R1171x SERIES
2.0 A/1.5 A LDO REGULATOR
NO. EA-125-1018
1
OUTLINE
The R1171x Series are CM OS-bas ed pos itive voltage regulator ICs . T he R1171x Series have features of l ow
dropout v oltage, hi gh outp u t vo ltage ac c uracy, low c on s um ption c urr en t. E ac h of t hes e ICs cons is ts of a volta ge
reference unit, an error amplifier, resistor net for setting output voltage, a current limit circuit at short mode, a
chip enable circuit, and thermal-shunt circuit. The output voltage of R1171 is fixed in the IC.
Low cons umption c urr e nt b y t he merit of CMO S proc e s s and built-in trans istor s w ith lo w O N-r es istanc e mak e
low dropout voltage and chip enable function prolongs the battery life. These regulators are remarkable
improvement on the current regulators in terms of input transient response, and load transient response.
Thus, the R1171x Series are suitable for various power sources.
Since the packages for these ICs are high wattage HSOP-6J package, TO-252-5L (Under Development), high
density mounting of the ICs on boards is possible.
FEATURES
• Low Supply Current......................................................Typ. 130µA
• Low Standby Current....................................................Typ. 0.1µA
• Output Current..............................................................Min. 1.5A (VIN=VOUT+1.0V, R1171SxxxA/B)
Min. 2.0A (VIN=VOUT+1.0V, R1171JxxxC/D)
(Under Development)
• Output Voltage..............................................................Stepwise setting with a step of 0.1V in the range of
1.5V to 5.0V for A/B Versions,
1.8V to 5.0V for C/D Versions.
• Output Voltage Ac curacy..............................................± 2.0%
• Low Dropout Voltage....................................................Typ. 0.09V (VOUT=3.0V, IOUT=300mA)
• Line Regulation ............................................................Typ. 0.05%/V
• Packages......................................................................HSOP-6J, TO-252-5L (Under Development)
• Built-in Current Limit Circuit
• Built-in Thermal Shunt Circuit
• Low Temperature-drift Coefficient of Output Voltage ...Typ. ± 100ppm/°C
• Ceramic capacitor for phase compensation.................CIN=COUT=Ceramic 10.0µF (VOUT<1.8V)
CIN=COUT=Ceramic 4.7µF (VOUT
>
=
1.8V)
APPLICATIONS
• Local Power source for Notebook PC.
• Local Power source for portable appliances, cameras, and videos.
• Local Power source for equipment of battery-use.
• Local Power source for home appliances.
R1171x
2
BLOCK DIAGRAMS
R1171SxxxA R1171SxxxB
VDD 1
3
6
GND
VOUT
CE
Vref
Current Limit
2GND
5
VDD 1
3
6
GND
VOUT
CE
Vref
Current Limit
2GND
5
R1171JxxxC (Under Development) R1171JxxxD (Under Development)
VDD 1
2
5
GND
VOUT
CE
Vref
Current Limit
4GND
3
VDD 1
2
5
GND
VOUT
CE
Vref
Current Limit
4GND
3
R1171x
3
SELECTION GUIDE
The output voltage, the chip-enable polarity, the taping type can be selected at the user's request.
The selection can be made with the part number as follows;
R1171xxx1x-xx ←Part Number
↑ ↑ ↑ ↑
a b c d
Code Contents
a Package Type;
S: HSOP-6J
J: TO-252-5L (Under Development)
b
Designation of Output Volta ge (VOUT)
Stepwise setting with 0.1V increment in the range from 1.5V to 5.0V(A/B version), from 1.8V
to 5.0V(C/D version: Under Development)
“Exception” 2.85V type: R1171x281x5-xx, 1.85V Type: R1171x181x5
c
Designation of option;
A: Built-in Chip Enable Circuit, Active at "L" (Output Current: Min. 1.5A)
B: Built-in Chip Enable Circuit, Active at "H" (Output Current: Min.1.5A)
C: Built-in Chip Enable Circuit, Active at “L” (Output Current: Min.2.0A)*Under Development
D: Built-in Chip Enable Circuit, Active at “H” (Output Current: Min.2.0A)*Under Development
d Designation of Taping Type;
E2 (HSOP-6J) (Refer to Taping Specifications)
TO-252- 5L: unf ix ed
R1171x
4
PIN CONFIGURATION
HSOP-6J TO-252-5L (Under Development)
65 4
12 3
R
12345
PIN DESCRIPTION
• HSOP-6J • TO-252-5L (Under Development)
Pin No Symbol Description Pin No Symbol Description
1 VOUT Voltage Regulator Output Pin 1 VOUT Voltage Regulator Output Pin
2 GND Ground Pin 2
CE or CE Chip Enable Pin
3 CE or CE Chip Enab le Pi n 3 GND Ground Pin
4 NC No Connection 4 GND Ground Pin
5 GND Ground Pin 5 VDD Input Pin
6 VDD Input Pin
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 7.0 V
VCE Input Voltage ( CE or CE Input Pin) −0.3 ~ VIN+0.3 V
VOUT Output Voltage −0.3 ~ VIN+0.3 V
IOUT Output Current 3.5 A
Power Diss ip ati on (H SO P-6J ) ∗1 1700
PD Power Dissip ati on (T O - 252-5L) ∗1 Under Development mW
Topt Operating Temperature −40 ~ 85 °C
Tstg Storage Temperature −55 ~ 125 °C
∗1 For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
R1171x
5
ELECTRICAL CHAR ACTERIS TICS
• R1171Sxx1A
Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output voltage VIN−VOUT=1.0V
IOUT=200mA ×0.98 ×1.02 V
IOUT Output Current VIN−VOUT=1.0V 1.5 A
∆VOUT/
∆IOUT Load regulation VIN−VOUT=1.0V
1mA
<
=
IOUT
<
=
300mA 30 60 mV
VDIF Dropout Voltage IOUT=300mA Refer to Electrical Characteristics
by Output Voltage
ISS Supply Current VIN−VOUT = 1.0V
VCE=GND 130 320
µA
Istandby Standby Current VIN−VOUT=1.0V
VIN=VCE 0.1 2.0
µA
∆VOUT/
∆VIN Line re gulation IOUT=200mA
RR Ripple Rejection f=1kHz, Ripple 0.5Vp-p
Refer to Electrical Characteristics
by Output Voltage
VIN Input Voltage 2.1 6.0 V
∆VOUT/
∆Topt Output Volta ge
Temperature Coefficient IOUT=10mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Curr ent Limit VOUT=0V 200 mA
RPU Pull-up resistancefor CE pin 2.5 5.0 10.0
MΩ
VCEH CE Input Voltage "H" 1.2 VIN V
VCEL CE Input Voltage "L" 0.00 0.25 V
TTSD Thermal Shutdown Detector
Threshold Temperature Junction Temperature 150 °C
TTSR Thermal Shutdown
Released Temperature Junction Temperature 120 °C
R1171x
6
• R1171Sxx1B
Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Reference Voltage for
Adjustab le Voltage R egu lat or VIN−VOUT=1.0V
IOUT=200mA ×0.98 ×1.02 V
IOUT Output Current VIN−VOUT=1.0V 1.5 A
∆VOUT/
∆IOUT Load regulation VIN−VOUT=1.0V
1mA
<
=
IOUT
<
=
300mA 30 60 mV
VDIF Dropout Voltage IOUT=300mA Refer to Electrical Characteristics
by Output Voltage Table
ISS Supply Current VIN−VOUT=1.0V VCE=VIN 130 320
µA
Istandby Standby Current VIN−VOUT=1.0V
VCE=GND 0.3 1.0
µA
∆VOUT/
∆VIN Line re gulation IOUT=200mA
RR Ripple Rejection f=1kHz, Ripple 0.5Vp-p
Refer to Electrical Characteristics
by Output Voltage Table
VIN Input Voltage 2.1 6.0 V
∆VOUT/
∆Topt Output Volta ge
Temperature Coefficient −40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Current Limit VOUT=0V 200 mA
RPD Pull-down resistance
for CE pin 2.5 5.0 10.0
MΩ
VCEH CE Input Volta ge "H " 1.2 VIN V
VCEL CE Input Volta ge "L " 0.00 0.25 V
TTSD Thermal Shutdown
Detector Threshold Temperature Junction Temperature 150 °C
TTSR Thermal Shutdown
Released Temperature Junction Temperature 120 °C
R1171x
7
• R1171Jxx1C ( Under Development)
Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output voltage VIN−VOUT=1.0V
IOUT=200mA ×0.98 ×1.02 V
IOUT Output Current VIN−VOUT=1.0V 2.0 A
∆VOUT/
∆IOUT Load regulation VIN−VOUT=1.0V
1mA
<
=
IOUT
<
=
300mA 30 60 mV
VDIF Dropout Voltage IOUT=300mA Refer to Electrical Characteristics
by Output Voltage
ISS Supply Current VIN−VOUT=1.0V
VCE=GND 130 320
µA
Istandby Standby Current VIN−VOUT = 1.0V
VIN=VCE 0.1 2.0 µA
∆VOUT/
∆VIN Line regulation IOUT=200mA
RR Ripple Rejection f=1kHz,Ripple 0.5Vp- p
Refer to Electrical Characteristics
by Output Voltage
VIN Input Voltage 2.1 6.0 V
∆VOUT/
∆Topt Output Volta ge
Temperature Coefficient IOUT=10mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Current Lim it VOUT=0V 200 mA
RPU Pull-up resistancefor CE pin 2.5 5.0 10.0
MΩ
VCEH CE Input Voltage "H" 1.2 VIN V
VCEL CE Input Voltage "L" 0.00 0.25 V
TTSD Thermal Shutdown
Detector Threshold Temperature Junction Temperature 150 °C
TTSR Thermal Shutdown
Released Temperature Junction Temperature 120 °C
R1171x
8
• R1171Jxx1D ( Under Development)
Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Reference Voltage for
Adjustab le Voltage R egu lat or VIN−VOUT=1.0V
IOUT=200mA ×0.98 ×1.02 V
IOUT Output Current VIN−VOUT=1.0V 2.0 A
∆VOUT/
∆IOUT Load regulation VIN−VOUT=1.0V
1mA
<
=
IOUT
<
=
300mA 30 60 mV
VDIF Dropout Voltage IOUT=300mA Refer to Electrical Characteristics
by Output Voltage
ISS Supply Current VIN−VOUT=1.0V,VCE=VIN 130 320
µA
Istandby Standby Current VIN−VOUT=1.0V,VCE=GND 0.1 2.0
µA
∆VOUT/
∆VIN Line re gulation IOUT=200mA
RR Ripple Rejection f=1kHz, Ripple 0.5Vp-p
Refer to Electrical Characteristics
by Output Voltage
VIN Input voltage 2.1 6.0 V
∆VOUT/
∆Topt Output Voltage
Temperature Coefficient IOUT=10mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Current Lim it VOUT=0V 200 mA
RPD Pull-down resistance
for CE pin 2.5 5.0 10.0
MΩ
VCEH CE Input Voltage "H " 1.2 VIN V
VCEL CE Input Voltage "L " 0.00 0.25 V
TTSD Thermal Shutdown
Detector Threshold Temperature Junction Temperature 150 °C
TTSR Thermal Shutdown
Released Temperature Junction Temperature 120 °C
R1171x
9
• El ect rical Characteristics by Out put Volt age (Topt=
==
=25°
°°
°C)
Dropout Voltage (V)
Output Voltage VOUT (V) Typ. Max.
1.5
<
=
VOUT<1.6 0.16 0.35
1.6
<
=
VOUT<1.7 0.14 0.32
1.7
<
=
VOUT<1.8 0.13 0.28
1.8
<
=
VOUT<2.0 0.12 0.24
2.0
<
=
VOUT<2.5 0.10 0.21
2.5
<
=
VOUT
<
=
5.0 0.09 0.18
Load regulation
∆
∆∆
∆VOUT/∆
∆∆
∆VIN (%/V)
Output Voltage
VOUT (V) Condition Typ. Max.
1.5
<
=
VOUT<1.6 2.1
<
=
VOUT<6.0
1.6
<
=
VOUT
<
=
5.0 VOUT+0.5V
<
=
VIN
<
=
6.0V 0.05 0.30
Ripple Rejection
RR (dB)
Output Voltage
VOUT (V) Condition Typ.
1.5
<
=
VOUT<4.7 VIN−VOUT=1.0V
4.7
<
=
VOUT
<
=
5.0 VIN=5.75V 50
R1171x
10
TEST CIRCUI TS
IOUT
IN VDD VOUT
CE
GND COUT
CIN
OUT
R1171xxx1B
Series
ISS
IN VDD VOUT
CE
GND COUT
CIN
OUT
R1171xxx1B
Series
Standard Test Circuit Supply Current Test Circuit
IOUT
IN VDD VOUT
CE
GND COUT
OUT
R1171xxx1B
Series
P.G.
IN VDD VOUT
CE
GND
COUT
CIN
OUT
R1171xxx1B
Series
I1 I2
Test Circuit for Ripple Rejection, Test Circuit for Load Transient Response
Input Transient Response
R1171x
11
TYPICAL CHARACTERISTIC S
1) Output Voltage vs. Output Current (Topt=25°
°°
°C)
R1171S151x R1171S201x
0 2500 30001500 20001000500 3500
Output Current I
OUT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.8
1.6
Output Voltage V
OUT
(V)
V
IN
=2.5V
V
IN
=2.0V
V
IN
=3.5V
0 2500 30001500 20001000500 3500
Output Current I
OUT
(mA)
0
0.5
1.0
1.5
2.0
2.5
Output Voltage V
OUT
(V)
V
IN
=2.5V
V
IN
=4.0V
V
IN
=3.0V
R1171S301x R1171S501x
0 2500 30001500 20001000500 3500
Output Current I
OUT
(mA)
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
Output Voltage V
OUT
(V)
V
IN
=4.0V
V
IN
=3.5V
V
IN
=5.0V
0 2500 30001500 20001000500 3500
Output Current I
OUT
(mA)
0
1
2
3
4
5
6
Output Voltage V
OUT
(V)
V
IN
=5.5V
V
IN
=6.0V
2) Output Voltage vs. Input Voltage (Topt=
==
=25°
°°
°C)
R1171x151B R1171x201B
I
OUT
=1mA
I
OUT
=10mA
I
OUT
=100mA
I
OUT
=300mA
I
OUT
=500mA
145326
Input Voltage V
IN
(V)
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Output Voltage VOUT(V)
I
OUT
=1mA
I
OUT
=10mA
I
OUT
=100mA
I
OUT
=300mA
I
OUT
=500mA
145326
Input Voltage V
IN
(V)
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Output Voltage VOUT(V)
R1171x
12
R1171x301B R1171x501B
I
OUT
=1mA
I
OUT
=10mA
I
OUT
=100mA
I
OUT
=300mA
I
OUT
=500mA
24536
Input Voltage V
IN
(V)
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
Output Voltage VOUT(V)
I
OUT
=1mA
I
OUT
=10mA
I
OUT
=300mA
I
OUT
=500mA
4.0 5.55.04.5 6.0
Input Voltage V
IN
(V)
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
Output Voltage VOUT(V)
3)Dropout Voltage vs. Output Current
R1171S151x R1171S201x
0 1250250 750 1000500 1500
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(V)
85
°C
25
°C
-40
°C
0 1250250 750 1000500 1500
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(V)
85
°C
25
°C
-40
°C
R1171S301x R1171S501x
0 1250250 750 1000500 1500
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(V)
85
°C
25
°C
-40
°C
0 1250250 750 1000500 1500
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(V)
85
°C
25
°C
-40
°C
R1171x
13
4) Output Voltage vs. Temperature
R1171x151B R1171x201B
-50 75-25 25 500 100
1.40
1.60
1.55
1.50
1.45
Temperature Topt(°C)
Output Voltage V
OUT
(V)
V
IN
=2.5V, I
OUT
=200mA
-50 75-25 25 500 100
1.90
2.10
2.05
2.00
1.95
Temperature Topt(°C)
Output Voltage V
OUT
(V)
V
IN
=3.0V, I
OUT
=200mA
R1171x301B R1171x501B
-50 75-25 25 500 100
2.80
3.20
3.10
3.00
3.15
3.05
2.90
2.85
2.95
Temperature Topt(°C)
Output Voltage V
OUT
(V)
V
IN
=4.0V, I
OUT
=200mA
-50 75-25 25 500 100
4.80
5.20
5.10
5.00
5.15
5.05
4.90
4.85
4.95
Temperature Topt(°C)
Output Voltage V
OUT
(V)
V
IN
=5.0V, I
OUT
=200mA
5) Supply Current vs. Input Voltage (Topt=
==
=25°
°°
°C)
R1171x151B R1171x201B
01 45326
Input Voltage V
IN
(V)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
01 45326
Input Voltage V
IN
(V)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
R1171x
14
R1171x301B R1171x501B
01 45326
Input Voltage V
IN
(V)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
01 45326
Input Voltage V
IN
(V)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
6) Supply Current vs. Temperature
R1171x151B R1171x201B
V
IN
=2.5V
-50 -25 50 75250 100
Temperature Topt(°C)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
V
IN
=3.0V
-50 -25 50 75250 100
Temperature Topt(°C)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
R1171x301B R1171x501B
V
IN
=4.0V
-50 -25 50 75250 100
Temperature Topt(°C)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
V
IN
=6.0V
-50 -25 50 75250 100
Temperature Topt(°C)
0
100
50
150
200
250
300
350
Supply Current I
SS
(µA)
R1171x
15
7) Dropout Voltage vs. Set Output Voltage (Topt=
==
=25°
°°
°C)
R1171Sxx1x
I
OUT
=1500mA
I
OUT
=1000mA
I
OUT
=600mA
I
OUT
=200mA
14325
Set Output Voltage V
SET
(V)
0
0.3
0.2
0.1
0.4
0.5
0.6
0.7
0.8
Dropout Voltage V
DIF
(V)
8) Ripple Rejection vs. Frequency
R1171x151B R1171x201B
IOUT=1mA
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=500mA
0.1 10.01.0 100.0
0
80
60
70
40
50
20
30
10
Ripple Frequency f(kHz)
Ripple Rejection RR(dB)
VIN=2.5V+0.5Vp-p
IOUT=1mA
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=500mA
0.1 10.01.0 100.0
0
80
60
70
40
50
20
30
10
Ripple Frequency f(kHz)
Ripple Rejection RR(dB)
VIN=3.0V+0.5Vp-p
R1171x301B R1171x501B
IOUT=1mA
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=500mA
0.1 10.01.0 100.0
0
80
60
70
40
50
20
30
10
Ripple Frequency f(kHz)
Ripple Rejection RR(dB)
VIN=4.0V+0.5Vp-p
IOUT=1mA
IOUT=10mA
IOUT=100mA
IOUT=200mA
IOUT=500mA
0.1 10.01.0 100.0
0
80
60
70
40
50
20
30
10
Ripple Frequency f(kHz)
Ripple Rejection RR(dB)
VIN=5.75V+0.5Vp-p
R1171x
16
9) Ripple Rejection vs. Input Vol t age
R1171x301x R1171x301x
3.1 3.43.33.2 3.5
0
80
60
70
40
50
20
30
10
Input Voltage V
IN
(V)
Ripple Rejection RR(dB)
I
OUT
=1mA,C
OUT
=4.7µF
f=400Hz
f=1kHz
f=10kHz
3.1 3.43.33.2 3.5
0
80
60
70
40
50
20
30
10
Input Voltage V
IN
(V)
Ripple Rejection RR(dB)
I
OUT
=10mA,C
OUT
=4.7µF
f=400Hz
f=1kHz
f=10kHz
R1171x301x R1171x301x
3.1 3.43.33.2 3.5
0
80
60
70
40
50
20
30
10
Input Voltage V
IN
(V)
Ripple Rejection RR(dB)
I
OUT
=100mA,C
OUT
=4.7µF
f=400Hz
f=1kHz
f=10kHz
3.1 3.43.33.2 3.5
0
80
60
70
40
50
20
30
10
Input Voltage V
IN
(V)
Ripple Rejection RR(dB)
I
OUT
=300mA,C
OUT
=4.7µF
f=400Hz
f=1kHz
f=10kHz
R1171x301x
3.1 3.43.33.2 3.5
0
80
60
70
40
50
20
30
10
Input Voltage V
IN
(V)
Ripple Rejection RR(dB)
I
OUT
=500mA,C
OUT
=4.7µF
f=400Hz
f=1kHz
f=10kHz
R1171x
17
10) Input Transient Response (Topt=
==
=25°
°°
°C)
R1171x151B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
1.40
1.50
1.45
1.55
1.60
1.65
1.75
1.70
1.80
0
1.0
0.5
1.5
2.0
2.5
3.5
3.0
4.0
Input Voltage
Output Voltage
tr=tf=5
µ
s, I
OUT
=1000mA, C
OUT
=Ceramic 10
µ
F
R1171x201B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
1.90
2.00
1.95
2.05
2.10
2.15
2.25
2.20
2.30
0.5
1.5
1.0
2.0
2.5
3.0
4.0
3.5
4.5
Input Voltage
Output Voltage
tr=tf=5
µ
s, I
OUT
=1000mA, C
OUT
=Ceramic 4.7
µ
F
R1171x301B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
2.90
2.95
3.00
3.05
3.15
3.10
3.20
1.0
1.5
2.5
2.0
3.0
3.5
4.0
5.0
4.5
5.5
Input Voltage
Output Voltage
tr=tf=5
µ
s, I
OUT
=1000mA, C
OUT
=Ceramic 4.7
µ
F
R1171x
18
R1171x501B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
4.90
5.00
4.95
5.05
5.10
5.15
5.25
5.20
5.30
3.5
4.5
4.0
5.0
5.5
6.0
7.0
6.5
7.5
Input Voltage
Output Voltage
tr=tf=5
µ
s, I
OUT
=1000mA, C
OUT
=Ceramic 4.7
µ
F
11) Load Transient Response (Topt=
==
=25°
°°
°C)
R1171x151B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
1.35
1.55
1.50
1.45
1.40
1.60
1.65
1.70
1.80
1.75
1.85
0
1500
500
1000
2000
Output Current
Output Voltage
tr=tf=10
µ
s, V
IN
=2.5V, C
OUT
=Ceramic 10
µ
F
R1171x201B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
1.85
2.05
2.00
1.95
1.90
2.10
2.15
2.20
2.30
2.25
2.35
0
1500
500
1000
2000
Output Current
Output Voltage
tr=tf=10
µ
s, V
IN
=3.0V, C
OUT
=Ceramic 4.7
µ
F
R1171x
19
R1171x301B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
2.85
3.05
3.00
2.95
2.90
3.10
3.15
3.20
3.30
3.25
3.35
0
1500
500
1000
2000
Output Current
Output Voltage
tr=tf=10
µ
s, V
IN
=4.0V, C
OUT
=Ceramic 4.7
µ
F
R1171x501B
080604020 180160140120100 200
Time t(µs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
4.85
5.05
5.00
4.95
4.90
5.10
5.15
5.20
5.30
5.25
5.35
0
1500
500
1000
2000
Output Current
Output Voltage
tr=tf=10
µ
s, V
IN
=6.0V, C
OUT
=Ceramic 4.7
µ
F
R1171x
20
Technical Notes on Exte rnal Components and Typical Application
1. Phase Compensation
In these ICs , phase com pensatio n is m ade with the o utput capacit or for s ecuring s table operatio n even if the
load current is varied. For this purpose, use a capacitor with the capacitance range from 4.7µF to 10.0µF, as CL.
In case that using a tantalum capacitor and the ESR of the tantalum capacitor is too large, unstable operation
may result. Fully evaluation is necessary for the whole circuit with considering the frequency characteristic.
2. Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, large current may flow and the pick-up noise or
unstable operation may result. Therefore use a capacitor with a capacitance range from 4.7µF to 10.0µF
between VDD pin and GND pin as close as possible. Both GND pins should be soldered to the same GND plane.
Further, set an output capacitor between VOUT pin and GND pin for phase compensation as close as possible.
(Refer to the example of typical application)
IN
VDD VOUT
CE
GND
CL
CI
OUT
R1171Sxx1B
R1171Sxx1B Typical Application
1.5V
<
=
VOUT<1.8V : CI=10µF (Ceramic),CL=10µF (Ceramic)
1.8V
<
=
VOUT
<
=
5.0V : CI=4.7µF (Ceramic),CL=4.7µF (Ceramic)
3. Output Short Protection Function
In the R1171x Series, the output short protection function is built in, further, if the output is short to the GND or
other voltage li ne, t he c hi p i nside is heat ing, as a r esu lt, in cas e th at th e j unc tio n te mperatur e bec omes equal or
mor e than 150°C (Typ.), the built- in thermal s hutdown circuit work s. If the junctio n temperature becom es equal
or more than 150°C (Typ.), the IC is protected by the output short protection circuit and the thermal shutdown
circuit.
R1171x
21
ESR vs. Output Current (Topt=25°
°°
°C, VIN = Set Output Voltage+1V, CIN = Ceramic 10µF)
VIN CIN
VOUTCE
R1171xxx1B COUT Spectrum
A
nalyze
r
IOUT
ESR
VIN S.A
GND
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type
capacitor can be used with this IC.
For your ref er enc e, nois e le ve l is tes te d wit h th e c irc uit as s ho wn a bo ve, a nd if the nois e le vel is 40µV or less
than 40µV, the ESR values are plotted as stable area. Upper limit is described in the next four graphs, or ESR vs.
Output Current. (Hatched area is the stable area.)
R1171S151x R1171S151x
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 10µF
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 4.7µF
R1171x
22
R1171S301x R1171S301x
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 4.7µF
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 2.2µF
R1171S501x R1171S501x
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 4.7µF
0 250 500 750 1000 1250 1500
Output Current IOUT(mA)
0.01
100
1
0.1
10
ESR(Ω)
CIN=COUT=Ceramic 2.2µF
