ATTENUATORS - ANALOG - CHIP
1
1 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
v01.0709
General Description
Features
Functional Diagram
Wide Bandwidth: 5 - 30 GHz
Excellent Linearity: +28 dBm Input P1dB
Wide Attenuation Range: 30 dB
Compact Die Size: 1.4 x 1.2 x 0.1 mm
Electrical Specications, TA = +25° C, 50 Ohm system
Typical Applications
The HMC712 is ideal for:
• Point-to-Point Radio
• VSAT Radio
• Test Instrumentation
• Microwave Sensors
• Military, ECM & Radar
The HMC712 die is an absorptive Voltage Variable
Attenuator (VVA) which operates from 5 - 30 GHz and
is ideal in designs where an analog DC control signal
must be used to control RF signal levels over a 30 dB
amplitude range. It features two shunt-type attenuators
which are controlled by two analog voltages, Vctrl1
and Vctrl2. Optimum linearity performance of the
attenuator is achieved by rst varying Vctrl1 of the 1st
attenuation stage from -3V to 0V with Vctrl2 xed at
-3V. The control voltage of the 2nd attenuation stage,
Vctrl2, should then be varied from -3V to 0V, with Vctrl1
xed at 0V.
However, if the Vctrl1 and Vctrl2 pins are connected
together it is possible to achieve the full analog
attenuation range with only a small degradation in
input IP3 performance. Applications include AGC
circuits and temperature compensation of multiple
gain stages in microwave point-to-point and VSAT
radios.
Parameter Min. Typ. Max. Units
Insertion Loss
5 - 16 GHz
16 - 24 GHz
24 - 30 GHz
2.5
3.5
4.5
dB
dB
dB
Attenuation Range 30 dB
Input Return Loss 12 dB
Output Return Loss 10 dB
Input Power for 1 dB Compression (any attenuation) 28 dBm
Input Third Order Intercept
(Two-tone Input Power = 10 dBm Each Tone) 32 dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Attenuation vs. Vctrl2
Over Temperature @ 10 GHz, Vctrl1 = 0V
Attenuation vs. Frequency over Vctrl
Vctrl1 = Variable, Vctrl2 = -3V
Attenuation vs. Vctrl1
Over Temperature @ 10 GHz, Vctrl2 = -3V
Attenuation vs. Pin @ 10 GHz
Vctrl1 = Variable, Vctrl2 = -3V
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Attenuation vs. Frequency over Vctrl
Vctrl1 = 0V, Vctrl2 = Variable
-15
-10
-5
0
2 6 10 14 18 22 26 30
-3.0 V
-1.8 V
-1.4 V
-0.8 V
0.0 V
ATTENUATION (dB)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
-3 -2.5 -2 -1.5 -1 -0.5 0
+25 C
+85 C
-55 C
ATTENUATION (dB)
Vctrl1 (V)
-10
-8
-6
-4
-2
0
0 5 10 15 20
-3.0 V
-1.8 V
-1.2 V
-0.6 V
0.0 V
ATTENUATION (dB)
INPUT POWER (dBm)
-35
-30
-25
-20
-15
-10
-5
0
-3 -2.5 -2 -1.5 -1 -0.5 0
+25 C
+85 C
-55 C
ATTENUATION (dB)
Vctrl2 (V)
-50
-40
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.8 V
-1.4 V
-0.8 V
0.0 V
ATTENUATION (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output Return Loss
Vctrl1 = 0V, Vctrl2 = Variable
Output Return Loss
Vctrl1 = Variable, Vctrl2 = -3V
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Input Return Loss
Vctrl1 = 0V, Vctrl2 = Variable
-40
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.6 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.6 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.6 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
Input Return Loss
Vctrl1 = Variable, Vctrl2 = -3V
-50
-40
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.6 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
Insertion Phase vs. Vctrl2, Vctrl1 = 0V
-225
-180
-135
-90
-45
0
45
90
135
180
-3 -2.5 -2 -1.5 -1 -0.5 0
2 GHz
5 GHz
10 GHz
20 GHz
25 GHz
INSERTION PHASE (degrees)
VCTRL 2
Insertion Phase vs. Vctrl1, Vctrl2 = -3V
-180
-135
-90
-45
0
45
90
135
180
-3 -2.5 -2 -1.5 -1 -0.5 0
2 GHz
5 GHz
10 GHz
20 GHz
25 GHz
INSERTION PHASE (degrees)
VCTRL 1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Input IP3 vs Input Power @ 10 GHz
Vctrl1 = Variable, Vctrl2 = -3V
Input IP3 vs. Input Power Over Frequency
Vctrl1 = -2.2V, Vctrl2 = -3V (Worst Case IP3)
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Input IP3 vs. Input Power Over Temperature
@ 10 GHz, Vctrl1 = -2.2V, Vctrl2 = -3V
Attenuation vs. Input Power over Vctrl
Vctrl1 = Vctrl2
Attenuation vs. Vctrl over Temperature
@ 10 GHz, Vctrl1 = Vctrl2
Attenuation vs. Frequency over Vctrl
Vctrl1 = Vctrl2
20
25
30
35
40
0 5 10 15 20
10 GHz
15 GHz
20 GHz
25 GHz
IP3 (dBm)
SINGLE TONE INPUT POWER (dBm)
25
30
35
40
0 5 10 15 20
+25 C
+85 C
-55 C
IP3 (dBm)
SINGLE TONE INPUT POWER (dBm)
10
20
30
40
50
60
0 5 10 15 20
-3.0 V
-2.4 V
-2.2 V
-1.8 V
0.0 V
IP3 (dBm)
SINGLE TONE INPUT POWER (dBm)
-50
-40
-30
-20
-10
0
2 9 16 23 30
-3 V
-1.8 V
-1.4 V
-0.8 V
0 V
ATTENUATION (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0 5 10 15 20
-3 V
-1.8 V
-1.4 V
-.8 V
0 V
ATTENUATION (dB)
INPUT POWER (dBm)
-40
-30
-20
-10
0
-3 -2.5 -2 -1.5 -1 -0.5 0
+25 C
+85 C
-40 C
ATTENUATION (dB)
CONTROL VOLTAGE (V)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Absolute Maximum Ratings
RF Input Power +30 dBm
Control Voltage Range +1 to -5V
Channel Temperature 150 °C
Thermal Resistance
(Channel to die bottom) 64 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Control Voltages
Vctrl1 -3 to 0V @ 10 µA
Vctrl2 -3 to 0V @ 10 µA
Input IP3 vs. Input Power Over
Vctrl @ 10 GHz, Vctrl1 = Vctrl2
0
10
20
30
40
50
60
0 5 10 15 20
-2.6 V
-2.2 V
-1.8 V
-1.4 V
0 V
IP3 (dBm)
SINGLE TONE INPUT POWER (dBm)
Output Return Loss, Vctrl1 = Vctrl2
-40
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.8 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
Input Return Loss, Vctrl1 = Vctrl2
-40
-30
-20
-10
0
2 6 10 14 18 22 26 30
-3.0 V
-1.8 V
0.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Outline Drawing
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006” CENTER TO
CENTER EXCEPT AS NOTED.
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Assembly Diagram
Pad Number Function Description Interface Schematic
1 RFIN
This pad is DC coupled and matched to 50 Ohms.
A blocking capacitor is required if RF line potential
is not equal to 0V.
2 RFOUT
3 Vctrl2 Control Voltage 2
4 Vctrl1 Control Voltage 1
GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D