1N4154 FAST SWITCHING DIODE POWER SEMICONDUCTOR Features * * * * Fast Switching Speed Suitable for General Logic Applications High Conductance Available in Surface Mount Version (LL4154) B A A C D Mechanical Data * * * * * DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.) Dim Min Max A 25.40 B 4.00 C 0.60 D 2.00 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol 1N4154 Unit VRM 35 V VRRM VRWM VR 25 V Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) 18 V IO 150 mA IFSM 0.5 2.0 A Pd 500 mW RJA 300 K/W Tj, TSTG -65 to +175 C RMS Reverse Voltage Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t 1.0s @ t = 1.0s Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Min Max Unit Maximum Forward Voltage Drop VFM 1.0 V IF = 30mA Maximum Peak Reverse Current IRM 100 nA A VR = 25V VR = 25V, Tj = 150C Junction Capacitance Cj 4.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Note: Test Condition 1. Valid provided that leads are kept at ambient temperature. DS12015 Rev. F-2 1 of 2 1N4154 1000 IF, FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 400 300 200 100 0 100 Tj = 100C 10 1.0 0.1 0.01 0 100 200 0 1 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 2 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics 10,000 Tj = 25C f = 1.0MHz IR, LEAKAGE CURRENT (nA) 1.1 RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)] Tj = 25C 1.0 0.9 0.8 1,000 100 10 0.7 VR = 25V 1 0 2 4 6 8 10 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Leakage Current vs Junction Temperature VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation DS12015 Rev. F-2 0 2 of 2 1N4154