N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X * Switching Regulators * Converters * Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) 1 VDS VGS ID ID IDM1 PD Drain - Source Voltage Gate - Source Voltage Drain Current Drain Current Pulsed Drain Current Power Dissipation TJ Tstg Junction Temperature Range Storage Temperature Range TC = 25C TC = 100C TC = 25C Derate Above TC = 25C 35V 20V 1.4A 1.0A 3A 6.25W 0.05W/C -55 to +150C -55 to +150C Pulse width limited by maximum junction temperature. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9688 Issue 2 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions Min. V(BR)DSS Drain - Source Breakdown Voltage VGS = 0 ID = 10A 35 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1.0mA 0.8 IGSS Gate - Body Leakage Current IDSS Zero Gate Voltage Drain Current Typ Max. 1.6 2 V VGS = 15V 100 VDS = 0V TC =125C VDS = 35V VGS = 0 VDS = 35V VGS = 0 500 On-State Drain Current RDS(on)2 Drain - Source On Resistance VDS(on)2 Drain - Source On Voltage nA 10 500 TC = 125C ID(on)2 Units VDS = 15V VGS = 10V VGS = 5V ID = 0.3A 1.8 5 VGS = 10V ID = 1.0A 1.3 2 VGS = 5V ID = 0.3A 0.54 1.5 VGS = 10V ID = 1.0A 1.3 2 VGS = 10V ID = 1.0A 1.3 2 8 10 9 10 1.5 1.8 A A V DYNAMIC CHARACTERISTICS 2 RDS(on) Small Signal Drain - Source On Resistance f = 1.0KHz toff Turn-On Time VDD = 25V VGEN = 10V ton Turn-Off Time RL = 23 RG = 25 gFS2 Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ns ID = 1.0A VDS = 10V ID = 0.5A 170 350 ms 35 50 VGS = 0V 28 40 f = 1.0MHz 2 10 VDS = 24V pF Pulse Test tp 380 S, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9688 Issue 2 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) METAL PACKAGE PIN1 - SOURCE PIN2 - GATE Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com PIN3/CASE -DRAIN Website: http://www.semelab-tt.com Document Number 9688 Issue 2 Page 3 of 3