MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE PM150CL1A120 FEATURE Inverter + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible L-series package. * 3 150A, 1200V Current-sense and temperature sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available from upper arm devices) * UL Recognized APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 135 122.1 11.7 26 40.5 W V 6.05 18 (13) 26 U 18.7 6-M5 Nuts (Screwing Depth) 13 6.05 1100.5 66.5 9 19- 5 0.5 1 30.15 11 4 Terminal code L A B E L 34.7 2-2.5 13 33.6 19 10 3-2 10 3-2 10 3-2 24.1 +1 -0.5 11 4-5.5 Mounting Holes 6-2 90.1 71.5 3.25 110 21.5 20 20 780.5 N P B 10.5 1. 2. 3. 4. 5. VUPC 6. UFO 7. UP 8. VUP1 9. VVPC 10. VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. WP VWP1 VNC VN1 NC 16. 17. 18. 19. UN VN WN Fo November2012 May 2009 1 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM NC Fo VNC WN VN1 WP VWP1 VWPC WFO UN VN 1.5k VP VVPC 1.5k Gnd In Gnd Fo Vcc Si Out OT Gnd In Gnd Fo Vcc Si Out NC OT Gnd In Gnd Fo Vcc Si Out OT N Gnd In Gnd UP VUPC VUP1 UFO 1.5k Fo Vcc Si Out VVP1 VFO OT Gnd In Gnd W V 1.5k Fo Vcc Si Out Gnd In OT Gnd Fo Vcc Si Out U OT P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 1200 150 300 833 -20 ~ +150 Unit V A A W C Ratings Unit 20 V 20 V 20 V 20 mA *: TC measurement point is just under the chip. CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO Fault Output Supply Voltage IFO Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals November2012 May 2009 2 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VCC(surge) Tstg Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Viso Isolation Voltage VCC(PROT) Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS Ratings Unit 800 V 1000 -40 ~ +125 V C 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Parameter Rth(j-c)Q Rth(j-c)F Thermal Resistance Rth(c-f) Contact Thermal Resistance Conditions Inverter, IGBT (per 1 element) Inverter, FWDi (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note.1) (Note.1) (Note.1) Min. - Limits Typ. - Max. 0.15 0.23 - - 0.023 Unit C/W Note.1: If you use this value, Rth(f-a) should be measured just under the chips. Top View Top View PM150CL1A120 PM150CL1A120 350G * "350G" is printed on the label ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=150A VCIN=0V, Pulsed FwDi Forward Voltage -IC=150A, VD=15V, VCIN= 15V Switching Time VD=15V, VCIN=0V 15V VCC=600V, IC=150A Tj=125C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) 3 Tj=25C Tj=125C (Fig. 2) (Fig. 3,4) Tj=25C Tj=125C Min. 0.3 - Limits Typ. 1.65 1.85 2.3 0.8 0.3 0.4 1.2 0.4 - Max. 2.15 2.35 3.3 2.0 0.8 1.0 2.8 1.2 1 10 Unit V V s mA November2012 November. 2012 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Condition VN1-VNC V*P1-V*PC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC -20 Tj 125C, VD = 15V (Fig. 3,6) Over Temperature Protection Detect Temperature of IGBT chip Supply Circuit Under-Voltage Protection -20 Tj 125C Fault Output Current VD = 15V, VCIN = 15V (Note-2) Minimum Fault Output Pulse Width VD = 15V (Note-2) toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level Min. -- -- 1.2 1.7 300 Limits Typ. 6 2 1.5 2.0 -- Max. 12 4 1.8 2.3 -- Unit mA V A -- 0.2 -- s 135 -- 11.5 -- -- -- -- 20 12.0 12.5 -- 10 -- -- 12.5 -- 0.01 15 C 1.0 1.8 -- V mA ms (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Condition Parameter Symbol -- Mounting torque -- Weight Mounting part Main terminal part screw : M5 screw : M5 -- Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 800 Max. 3.5 3.5 -- Unit N*m N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals Recommended value 800 Unit V 15.0 1.5 V (Fig. 7) 0.8 9.0 20 kHz 2.5 s V (Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND May 2009 November2012 4 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) IN Fo VCIN P, (U,V,W) Ic V IN Fo VCIN -Ic V (15V) (0V) U,V,W, (N) VD (all) U,V,W, (N) VD (all) Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P Fo VCIN (15V) trr Signal input (Upper Arm) CS Ic Irr Vcc Fo Signal input (Lower Arm) VCIN VCE U,V,W 90% 90% N VD (all) b) Upper Arm Switching Ic 10% 10% tc(on) P 10% 10% tc(off) Fo Signal input (Upper Arm) VCIN VCIN U,V,W CS VCIN (15V) Vcc td(on) tr td(off) tf Fo Signal input (Lower Arm) (ton = td(on) + tr) (toff = td(off) + tf) N Ic VD (all) Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform VCIN Short Circuit Current P, (U,V,W) A VCIN (15V) Constant Current IN Fo SC Trip Pulse VCE Ic VD (all) U,V,W, (N) Fo toff(SC) Fig. 5 ICES Test Fig. 6 SC Test Waveform IPM' input signal VCIN (Upper Arm) 0V 2V 1.5V 0V IPM' input signal VCIN (Lower Arm) 2V 1.5V 1.5V tdead 2V tdead t t tdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead time measurement point example November2012 May 2009 5 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE P 20k 10 VUP1 VD UFo IF 1.5k UP OT OUT Vcc Fo VUPC + - Si In U GND GND 0.1 VVP1 VFo VD VP Si V GND GND VWP1 VD Fo In VVPC WFo OT OUT Vcc 1.5k 1.5k WP OT OUT Vcc Fo Si In VWPC W GND GND 20k OT Vcc 10 OUT Si Fo IF UN In GND GND 0.1 20k M N OT Vcc 10 IF OUT Si Fo VN In GND GND 0.1 20k VD VN1 IF OUT Si Fo WN 0.1 OT Vcc 10 In GND GND VNC NC NC 5V 1k Fo 1.5k : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * * November2012 May 2009 6 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 140 13V 120 100 80 60 40 20 0.5 0 1.0 1.5 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Tj = 25C Tj = 125C 0.2 0 2.0 VD = 15V 1.8 0 50 100 150 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 2.4 2.2 2.0 1.8 1.6 1.4 IC = 150A Tj = 25C Tj = 125C 1.2 1.0 12 SWITCHING TIME ton, toff (s) 15V VD = 17V 160 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25C 13 14 15 16 17 18 103 VD = 15V 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 CONTROL POWER SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load 2 SWITCHING TIME tc(on), tc(off) (s) COLLECTOR CURRENT IC (A) 180 toff 100 7 5 4 3 ton 2 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 100 7 5 4 3 2 tc(off) tc(on) 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) November2012 May 2009 7 MITSUBISHI PM150CL1A120 10.0 Eoff 8.0 6.0 4.0 2.0 0 0 50 100 150 DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 100.0 VCC = 600V 0.9 VD = 15V 90.0 T j = 25C 0.8 80.0 Tj = 125C 0.7 Inductive load 70.0 0.6 0.5 50.0 0.4 40.0 0.3 30.0 0.2 20.0 trr 0.1 0 200 60.0 Irr 10.0 0 0 20 40 60 80 100 120 140 160 180 200 COLLECTOR REVERSE CURRENT -IC (A) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 15.0 VCC = 600V VD = 15V 12.5 Tj = 25C Tj = 125C 10.0 Inductive load ID VS. fc CHARACTERISTICS (TYPICAL) VD = 15V Tj = 25C Tj = 125C 120.0 N-side ID (mA) 100.0 7.5 5.0 80.0 60.0 40.0 2.5 0 UVt /UVr 140.0 P-side 20.0 0 50 100 150 0 200 0 5 10 15 20 25 COLLECTOR REVERSE CURRENT -IC (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 14 1.4 12 1.2 1.6 SC SWITCHING LOSS Err (mJ/pulse) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CURRENT lrr (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 20.0 VCC = 600V 18.0 VD = 15V Eon Tj = 25C 16.0 Tj = 125C 14.0 Inductive load 12.0 REVERSE RECOVERY TIME trr (s) SWITCHING LOSS Eon, Eoff (mJ/pulse) FLAT-BASE TYPE INSULATED PACKAGE 10 1.0 8 0.8 6 0.6 4 0.4 2 0.2 0 -50 0 50 100 0 -50 150 Tj (C) 0 50 100 150 Tj (C) November2012 May 2009 8 MITSUBISHI PM150CL1A120 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 100 7 5 3 2 10-1 7 5 3 2 10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.15C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 0.23C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec) May 2009 November2012 9