A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data * BVCEO > -60V Breakdown Voltage * Case: SOT23 * 100V forward blocking voltage * Case material: molded Plastic. "Green" molding Compound. * IC = -3A Continuous Collector Current, * UL Flammability Rating 94V-0 * ICM = -9A Peak Pulse Current, * Moisture Sensitivity: Level 1 per J-STD-020 * Low saturation voltage, VCE(sat) < -85mV @ -1A * Terminals: Matte Tin Finish * RCE(sat) = 58 m for a low equivalent on-resistance * Weight: 0.008 grams (Approximate) * 1.25W power dissipation using SuperSOT package * Complementary part number ZXTN25060BFH * Lead Free, RoHS Compliant (Note 1) * Halogen and Antimony Free, Green Device (Note 2) * Qualified to AEC-Q101 Standards for High Reliability Applications * MOSFET drivers * Power switches * Motor control C SOT23 C B Top View E B E Device Symbol Top View Pin-Out Ordering Information (Note 3) Product Case Reel size (inches) Tape width (mm) Quantity per reel ZXTP25060BFHTA SOT23 7 8mm 3000 Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com/ Marking Information 028 ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 028 = Product Type Marking Code 1 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit VCBO -100 V Collector-Emitter Voltage (forward blocking) VCEX -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Collector Voltage (reverse blocking) VECO -7 V Emitter-Base Voltage VEBO -7 V IC -3 A ICM -9 A Symbol Value Unit Collector-Base Voltage Continuous Collector Current Peak pulse Current Thermal Characteristics @TA = 25C unless otherwise specified Characteristic 0.73 (Note 4) Power Dissipation Linear derating factor 5.84 1.05 (Note 5) PD (Note 6) 1.81 14.5 (Note 4) Thermal Resistance, Junction to Ambient (Note 6) 171 RJA (Note 7) Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Note 8) W 9.6 (Note 7) (Note 5) 8.4 1.25 119 100 C/W 69 RJL 74.95 C/W TJ, TSTG -55 to +150 C 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper. 6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper. 7. Same as note (6), except the device is measured at t<5secs. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 2 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH Thermal Characteristics 1oz ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 3 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH Electrical Characteristics @TA = 25C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO -100 -120 - V Collector-Emitter Breakdown Voltage (forward blocking) BVCEX -100 -120 - V Collector-Emitter Breakdown Voltage (base open) (Note 9) BVCEO -60 -80 - V IC = -10mA BVECO -7 -8.6 - V IE = -100A BVEBO -7 -8.1 - V IE = -100A - < -1 -50 nA VCB = -80V - - -20 A VCB = -80V, TA = 100C Emitter- Collector Breakdown Voltage (Reverse blocking) (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current ICBO Collector emitter Cutoff Current ICEX - - -100 nA Emitter Cutoff Current IEBO - < -1 -50 nA 100 200 300 Static Forward Current Transfer Ratio (Note 9) hFE 75 150 - 30 60 - Test Condition IC = -100 A IC = -100 A, RBE < 1k or -0.25V < VBE < 1V VCE = -80V, RBE < 1k or -0.25V < VBE < 1V VEB = -6V IC = -10mA, VCE = -2V - IC = -1A, VCE = -2V IC = -3A, VCE = -2V Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -940 -1040 mV IC = -3A, IB = -300mA Base-Emitter turn-on Voltage (Note 9) VBE(on) - -830 -930 mV IC = -3A, VCE = -2V - -45 -55 IC = -0.5A, IB = -50mA - -100 -135 IC = -0.5A, IB = -10mA - -70 -85 - -175 -235 fT - 250 - MHz COBO - 17.6 30 pF VCB = -10V, f = 1MHz Turn-on time t(on) - 26.5 - ns VCC = -10V, IC = -500mA, Turn-off time t(off) - 291 - ns IB1 = IB2 = -50mA Collector-Emitter Saturation Voltage (Note 9) Transition Frequency Collector Output Capacitance (Note 9) Notes: VCE(sat) mV IC = -1A, IB = -100mA IC = -3A, IB = -300mA IC = -100mA, VCE = -5V, f = 100MHz 9. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2% ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 4 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH Typical Characteristics 1 0.4 Tamb=25C IC/IB=10 0.3 - VCE(SAT) (V) - VCE(SAT) (V) IC/IB=100 100m IC/IB=50 IC/IB=20 10m 1m 0.2 150C 100C 0.1 25C IC/IB=10 10m 100m -55C 1 0.0 10m 10 - IC Collector Current (A) 100m VCE(SAT) v IC VCE(SAT) v IC 1.2 280 100C 240 1.0 0.8 200 25C 160 0.6 0.4 120 80 -55C 0.2 0.0 1m 40 10m 100m 1.0 320 150C 25C 0.8 0.6 150C 100C 0.4 0 10 1 IC/IB=10 -55C - VBE(SAT) (V) 1.4 360 VCE=2V Typical Gain (hFE) Normalised Gain 1.6 1 - IC Collector Current (A) 1m 10m 100m 1 - IC Collector Current (A) - IC Collector Current (A) hFE v IC VBE(SAT) v IC 1.2 VCE=2V 1.0 - VBE(ON) (V) -55C 25C 0.8 0.6 150C 100C 0.4 1m 10m 100m 1 10 - IC Collector Current (A) VBE(ON) v IC ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 5 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH Package Outline Dimensions A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C X ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 6 of 7 www.diodes.com January 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTP25060BFH IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com ZXTP25060BFH Document number: DS33374 Rev. 4 - 2 7 of 7 www.diodes.com January 2012 (c) Diodes Incorporated