PM150CL1A120 - MITSUBISHI SEMICONDUCTOR

May 2009

1

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

PM150CL1A120

FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip sur-

face temperature of CSTBTTM is adopted.

c) Error output signal is possible from all each protection up-

per and lower arm of IPM.

d) Compatible L-series package.

•3φ 150A, 1200V Current-sense and temperature sense

IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-

circuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

• UL Recognized

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

10.5

6-M5 Nuts

110±0.5

78±0.5

+1

-0.5

135

122.1

6.05

11.7

26 26 40.5

18

11

71.5

66.5

6-2 3-2

10

19 13

LABEL

9 5 1

10 10

3.25

2-φ2.5

4-φ5.5

Mounting Holes 19- 0.5

3-2 3-2

33.6

34.7

24.1

20 20 21.5

18.7

P

WV U

NB

30.15 11

(13)

(Screwing Depth)

13

110

90.1

6.05

4

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

Te rminal code

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

2

V

N

U

N

W

P

V

WP1

WF

O

V

WPC

V

P

V

VP1

VF

O

V

VPC

U

P

V

UP1

UF

O

V

UPC

NC

NC N W V U P

Fo

1.5k

1.5k 1.5k 1.5k

V

NC

V

N1

W

N

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1200

150

300

833

–20 ~ +150

Ratings

VCES

±IC

±ICP

PC

Tj

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

Junction Temperature

VD = 15V, VCIN = 15V

TC = 25°C(Note-1)

TC = 25°C

TC = 25°C(Note-1)

V

A

W

°C

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Unit

INTERNAL FUNCTIONS BLOCK DIAGRAM

*: TC measurement point is just under the chip.

VFO

IFO

CONTROL PART

V

mA

20

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Symbol Parameter Condition Ratings Unit

Applied between : VUP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

FO-VNC

Sink current at UFO, VFO, WFO, FO terminals

20

VD

VCIN

V

November2012

3

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

November. 2012

TOTAL SYSTEM

Symbol Parameter Conditions Ratings Unit

VCC(PROT) Supply Voltage Protected by

SC

VD =13.5V ~ 16.5V

Inverter Part, Tj =+125°C Start 800 V

VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 1000 V

Tstg Storage Temperature -40 ~ +125 °C

Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base plate,

AC 1min, RMS 2500 V

*: TC measurement point is just under the chip.

THERMAL RESISTANCE

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

Rth(j-c)Q Inverter, IGBT (per 1 element) (Note.1) - - 0.15

Rth(j-c)F

Thermal Resistance

Inverter, FWDi (per 1 element) (Note.1) - - 0.23

Rth(c-f) Contact Thermal Resistance

Case to fin, (per 1 module)

Thermal grease applied (Note.1) - -

0.023

°C/W

Note.1: If you use this value, Rth(f-a) should be measured just under the chips.

PM150CL1A120 PM150CL1A120 350G

* ”350G” is printed on the label

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Limits

Symbol Parameter Conditions

Min. Typ. Max. Unit

Tj=25°C - 1.65 2.15

VCE(sat) Collector-Emitter Saturation

Voltage

VD=15V, IC=150A

VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 1.85 2.35

V

VEC FwDi Forward Voltage -IC=150A, VD=15V, VCIN= 15V (Fig. 2) - 2.3 3.3

V

ton 0.3 0.8 2.0

trr - 0.3 0.8

tc(on) - 0.4 1.0

toff - 1.2 2.8

tc(off)

Switching Time

VD=15V, VCIN=0V←→15V

VCC=600V, IC=150A

Tj=125°C

Inductive Load (Fig. 3,4)

- 0.4 1.2

s

Tj=25°C - - 1

ICES Collector-Emitter Cut-off

Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10

mA

Top View Top View

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

4

–20 ≤ Tj ≤ 125°C

VD = 15V, VCIN = 15V (Note-2)

VD = 15V (Note-2)

Vth(ON)

Vth(OFF)

SC

toff(SC)

OT

OT(hys)

UV

UVr

IFO(H)

IFO(L)

tFO

Trip level

Hysteresis

Trip level

Reset level

–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)

VD = 15V (Fig. 3,6)

VD = 15V, VCIN = 15V

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

ID

°C

V

mA

ms

12

4

1.8

2.3

—

12.5

—

0.01

15

—

mA

Circuit Current

Input ON Threshold Voltage

Input OFF Threshold Voltage

Short Circuit Trip Level

Short Circuit Current Delay

Time

Over Temperature Protection

Supply Circuit Under-Voltage

Protection

Fault Output Current

Minimum Fault Output Pulse

Width

CONTROL PART

—

1.2

1.7

300

—

135

—

11.5

—

1.0

Parameter

Symbol Condition Max.

Min. Typ. Unit

Limits

6

2

1.5

2.0

—

0.2

—

20

12.0

12.5

—

10

1.8

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to

protect it.

V

µs

VN1-VNC

V*P1-V*PC

A

3.5

—

Mounting part screw : M5

Main terminal part screw : M5

—

Symbol Parameter

Mounting torque

Weight

Condition Unit

N • m

g

Limits

Min. Typ. Max.

2.5

—

3.0

800

MECHANICAL RATINGS AND CHARACTERISTICS

RECOMMENDED CONDITIONS FOR USE

Recommended value Unit

Condition

Symbol Parameter

V

Applied across P-N terminals

Applied between : VUP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC (Note-3)

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

Using Application Circuit of Fig. 8

Supply Voltage

Control Supply Voltage

Input ON Voltage

Input OFF Voltage

PWM Input Frequency

≤ 800

15.0 ±1.5

≤ 0.8

≥ 9.0

≤ 20

VCC

VCIN(ON)

VCIN(OFF)

fPWM

VDV

V

kHz

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

tdead Arm Shoot-through Blocking

Time For IPM’s each input signals (Fig. 7) ≥ 2.5 µs

≤

±

5V/µs

≤

2V

GND

15V

Detect Temperature of IGBT chip

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

5

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-

sponding supply voltage and each input signal should be kept off state.

After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-

lowed to rise above VCES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

P, (U,V,W)

U,V,W, (N) U,V,W, (N)

VD (all)

IN

Fo

IN

Fo

VD (all)

VCIN

(0V)

Ic

V V

P, (U,V,W)

VCIN

(15V)

–Ic

Fig. 7 Dead time measurement point example

Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

0V 1.5V 1.5V

1.5V

2V

0V

t

tdeadtdeadtdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

IPM’ input signal VCIN

(Upper Arm)

IPM’ input signal VCIN

(Lower Arm)

10%

90%

trr

Irr

trtd(on)

tc(on) tc(off)

td(off)

VCIN

Ic

VCE

10%

10% 10%

90%

tf

(ton = td(on) + tr) (toff = td(off) + tf)

Fo

P

N

CS

U,V,W

Vcc

Ic

VD (all)

P

U,V,W

VCIN

(15V)

VCIN

(15V)

Fo

Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform

a) Lower Arm Switching

Signal input

(Upper Arm)

Signal input

(Lower Arm)

Signal input

(Upper Arm)

Signal input

(Lower Arm)

b) Upper Arm Switching

VCIN

Fig. 5 ICES Test

Fig. 6 SC Test Waveform

SC Trip

Short Circuit Current

toff(SC)

VD (all) U,V,W, (N)

P, (U,V,W) A

Pulse VCE

VCIN

(15V) Ic

Fo

IN

Fo

Constant Current

Fo

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

6

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

stray capacity between the input and output wirings of opto-coupler.

•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.

•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.

•Slow switching opto-coupler: CTR > 100%

•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

power supply.

•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

terminal.

•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line

and improve noise immunity of the system.

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

OUT

Si

OT

GNDGND

In

Vcc

U

V

W

N

NC

P

M

→

IF

+

–

OUT

Si

GNDGND

In

Vcc

OUT

Si

GNDGND

In

Vcc

Fo

OUT

Si

GNDGND

In

Fo

Vcc

OUT

Si

GNDGND

In

Fo

Vcc

OUT

Si

GND

In

Fo

Vcc

VWP1

WFo

WP

VWPC

UN

VN

VN1

WN

VNC

1.5k

Fo

VVP1

VP

VVPC

≥0.1µ

1k

≥0.1µ

20k

≥10µ

20k ≥10µ

≥0.1µ

VUP1

UP

VUPC

→

IF

5V

→

V

D

VD

1.5k

Fo

VFo

1.5k

Fo

UFo

1.5k

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

7

PERFORMANCE CURVES

10

0

10

1

23 57

10

2

23 57

10

3

23 57

00

20

40

60

80

100

120

140

160

180

0.5 1.0 1.5 2.0

00.5 1.0 1.5 2.0 2.5

00

0.4

0.8

1.2

1.6

2.0

0.2

0.6

1.0

1.4

1.8

50 100 150 200

10

–1

10

0

2

3

4

5

7

10

1

2

3

4

5

7

10

–1

10

0

2

3

4

5

7

10

1

2

3

4

5

7

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

12 13 14 15 16 17 18

Tj = 25°C

13V

VD = 17V VD = 15V

Tj = 25°C

Tj = 125°C

VD = 15V

Tj = 25°C

Tj = 125°C

IC = 150A

Tj = 25°C

Tj = 125°C

ton

toff

VCC = 600V

VD = 15V

Tj = 25°C

Tj = 125°C

Inductive load

VCC = 600V

VD = 15V

Tj = 25°C

Tj = 125°C

Inductive load

tc(on)

tc(off)

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. VD) CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat)

(V)

CONTROL POWER SUPPLY VOLTAGE V

D

(V)

COLLECTOR RECOVERY CURRENT –I

C

(A)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

DIODE FORWARD CHARACTERISTICS

(TYPICAL)

SWITCHING TIME ton, toff (µs)

SWITCHING TIME (ton, toff) CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

C

(A)

SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS

(TYPICAL)

SWITCHING TIME tc(on), tc(off) (µs)

COLLECTOR CURRENT I

C

(A)

15V

10

1

10

0

10

2

5

7

10

3

2

3

5

7

2

3

5

7

2

3

10

0

10

1

23 57

10

2

23 57

10

3

23 57

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

8

0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

050 100 150 200 0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

20.0

40.0

60.0

80.0

100.0

10.0

30.0

50.0

70.0

90.0

040 80 120 16020 60 100 140 180200

0

2.5

5.0

7.5

10.0

12.5

15.0

050 100 150 200

E

on

E

off

V

CC

= 600V

V

D

= 15V

T

j

= 25°C

T

j

= 125°C

Inductive load

V

CC

= 600V

V

D

= 15V

T

j

= 25°C

T

j

= 125°C

Inductive load

t

rr

I

rr

V

CC

= 600V

V

D

= 15V

T

j

= 25°C

T

j

= 125°C

Inductive load

COLLECTOR CURRENT I

C

(A)

SWITCHING LOSS CHARACTERISTICS

(TYPICAL)

SWITCHING LOSS E

on

, E

off

(mJ/pulse)

COLLECTOR REVERSE CURRENT –I

C

(A)

SWITCHING RECOVERY LOSS CHARACTERISTICS

(TYPICAL)

SWITCHING LOSS E

rr

(mJ/pulse)

DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

COLLECTOR REVERSE CURRENT –I

C

(A)

REVERSE RECOVERY TIME t

rr

(µs)

REVERSE RECOVERY CURRENT l

rr

(A)

00

20.0

40.0

60.0

80.0

100.0

120.0

140.0

5 10 15 20 25

N-side

P-side

V

D

= 15V

T

j

= 25°C

T

j

= 125°C

f

c

(kHz)

I

D

VS. f

c

CHARACTERISTICS

(TYPICAL)

I

D

(mA)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0 V

D

= 15V

–50 0 50 100 150

SC TRIP LEVEL VS. T

j

CHARACTERISTICS

(TYPICAL)

T

j

(°C)

SC

0

2

4

6

8

10

12

14

16

18

20

–50 0 50 100 150

UV

t

UVr

T

j

(°C)

UV TRIP LEVEL VS. T

j

CHARACTERISTICS

(TYPICAL)

UV

t

/UV

r

November2012

MITSUBISHI <INTELLIGENT POWER MODULES>

PM150CL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

9

23 57

10

–3

23 5723 57

10

–4

23 57

10

1

23 57

10

0

10

–1

23 57

10

–2

10

–5

10

–2

10

–3

10

–1

5

7

10

0

2

3

5

7

2

3

5

7

2

3

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(TYPICAL)

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th(j-c)

t(sec)

Single Pulse

IGBT part;

Per unit base

= R

th(j-c)

Q = 0.15°C/W

FWDi part;

Per unit base

= R

th(j-c)

F = 0.23°C/W

November2012