higher peak and CW power, lower loss, and higher linearity performance surface mount diode assemblies are required. Ordering Information1,2 GND RFOUT GND 16 14 15 N/C 13 12 GND GND 1 N/C 2 11 N/C N/C 3 10 N/C GND 4 9 GND 5 6 7 8 GND RFIN GND N/C Pin Configuration3 Pin No. Pin Name Description 1 GND Ground 2 N/C Connect to Ground 3 N/C Connect to Ground 4 GND Ground 5 GND Ground 6 RFIN Anode Part Number Package 7 GND Ground MADP-011037-13900T 3000 piece reel 8 N/C Connect to Ground MADP-011037-000SMB Sample Board 9 GND Ground 10 N/C Connect to Ground 11 N/C Connect to Ground 12 GND Ground 13 N/C Connect to Ground 14 GND Ground 15 RFOUT Cathode 16 GND 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 17 Paddle Ground 4 Ground 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF,DC and thermal ground. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 Electrical Specifications: Freq. = 1250 MHz, TA = 25C, Z0 = 50 (unless otherwise noted) Parameter Test Conditions Units Min. Typ. Max. Insertion Loss IF = 10 mA IF = 25 mA IF = 50 mA dB -- 0.17 0.13 0.11 -- 0.3 -- Input Return Loss IF = 10 mA IF = 25 mA IF = 50 mA dB -- 22 22 22 -- Isolation VR = 0 V VR = 20 V VR = 50 V dB -- 12 -- 14 14 14 -- CW Incident Power 1 GHz, CW @ + 50 mA dBm -- 52 -- Minority Carrier Lifetime +IF = 10 mA / IR = -6 mA (50% Control Voltage, 90% Output Voltage) s -- 1.0 CW Thermal Resistance (JC) (Infinite Heat Sink at Thermal Ground Plane) I High = 4 A, I low = 10 mA @ 10 kHz C/W -- 30 -- Power Dissipation (Infinite Heat Sink at Thermal Ground Plane) +IF = 50 mA @ 1 GHz W -- 5 -- Forward Voltage +50 mA DC V -- 0.9 -- Total Capacitance -50 V @ 1 GHz pF -- 0.30 -- Reverse Leakage Current -200 V nA -- |-20| -- Absolute Maximum Ratings5,6 2 Parameter Absolute Maximum CW Incident Power7 +50 mA, 1 GHz @ +85C +51 dBm DC Forward Voltage +250 mA 1.2 V DC Forward Current 250 mA DC Reverse Voltage |-400V| Junction Temperature8,9 +175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Incident Power measured with Source and Load VSWR < 1.2:1. 8. Operating at nominal conditions with TJ +175C will ensure MTTF > 1 x 106 hours. 9. Junction Temperature (TJ) = TA + (JC) * (PD) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 PCB Schematic PCB Layout DC Bias DC Bias C1 C4 FB1 FB2 RFIN RFOUT C2 C3 Parts List10 Handling Procedures Part Value Case Style C1, C4 62 pF 0402 Please observe the following precautions to avoid damage: C2, C3 100 pF 0402 Static Sensitivity FB1, FB211 470 @ 1 GHz 0402 10. DC voltage with recommended components should not exceed 100 V. 11. 470 resistance is included in FB1 and FB2 (recommend Murata part number BLM15GG471SN1). These devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 2 devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 Typical RF Small Signal Performance Curves Return Loss, 10 mA Forward Bias Insertion Loss, 10 mA Forward Bias 0.0 0 -0.1 -10 -0.3 -20 +25C -40C +85C -0.4 -0.5 0.0 0.5 +25C -40C +85C -30 1.0 1.5 2.0 2.5 3.0 -40 0.0 0.5 0.0 0 -0.1 -10 -0.3 -20 +25C -40C +85C 0.5 1.0 1.5 2.0 2.5 3.0 -40 0.0 0.5 4 1.0 1.5 2.0 2.5 3.0 2.5 3.0 Frequency (GHz) Return Loss, 50 mA Forward Bias 0.0 0 -0.1 -10 -0.3 -20 +25C -40C +85C +25C -40C +85C -30 -40 0.5 3.0 -30 Insertion Loss, 50 mA Forward Bias -0.5 0.0 2.5 +25C -40C +85C Frequency (GHz) -0.4 2.0 Return Loss, 25 mA Forward Bias Insertion Loss, 25 mA Forward Bias -0.5 0.0 1.5 Frequency (GHz) Frequency (GHz) -0.4 1.0 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 Typical RF Small Signal Performance Curves Isolation, 20 V Reverse Bias Isolation, 0 V Reverse Bias 0 0 +25C -40C +85C -5 -10 -10 -15 -15 -20 -20 -25 -25 -30 -30 0.0 0.5 +25C -40C +85C -5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Frequency (GHz) Isolation, 50 V Reverse Bias 0 +25C -40C +85C -5 -10 -15 -20 -25 -30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 3.0 MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 Typical High Power Performance Curves Output Power vs. Incident Power Junction Temperature 1 GHz, CW @ TA = +85C 50 200 45 180 +25C -40C +85C 40 160 35 140 30 120 25 100 20 20 25 30 35 40 45 50 80 Incident Power (dBm) 0 10 20 30 40 50 CW Incident Power (dBm) Lead-Free 3 mm 16-Lead HQFN All dimensions shown as in/mm. Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Lead finish is NiPdAuAg plate. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 60 MADP-011037-13900T High Power PIN Diode 50 MHz - 2 GHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. 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