Die no. A-31 PNP medium power transistor These epitaxial planar PNP silicon Dimensions (Units : mm) transistors are gold doped. SST3 Features oe oo.2 1.90.2 0.98 701 * available in the following packages: 0.4520.1 SSTS3 (SST, SOT-23) a @ey SMT3 (SMT, SC-59) mE UMTS (SST, SOT-323) cot MPTS (MPT, SOT-89), vor vew | [ests see page 300 collector-to-emitter breakdown 1) Emitte voltage, BVcE9 = 40 V (min) at 1.0 mA | ( Emit r * current gain specified from 0.1 mA to 1 (3) Collector 500 mA e high transition frequency, f = 250 MHz (min) at lp = 20 mA SMT3 Device types 2,940.2 1920.2 Vane? Package Pp be P. ki 0.95 0.95 0,840.1 style art number art marking . Qole_r SST3 SST2907A R2F ie (SOT-23) |SST4403 R2T SMT3 MMST2907A R2F oy -_ , (SC-59) |MMST4403 R2T oP view {le 0.15 o'ae/| > TOP VI +0.) same ns UMT3 |UMT2907A R2F 0-40.08 Eachlead has same dinensio (SOT-323) |UMT4403 R2T 9.8 Min. MPT Py 2 (1) Emitter (SOT-89) RXT2907A AC It iE (2) Base J. _ (3) Collector Applications on * 088 * general purpose, medium power, switching and amplifier transistor Surface Mount Transistors RONM 303A-31 Transistors (US/European) PNP UMT3 MPT3 2.00.2 = +0.2 130.1 0.90.1 i et Paar) 0.65 0.65 rr i Vera ae \ 13 o~0.1 i) BEE " TT te ad ha sane ere 7 Sloaso.s(Lo-sa0.1l eb 0.3*9"' (0.15 0.05 olgeo.t id VSeoT TOP VIEW [3.00.2 22 (1) Emitter - 0.9 (1) Base (2) Base hoo (2) Collector (3) Collector z ; (3) Emitter 10 C] 15 Op Prstrst Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcpo 50 V Collector-to-emitter voltage Voeo 40 V Emitter-to-base voltage VeBo 6 Vv Collector current Ic 800 mA |DC SST3 (SOT-23) 200 SMTS3 (SC-59) 200 Power __ |UMT3 P, mW _ |For derating, see derating curve following dissipation (SOT-323) c 200 , MPT3 (SOT-89) 500 Junction temperature T; 55 ~ +150 C 304 Surface Mount TransistorsTransistors (US/European) PNP A-31 Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol} Min |Typical; Max Unit Conditions Collector-to-base = breakdown voltage BVca0 | 50 V_ |lc=50 nA Collector-to-emitter _ breakdown voltage BVceo | 40 Vi |lc=LomA Emitter-to-base = breakdown voltage BVepo | 6 Vi fle = 10 pA Collector cutoff current IcBo 50 nA |Vcogp=40V Emitter cutoff current leso 50 nA |Veg=4V 50 200 I = 100 A, Voge = 10 V 50 230 Io =1.0mA, Vce =10V DC current gain hee 50 240 Io =10MA, Voge =10V 50 210 lo= 100 mA, Vce= 10V 30 180 Io = 500 MA, Voge = 10 V Collector-to-emitter V 0.1 0.4 y__ (!c/p= 100 mA/10 mA saturation voltage CE (sat) 03 | 06 Ic /Ig = 500 mA/50 mA Base-to-emitter saturation | ,, 0.95 y___[!e/tp = 100 mA/10 mA voltage BE(sat) 12 Ig /lg = 500 mA/SO mA AC current gain Ne 40 Io = 10 MA, Vog = 10 V, f = 1 kHz Collector output - =) f= capacitance Cob 7 pF Vos =5.0V, I; =0, f= 1 MHz Collector input ; _ an te capacitance Cip 25 PF |Veg =5.0V, Io =0, f= 1 MHz Transition frequency fr 200 MHz |Ilo=20mA, Veg = 10 V, f= 100 MHz og Io = 100 pA, Voge = 10 V, Noise figure NF 2 3 dB Fig = 10 KO, f= 1 KHz . : Io= 150 mA, Ip1 = 15 mA, Rise time t i) ns Voc = 30 V . Ic= 150 mA, ley = 15mA, Delay time ty 20 ns Voc = 30 V . lo= 150 mA, ley =15mA, Turn on time ton 35 ns Voc = 30V Storage time ts 225 ns {Io = 150 mA, Ip; = Igo = 15 mA Fall time t 30 ns lo = 150 mA, Ip1 = Igo =15mA Note: Minus sign for PNP transistor is omitted Surface Mount Transistors ROM 305A-31 Transistors (US/European) PNP Electrical characteristic curves Ic-COLLECTOR CURRENT (mA) 00 50 0 Ta=25C le/lg = 10 a= 600 = Wa 2 & a oO > & 400 - z 300 E ai 200 E = Fe} 400 3 ao ip=O nA 3 0 5 10 a) 10 100 1000 Vog-COLLECTOR-EMITTER VOLTAGE (V) > ic-COLLECTOR CURRENT (mA) Figure 1 Figure 2 1000 [Fanos hre-DC CURRENT GAIN 8 0. 1.0 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 3 1000 Ta= (25C Ta=25C hpe-DC CURRENT GAIN e oa 0.1 1.0 10 (00 (000 (c-COLLECTOR CURRENT (mA) Figure 4 306 ROM Surface Mount TransistorsTransistors (US/European) PNP A-31 1000 Ta=25C Vce = 10V f= kHz hge-AC CURRENT GAIN 2 S 0.1 1.0 19 (00 1000 Ic COLLECTOR CURRENT (mA) Figure 5 Ta=25C Io tp= 10 Vae(on)-BASE EMITTER ON VOLTAGE (V) Vog(sat)-COLLECTOR EMITTER SATURATION VOLTAGE (V) t.0 to 100 'c00 1.0 10 100 1000 le-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 6 Figure 7 1000 # Ta=25C = Vee=10V = 5 3 2 4 8 o x > oa z E A too z 2 5 < 3 5 3 3 & @ 2 x 3 1, 10 100 1000 out I (0 {00 1000 Ie-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 8 Figure 9 Surface Mount Transistors ROM 307A-31 Transistors (US/European) PNP Ta=25C f= IMHz CAPACITANCE (pF) s 0.1 \ 0 100 REVERSE BIAS VOLTAGE (V) Figure 10 500 Ta=25C Voc = 30V Ic/tp = 10 a = 100 Fe} = = WwW 2 * + 10 5 I 10 100 1000 Ie-COLLECTOR CURRENT (mA) Figure 12 1000 a= Voc = 30V tc = [0lai = t Olge tf-FALL TIME (ns) 3 | 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 14 1000 Ta=25C Ic/Ip= 10 gz ia = a z 100 z - r ee 10 \ 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 11 | 000 Ta=25C Voc = 30V lc= [0le) = 1 0lez 2 lay 2 - i 100 3 - 4 40 i 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 13 120 t00 z S - x 80 3 a p 60 a a 40 5 = oO 8 20 a 0 0 25 50 75 100 125 150 T, AMBIENT TEMPERATURE (C) Figure 15 308 Surface Mount Transistors