1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
[1] Black video signal, sync expansion: input sync = 33 %; output sync ≥27 %.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
1.2 Features
n2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
uPeak envelope power load power = 300 W
uPower gain = 21 dB
uDrain efficiency = 46 %
uThird order intermodulation distortion = −35 dBc
nDVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
uAverage output power = 75 W
uPower gain = 21 dB
uDrain efficiency = 32 %
uThird order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)
BLF878
UHF power LDMOS transistor
Rev. 02 — 15 June 2009 Product data sheet
Table 1. Typical performance
RF performance at V
DS
= 42 V in a common-source 860 MHz narrowband test circuit.
Mode of operation f PLPL(PEP) PL(AV) GpηDIMD3
(MHz) (W) (W) (W) (dB) (%) (dBc)
CW, class AB 860 300 - - 21 60 -
2-Tone, class AB f1 = 860; f2= 860.1 - 300 - 21 46 −35
PAL BG 860 (ch69) 300 (peak sync.) [1] - - 21 45 -
DVB-T (8k OFDM) 858 - - 75 21 32 −32 [2]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 2 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
nIntegrated ESD protection
nAdvanced flange material for optimum thermal behavior and reliability
nExcellent ruggedness
nHigh power gain
nHigh efficiency
nDesigned for broadband operation (470 MHz to 860 MHz)
nExcellent reliability
nInternal input and output matching for high gain and optimum broadband operation
nEasy power control
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nCommunication transmitter applications in the UHF band
nIndustrial applications in the UHF band
2. Pinning information
[1] Connected to flange.
3. Ordering information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
2 drain2
3 gate1
4 gate2
5 source [1]
5
2
4
1
34
35
1
2
sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF878 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 3 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
4. Limiting values
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
[2] Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 89 V
VGS gate-source voltage −0.5 +11 V
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80°C;
PL(AV) = 150 W [1] 0.23 K/W
Rth(c-h) thermal resistance from case to heatsink [2] 0.15 K/W
Table 6. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.25 mA [1] 89 - 105.5 V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 225 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =42V - - 1.4 µA
IDSX drain cut-off current VGS =V
GSth + 3.75 V;
VDS =10V 35 39 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
gfs forward transconductance VDS =10V; I
D= 11.2 A [1] - 15.5 - S
RDS(on) drain-source on-state resistance VGS =V
GSth + 3.75 V;
ID= 7.6 A [1] - 110 - mΩ
Ciss input capacitance VGS = 0 V; VDS =40V;
f=1MHz [2] - 190 - pF
Coss output capacitance VGS = 0 V; VDS =40V;
f=1MHz [2] -60- pF
Crss reverse transfer capacitance VGS = 0 V; VDS =40V;
f=1MHz [2] -2- pF
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 4 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7. Application information
[1] IDq = 1.4 A for total device.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
VDS (V)
0604020
001aai075
150
250
350
Coss
(pF)
50
Table 7. RF performance in a common-source narrowband 860 MHz test circuit
T
case
=25
°
C unless otherwise specified.
Mode of operation f VDS IDq PL(PEP) PL(AV) GpηDIMD3
(MHz) (V) (A) (W) (W) (dB) (%) (dBc)
2-Tone, class AB f1= 860; f2= 860.1 40 1.4[1] 300 - > 18 > 42 < −31
DVB-T (8k OFDM) 858 40 1.4[1] - 75 > 18 > 29 < −29 [2]
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 5 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.1 Narrowband RF figures
7.1.1 CW
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 2. CW power gain and drain efficiency as a function of load power; typical values
PL (W)
0 400200 300100
001aai076
20
18
22
24
Gp
(dB)
16
40
20
60
80
ηD
(%)
0
Gp
ηD
(2)
(1)
(2)
(1)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 6 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.1.2 2-Tone
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 3. 2-Tone power gain and drain efficiency as
functions of average load power; typical
values
Fig 4. 2-Tone third order intermodulation distortion
as a function of average load power; typical
values
PL(AV) (W)
0 400300100 200
001aai077
18
20
22
Gp
(dB)
16
20
40
60
ηD
(%)
0
Gp
ηD
(1)
(2)
(2)
(1)
PL(AV) (W)
0 400300100 200
001aai078
−30
−40
−20
−10
IMD3
(dBc)
−50
(1)
(2)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 7 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.1.3 DVB-T
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 5. DVB-T power gain and drain efficiency as
functions of average load power; typical
values
Fig 6. DVB-T third order intermodulation distortion
as a function of average load power; typical
values
PL(AV) (W)
0 250200100 15050
001aai079
19
21
23
Gp
(dB)
17
20
40
60
ηD
(%)
0
Gp
ηD
(1)
(2)
(2)
(1)
PL(AV) (W)
0 250200100 15050
001aai080
−35
−25
−15
IMD3
(dBc)
−45
(1)
(2)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 8 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 2-Tone
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 7. 2-Tone power gain and drain efficiency as a
function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion
as a function of frequency; typical values
f (MHz)
400 900800600 700500
001aai081
14
18
22
Gp
(dB)
10
40
60
80
ηD
(%)
20
(1)
(2)
(2)
(1)
Gp
ηD
f (MHz)
400 900800600 700500
001aai082
−40
−20
0
IMD3
(dBc)
−60
(1)
(2)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 9 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.2.2 DVB-T
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 9. DVB-T power gain and drain efficiency as
functions of frequency; typical values Fig 10. DVB-T third order intermodulation distortion
as a function of frequency; typical values
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8.
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
f (MHz)
400 900800600 700500
001aai083
14
18
22
Gp
(dB)
10
20
40
60
ηD
(%)
0
(1)
(2)
(2)
(1)
Gp
ηD
f (MHz)
400 900800600 700500
001aai084
−40
−20
0
IMD3
(dBc)
−60
(1)
(2)
f (MHz)
400 900800600 700500
001aai085
7
8
6
9
10
PAR
(dB)
5
(2)
(1)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 10 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.3 Ruggedness in class-AB operation
The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated
power.
7.4 Impedance information
Fig 12. Definition of transistor impedance
Table 8. Typical push-pull impedance
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 42 V and P
L(PEP)
= 300 W.
f ZiZL
MHz Ω Ω
300 0.933 − j1.376 6.431 − j4.296
325 0.959 − j0.986 6.889 − j3.911
350 0.988 − j0.628 7.237 − j3.476
375 1.020 − j0.295 7.475 − j3.017
400 1.057 + j0.017 7.610 − j2.559
425 1.097 + j0.314 7.652 − j2.120
450 1.143 + j0.598 7.614 − j1.713
475 1.194 + j0.871 7.512 − j1.348
500 1.251 + j1.137 7.359 − j1.031
525 1.315 + j1.397 7.168 − j0.762
550 1.388 + j1.652 6.949 − j0.542
575 1.470 + j1.903 6.712 − j0.368
600 1.563 + j2.152 6.465 − j0.237
625 1.668 + j2.398 6.214 − j0.145
650 1.788 + j2.642 5.962 − j0.089
675 1.925 + j2.885 5.714 − j0.064
700 2.082 + j3.125 5.472 − j0.066
725 2.262 + j3.362 5.238 − j0.093
750 2.470 + j3.594 5.012 − j0.141
775 2.711 + j3.816 4.796 − j0.207
800 2.989 + j4.025 4.590 − j0.289
825 3.310 + j4.213 4.394 − j0.385
850 3.680 + j4.369 4.208 − j0.493
875 4.103 + j4.478 4.031 − j0.611
900 4.580 + j4.519 3.864 − j0.737
001aai086
gate
Zi
drain
ZL
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 11 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
7.5 Reliability
925 5.103 + j4.467 3.706 − j0.871
950 5.656 + j4.291 3.556 − j1.011
975 6.205 + j3.963 3.415 − j1.157
1000 6.696 + j3.463 3.281 − j1.308
Table 8. Typical push-pull impedance
…continued
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 42 V and P
L(PEP)
= 300 W.
f ZiZL
MHz Ω Ω
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 13. BLF878 electromigration (IDS(DC), total device)
001aai087
103
10
102
105
104
106
Years
1
IDS(DC) (A)
0 2416842012
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 12 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
8. Test information
[1] American technical ceramics type 180R or capacitor of same quality.
[2] American technical ceramics type 100B or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
Table 9. List of components
For test circuit, see Figure 14,Figure 15 and Figure 16.
Component Description Value Remarks
B1, B2 semi rigid coax 25 Ω; 43.5 mm EZ90-25-TP
C1, C2 multilayer ceramic chip capacitor 8.2 pF [1]
C3, C9 multilayer ceramic chip capacitor 3.9 pF [2]
C4 multilayer ceramic chip capacitor 2.7 pF [2]
C5, C7, C8 multilayer ceramic chip capacitor 6.8 pF [1]
C6 multilayer ceramic chip capacitor 2.2 pF [2]
C10 multilayer ceramic chip capacitor 47 pF [2]
C11, C12 multilayer ceramic chip capacitor 100 pF [1]
C13, C14 multilayer ceramic chip capacitor 100 pF [2]
C15, C16 multilayer ceramic chip capacitor 10 µF TDK C570X7R1H106KT000N or
capacitor of same quality.
C17, C18 electrolytic capacitor 470 µF; 63 V
C20 multilayer ceramic chip capacitor 15 pF [3]
C21 trimmer 0.6 pF to 4.5 pF Tekelec
C22 multilayer ceramic chip capacitor 11 pF [3]
C23 multilayer ceramic chip capacitor 3.9 pF [3]
C24 multilayer ceramic chip capacitor 4.7 pF [3]
C25, C26, C27 multilayer ceramic chip capacitor 100 pF [3]
C28, C29 multilayer ceramic chip capacitor 560 pF [2]
C30, C31 electrolytic capacitor 10 µF
L1 stripline - [4] (W × L) 24 mm × 13 mm
L2 stripline - [4] (W × L) 15 mm × 24.5 mm
L3 stripline - [4] (W × L) 5 mm × 21 mm
L4 stripline - [4] (W × L) 2.4 mm × 6mm
L5, L23 stripline - [4] (W × L) 2 mm × 43.5 mm
L6 stripline - [4] (W × L) 2 mm × 4.5 mm
L7 stripline - [4] (W × L) 5.5 mm × 24 mm
L20 stripline - [4] (W × L) 15 mm × 5mm
L21 stripline - [4] (W × L) 3 mm × 39 mm
L22 stripline - [4] (W × L) 2.4 mm × 5.7 mm
R1, R2 resistor 5.6 Ωlong wires
R3, R4 potentiometer 10 kΩ
R5, R6 resistor 10 kΩ
R7, R8 resistor 1 kΩ
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 13 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 14. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate
test voltages
001aai088
+ VG2(test)
+ VG1(test)
+ VD1(test)
+ VD2(test)
C24
C25 C10
L4
C29
C28
C30
R5
C31
R6
R2 C27
C26
C14 C16 C18
C13
C7
C8
C12
C11
R1
R3
R7
R4
R6
50 Ω50 Ω
C22 C1 C2 C3 C4 C5 C6 C9
L21
L23
B2
L22
L20 L1
L7
L6
L2
L3
C21 C20
L5
B1
C15 C17
Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier
001aai089
95 mm
80 mm
95 mm
L22
L23
L21
L20
L1
L6
L7
L2
L3
L5
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 14 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 16. Component layout for class-AB common source amplifier
001aai090
+VG1(test)
+VG2(test)
+VD1(test)
+VD2(test)
BLF878
12
mm
12
mm
7
mm
18
mm
3.6
mm
4
mm
22
mm
C16 C18
C12
C11
C9
C5
C7
C8
C4
C21
C20
C22
C23
C24
B2R4
R6
R5
R3
R7
R8
C27
C31
C28
C30 C26
C29
C25
R2
R1
C13
C15 C17
B1
C10
C3
C2
C1
C6
C14
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 15 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
9. Package outline
Fig 17. Package outline SOT979A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT979A
sot979a_po
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
E1E
c
Q
B
C
A
e
q
L
b
U2
H1
U1
Hp
w1 A B
w3
w2 C
A
D1
D
F
Unit(1)
mm max
nom
min
5.77
4.80
11.81
11.56
31.55
30.94
31.37
31.12
10.29
10.03
10.29
10.03
1.969
1.689
17.50
17.25
3.86
3.35
41.28
41.02
10.29
10.03
A
Dimensions
bc
0.15
0.10
DD
1EE
1
0.51
w2
e
13.72
FHH
1
25.53
25.27
Lp
3.30
3.05
Q
3.02
2.77
q
35.56
U1U2
0.25
inches max
nom
min
0.227
0.189
0.465
0.455
1.242
1.218
1.235
1.225
0.405
0.395
0.405
0.395
0.078
0.067
0.689
0.679
0.152
0.132
1.625
1.615
0.405
0.395
0.006
0.004 0.020
0.25
w3
0.010
0.540 1.005
0.995
0.130
0.120
0.119
0.109 1.400 0.010
w1
0 5 10 mm
scale
Note
1. millimeter dimensions are derived from the original inch dimensions.
12
34
5
08-04-24
08-09-04
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 16 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
CW Continuous Wave
CCDF Complementary Cumulative Distribution Function
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
ESD ElectroStatic Discharge
IMD3 Third order InterModulation Distortion
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM Orthogonal Frequency Division Multiplexing
PAL Phase Alternating Line
PAR Peak-to-Average power Ratio
PEP Peak Envelope Power
RF Radio Frequency
TTF Time To Failure
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF878_2 20090615 Product data sheet - BLF878_1
Modifications: •Table 4 on page 3: changed maximum value of VGS.
•Table 6 on page 3: changed several values.
•Table 7 on page 4: removed PAR specification.
BLF878_1 20081215 Preliminary data sheet - -
BLF878_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 17 of 18
NXP Semiconductors BLF878
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF878
UHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 June 2009
Document identifier: BLF878_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5
7.1.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1.3 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.2 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 8
7.2.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.2.2 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7.3 Ruggedness in class-AB operation. . . . . . . . . 10
7.4 Impedance information. . . . . . . . . . . . . . . . . . 10
7.5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 12
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13 Contact information. . . . . . . . . . . . . . . . . . . . . 17
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
