N-CHANNEL ENHANCEMENT
MODE MOSFET
2N6659X
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9688
Issue 2
Page 1 of 3
• Switching Regulators
• Converters
•
Motor Drives
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
35V
VGS Gate – Source Voltage
±20V
ID Drain Current TC = 25°C 1.4A
ID Drain Current TC = 100°C 1.0A
IDM
1
Pulsed Drain Current 3A
PD Power Dissipation TC = 25°C 6.25W
Derate Above TC = 25°C 0.05W/°C
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
1
Pulse width limited by maximum junction temperature.
N-CHANNEL ENHANCEMENT
MODE MOSFET
2N6659X
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9688
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)DSS Drain – Source
Breakdown Voltage VGS = 0 ID = 10µA 35
VGS(th) Gate Threshold Voltage VDS = VGS ID = 1.0mA 0.8 1.6 2
V
VGS = ±15V ±100
IGSS Gate – Body Leakage
Current VDS = 0V TC =125°C ±500
nA
VDS = 35V VGS = 0 10
VDS = 35V VGS = 0
IDSS Zero Gate Voltage Drain
Current
TC = 125°C 500 µA
ID(on)
2
On-State Drain Current VDS = 15V VGS = 10V 1.5 1.8 A
VGS = 5V ID = 0.3A 1.8 5
RDS(on)
2
Drain – Source On
Resistance VGS = 10V ID = 1.0A 1.3 2 Ω
VGS = 5V ID = 0.3A 0.54 1.5
VDS(on)
2
Drain – Source On Voltage VGS = 10V ID = 1.0A 1.3 2
V
DYNAMIC CHARACTERISTICS
VGS = 10V ID = 1.0A
RDS(on)
Small Signal Drain – Source
On Resistance f = 1.0KHz
1.3 2 Ω
toff Turn-On Time VDD = 25V VGEN = 10V 8 10
RL = 23Ω RG = 25Ω
ton Turn-Off Time ID = 1.0A
9 10
ns
gFS
2
Forward Transconductance VDS = 10V ID = 0.5A 170 350 ms
Ciss Input Capacitance 35 50
Coss Output Capacitance 28 40
Crss Reverse Transfer
Capacitance
VDS = 24V
VGS = 0V
f = 1.0MHz 2 10
pF
2
Pulse Test t
p
≤ 380 µS, δ 2%
N-CHANNEL ENHANCEMENT
MODE MOSFET
2N6659X
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9688
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO
-
39 (TO
-
205AD) METAL PACKAGE
PIN1 – SOURCE PIN2 – GATE PIN3/CASE –DRAIN
