SIEMENS Silicon PIN Diodes @ RF switch @ PF attenuator for frequencies above 10 MHz @ Low distortion factor @ Long-term stability of electrical characteristics BAR 14-1 ... BAR 16-1 VPS05161 Type Marking Ordering Code Pin Configuration Package") (tape and reel) BAR 14-1 L?7 Q62702-A772 3 SOT-23 1 F ' 2 EHAO7005 BAR 15-1 L8 Q62702-A731 3 { p 4 2 EHAO7004 BAR 16-1 L9 Q62702-A773 3 1 Kj DI 2 EHAO7006 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Va 100 Vv Forward current Ir 140 mA Total power dissipation, 7s < 65 C2 Prot 250 mw Junction temperature Tj 150 Cc Storage temperature range Tstg ~ 55... + 150 Operating temperature range Top 55... + 150 Thermal Resistance Junction - ambient Riva < 500 KAY Junction - soldering point Rinus < 340 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 146 07.94 SIEMENS BAR 14-1 ... BAR 16-1 Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. max. Reverse current Ja Va= 50V - - 100 [nA Va= 100 V - - 1 pA Forward voltage Ve ~ 1.05 Vv Ir = 100 mA Diode capacitance Cr pF Va = 50 V, f= 1 MHz - 0.25 | 0.5 Va = 0, f= 100 MHz - 0.2 - Forward resistance n Q f= 100 MHz, fr = 0.01 mA - 2800 |- Ie =0.10 mA - 380 | - Ie= 1mMA - 45 - le=10MA - 7 - Zero bias conductance & - 50 - uS Va = 0, f= 100 MHz Charge carrier life time 1 0.7 1 - Bs Ir=10mA, JR=6MA Semiconductor Group 147 SIEMENS BAR 14-1 ... BAR 16-1 Forward current Jr =f (VF) BAR 14-3...16-7 107 EHOO7065 mA i 4a! 10 107! 2 10 0.0 0.5 1.0 Y 1.5 - J; Forward resistance r = f (Ir) f= 100 MHz 104 BAR 1t4~1...16-1 HD07066 reg t | 10 107 10! 10 107? 19071 10 10' ma 10? |, Semiconductor Group Forward current Jr = f (Ts; Ta*) Package mounted on aluminia EHO07068 200 BAR 14-1...16-f 4 mA 160 140 120 * 100 80 60 40 20 0 50 1 150 ~ Tt, Diode capacitance Cr = f (Vr) BAR 14-1...16-1 EHDO7067 1.0 co pF 0.5 f=} MHz f=100 MHz 0.0 0 10 20 30 40 V 50 148