MSCXXXX.PDF 01-19-99
MS1531
DESCRIPTION:DESCRIPTION:
The MS1531 is a gold metallized NPN silicon bipolar transistor
optimized for Class A operation in TV driver application.
Emitter ballasting provides reliability and stability under
Class A linear operation.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
VCES Collector-Emitter Voltage 65 V
PDISS Power Dissipation 31.8 W
ICDevice Current 1.6 A
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 5.5 °°C/W
FeaturesFeatures
• 860 MHz
• 25 VOLTS
• CLASS A OPERATION
• POUT = 4 WATTS
• GP = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
UHF TV/LINEAR APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 01-19-99
MS1531
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 5 mA IE = 0mA 65 --- --- V
BVCES IC = 10 mA VBE = 0 V 65 --- --- V
BVCEO IC = 5 mA IB = 0 mA 20 --- --- V
BVEBO IE = 5 mA IC = 0 mA 3.5 --- --- V
ICBO VCB = 40 V IE = 0 mA --- --- 1.0 mA
HFE VCE = 5 V IC = 800 mA 20 --- 200 ---
DYNAMIC DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 860 MHz P
IN
= 0.63V V
CE
= 25V 4.0 --- --- W
GPf = 860 MHz P
IN
= 0.63V V
CE
= 25V 8.0 --- --- dB
IMD3f = 860 MHz P
IN
= 0.63V V
CE
= 25V -60 dBc
Cob f =1 MHz VCB = 25V --- --- 20 pf
Condition
s
VCE = 25 V ICQ = 850 mA
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
470 MHz 2.3 + j 1.7 11.3 + j 5.2
600 MHz 1.9 + j 1.9 10.6 + j 2.9
700 MHz 1.4 + j 2.4 8.4 + j 6.1
860 MHz 1.2 + j 3.4 5.6 + j 4.2
PIN = 0.63
VCE = 25 V
MSCXXXX.PDF 01-19-99
MS1531
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
