MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS133 Features * * * * Glass sealed envelope. (MSD) High speed. (trr=1.2ns Typ) High reliability. Silicon epitaxial planar High Speed Switching Diode Absolute maximum Ratings Symbol V RM VR IFM IO Isurge PD TJ TSTG Rating Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Surge Current (1s) Power Dissipation Operating Junction Temperature Storage Temperature DO-35 Rating 90 80 400 130 600 300 -55 to +150 -55 to +150 Unit V V mA mA mA mW O C O C D A Cathode Mark B D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units --- 1.2 Vdc --- 0.5 uAdc --- 2.0 pF --- 4.0 ns C OFF CHARACTERISTICS VF IR CT trr Forward Voltage (IF=100mAdc) Reverse Current (V R=80Vdc) Capacitance Between Terminals (V R=0.5Vdc, f=1.0MHz ) Reverse Recovery Time (VR=6.0Vdc, IF=10mAdc, RL=50OHM) Revision: 3 DIMENSIONS DIM A B C D INCHES MIN ------1.000 MAX .166 .079 .020 --- www.mccsemi.com MM MIN ------25.40 MAX 4.2 2.00 .52 --- NOTE 2002/12/31 MCC 100 REVERSE CURRENT : IR (nA) 3000 20 10 5 2 Ta=12 5C Ta=75 C Ta=25C Ta=-25 C FORWARD CURRENT : IF (mA) 50 1 0.5 0.2 0 100C 1000 70C 300 50C 100 Ta=25C 30 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 0 FORWARD VOLTAGE : VF (V) 80 100 120 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 10 3 VR=6V Irr=1/10IR SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (ns) 60 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics 2 1 0 0 40 CAPACITANCE BETWEEN TERMINALS : CT(pF) 1SS133 10 20 30 PULSE Single pulse 5 2 1 0.5 0.2 0.1 0.01 0.1 Fig. 4 Reverse recovery time characteristics 0.01F 1 10 100 1000 PULSE WIDTH : Tw (ms) FORWARD CURRENT : IF (mA) Fig.5 Surge current characteristics D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig. 6 Reverse recovery time (trr) measurement circuit Revision: 3 www.mccsemi.com 2002/12/31