ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2 1 of 7
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ZXTP25060BFH
60V PNP MEDIUM POWER TRANSISTOR IN SOT23
Features and Benefits
• BVCEO > -60V Breakdown Voltage
• 100V forward blocking voltage
• I
C = -3A Continuous Collector Current,
• I
CM = -9A Peak Pulse Current,
• Low saturation voltage, VCE(sat) < -85mV @ -1A
• R
CE(sat) = 58 mΩ for a low equivalent on-resistance
• 1.25W power dissipation using SuperSOT package
• Complementary part number ZXTN25060BFH
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free, Green Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case material: molded Plastic. “Green” molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.008 grams (Approximate)
Applications
• MOSFET drivers
• Power switches
• Motor control
Ordering Information (Note 3)
Product Case Reel size (inches) Tape width (mm) Quantity per reel
ZXTP25060BFHTA SOT23 7 8mm 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/
Marking Information
028 = Product Type Marking Code
028
Top View Top View
Pin-Out
Device Symbol
SOT23
E
B
C
C
E
B
ZXTP25060BFH
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage (forward blocking) VCEX -100 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Collector Voltage (reverse blocking) VECO -7 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current IC -3 A
Peak pulse Current ICM -9 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
(Note 4)
PD
0.73
5.84
W
(Note 5) 1.05
8.4
(Note 6) 1.25
9.6
(Note 7) 1.81
14.5
Thermal Resistance, Junction to Ambient
(Note 4)
RθJA
171
°C/W
(Note 5) 119
(Note 6) 100
(Note 7) 69
Thermal Resistance, Junction to Lead (Note 8) RθJL 74.95 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper.
6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper.
7. Same as note (6), except the device is measured at t<5secs.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTP25060BFH
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -100 -120 - V IC = -100 µA
Collector-Emitter Breakdown Voltage (forward blocking) BVCEX -100 -120 - V IC = -100 µA,
RBE < 1kΩ or -0.25V < VBE < 1V
Collector-Emitter Breakdown Voltage (base open) (Note 9) BVCEO -60 -80 - V
IC = -10mA
Emitter- Collector Breakdown Voltage
(Reverse blocking) (Note 9) BVECO -7 -8.6 - V
IE = -100µA
Emitter-Base Breakdown Voltage BVEBO -7 -8.1 - V
IE = -100µA
Collector Cutoff Current ICBO -
-
< -1
- -50
-20
nA
µA VCB = -80V
VCB = -80V, TA = 100°C
Collector emitter Cutoff Current ICEX - - -100 nA
VCE = -80V,
RBE < 1kΩ or -0.25V < VBE < 1V
Emitter Cutoff Current IEBO - < -1 -50 nA
VEB = -6V
Static Forward Current Transfer Ratio (Note 9) hFE 100
75
30
200
150
60
300
-
- - IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -3A, VCE = -2V
Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -940 -1040 mV
IC = -3A, IB = -300mA
Base-Emitter turn-on Voltage (Note 9) VBE(on) - -830 -930 mV
IC = -3A, VCE = -2V
Collector-Emitter Saturation Voltage (Note 9) VCE(sat)
-
-
-
-
-45
-100
-70
-175
-55
-135
-85
-235
mV
IC = -0.5A, IB = -50mA
IC = -0.5A, IB = -10mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
Transition Frequency fT - 250 - MHz
IC = -100mA, VCE = -5V,
f = 100MHz
Collector Output Capacitance (Note 9) COBO - 17.6 30 pF
VCB = -10V, f = 1MHz
Turn-on time t(on) - 26.5 - ns
VCC = -10V, IC = -500mA,
IB1 = IB2 = -50mA
Turn-off time t(off) - 291 - ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
ZXTP25060BFH
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Typical Characteristics
1m 10m 100m 1 10
10m
100m
1
10m 100m 1
0.0
0.1
0.2
0.3
0.4
1m 10m 100m 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m 10m 100m 1
0.4
0.6
0.8
1.0
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1.2
0
40
80
120
160
200
240
280
320
360
IC/IB=100
VCE(SAT) v IC
Tamb=25°C
IC/IB=50
IC/IB=20
IC/IB=10
- VCE(SAT) (V)
- IC Collector Cu r r ent ( A )
100°C
VBE(SAT) v IC
IC/IB=10
150°C
25°C
-55°C
- VCE(SAT) (V)
- IC Col le ctor Current (A)
150°C
hFE v IC
VCE=2V
-55°C
25°C
100°C
Normalised Gain
- IC Collector Current (A)
150°C
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
- VBE(SAT) (V)
- IC Col le ctor Current (A)
150°C
VBE(ON) v IC
VCE=2V
100°C
25°C
-55°C
- VBE(ON) (V)
- IC Coll ector Curren t (A)
Typical Gain (hFE)
ZXTP25060BFH
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Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2 7 of 7
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ZXTP25060BFH
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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