DS12015 Rev. F-2 1 of 2 1N4154
1N4154
FAST SWITCHING DIODE
Features
•Fast Switching Speed
•Suitable for General Logic Applications
•High Conductance
•Available in Surface Mount Version
(LL4154)
•Case: DO-35, Plastic
•Leads: Solderable per MIL-STD-202,
Method 208
•Marking: Type Number
•Polarity: Cathode Band
•Weight: 0.13 grams (approx.)
Mechanical Data
Maximum Ratings @ TA= 25°C unless otherwise specified
Note: 1. Valid provided that leads are kept at ambient temperature.
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol 1N4154 Unit
Non-Repetitive Peak Reverse Voltage VRM 35 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR25 V
RMS Reverse Voltage VR(RMS) 18 V
Average Rectified Output Current (Note 1) IO150 mA
Non-Repetitive Peak Forward Surge Current @ t ≤1.0s
@ t = 1.0µsIFSM 0.5
2.0 A
Power Dissipation (Note 1) Pd500 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 300 K/W
Operating and Storage Temperature Range Tj,T
STG -65 to +175 °C
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage Drop VFM 1.0 V IF= 30mA
Maximum Peak Reverse Current IRM 100 nA
µAVR= 25V
VR= 25V, Tj= 150°C
Junction Capacitance Cj4.0 pF VR= 0V, f = 1.0MHz
Reverse Recovery Time trr 4.0 ns IF= IR= 10mA,
Irr = 0.1 x IR,R
L= 100Ω
A A
B
C
D
DO-35
Dim Min Max
A25.40
B4.00
C0.60
D2.00
All Dimensions in mm
POWER SEMICONDUCTOR
DS12015 Rev. F-2 2 of 2 1N4154
0
100
200
300
400
500
0 100 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A°
1.0
0.1
0.01
10
100
1000
012
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
F
T = 100 C
j°T=25C
j°
0.7
0.8
0.9
1.0
1.1
024 6810
RELATIVE CAPACITANCE RATIO
[C (V )/C (0V)]
TOT R TOT
V , REVERSE VOLTAGE (V)
Fig. 3 Relative Capacitance Variation
R
T=25C
f = 1.0MHz
j°
1
10
100
1,000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE ( C)
Fig. 4 Leakage Current vs Junction Temperature
j°
V = 25V
R
