UTS54ACS 157/UTS4ACTS 157 Radiation-Hardened Quadruple 2 to 1 Multiplexers FEATURES PINOUTS * 1.2p radiation-hardened CMOS - Latchup immune High speed + Low power consumption * Single 5 volt supply Available QML Q or V processes * Flexible package - 16-pin DIP - 16-lead flatpack DESCRIPTION The UTS4ACS 157 and the UT54ACTS 157 are monolithic data selectors/multiplexers. A 4-bit word is selected from one of two sources and is routed to the four outputs. A separate strobe input, G, is provided. The devices are characterized over full military temperature WB range of -55C to +125C. AI FUNCTION TABLE BI INPUTS OUTPUT 0 STROBE SELECT DATA B2 G AB A B Y Y2 H x x x L Vss L L L x L L L H x H L H x L L L H xX H H Note: LOGIC SYMBOL @ 9) AB Al B1 A2 B2 A3 B3 Aa Ba 16-Pin DIP Top View Ae [1 16 [7] Voo Ai(]2 15 A 6 B13 14[[]) A4 vit}4 13 I Ba A2 12 y4 B2C|6 = =11 [7] AB Y2[(]7 10/7) 83 Vss [8 97 3 16-Lead Flatpack Top View EN G1 1 2 3 4 5 6 7 8 16 15 14 13 12 n 10 9 Vpo A4 4 A3 B3 3 v1 Y2 3 y4 These symbols are in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 91 Rad-Hard MSI Logic UTS4ACS157/UT54ACTS 157 LOGIC DIAGRAM 1A 1B 2A 2B 3A 3B 4A 4B STROBEG SELECT A/B Rad-Hard MSI Logic 92 UTS4ACS157/UTS4ACTS 157 RADIATION HARDNESS SPECIFICATIONS ! PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU & SEL Threshold * 80 MeV-cm7/mg Neutron Fluence 1.0E14 nfcm2 Notes: 1, Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage -0.3 to 7.0 v Vio Voltage any pin -.3 to Vpp +.3 Vv TstG Storage Temperature range -65 to +150 C Ty Maximum junction temperature +175 C TLs Lead temperature (soldering 5 seconds) +300 C yc Thermal resistance junction to case 20 C/W i DC input current +10 mA Pp Maximum power dissipation 1 Ww Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage 4.55.5 v Vin Input voltage any pin Oto Vpp v Tec Temperature range -55 to + 125 C 93 Rad-Hard MSI Logic DC ELECTRICAL CHARACTERISTICS 7 (Vpp = 5.0V 910%: Vgg = OV 9, -55C < Te < +125 C) UTS4ACS157/UTS54ACTS 157 SYMBOL PARAMETER CONDITION MIN MAX UNIT Vit Low-level input voltage ! ACTS meee 0.8 Vv ACS 3Vpp Vin High-level input voltage ! ACTS SVpp Vv ACS pp lin Input leakage current ACTS/ACS Vin = Vpp or ss -1 1 HA Vo. Low-level output voltage 3 ACTS Ig, = 8.0mMA 0.40 Vv ACS Ip, = 100HA 0.25 Vou High-level output voltage 3 ACTS lox = -8.0mA -7Vpp Vv ACS lou = -100HA Vpp - 0.25 los Short-circuit output current 7-4 ACTS/ACS Vo = Vpp and Vsg -200 200 mA Protal Power dissipation ? Cy = SOpF 19 mW/ MHz Ippo Quiescent Supply Current Vpp = 5.5V 10 pA Cw Input capacitance 4 f = iMHz @ 0V 15 pF Cour Output capacitance f= IMHz @ 0V 15 pF Notes: 1.Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: Viy = Vyg(min) + 20%, - 0%; Vi, = Vy_(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltag within the above specified range, but are guaranteed to Vj,,(min) and V); (max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-M-38510, for current density $ 5.0E5 amps/cm/, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF MHz. 4, Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and Veg at frequency of 1MHz and a signal amplitude of SOmV ms maximum. 6. Maximum allowable relative shift equals 50m V. 7. All specifications valid for radiation dose < 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. Rad-Hard MSI Logic 94 UTS4ACS157/UTS4ACTS157 AC ELECTRICAL CHARACTERISTICS 2 (Vpp = 5.0V 410%; Vgg = OV ! -55C < Te < +125C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT (pot Data to output Yn 2 15 ns boy Data to output Ya 2 13 ns tpHL Strobe to output Yn 2 15 ns teLy Strobe to output Yn 2 12 ns (pH Select to output Yn 2 16 ns teLy Select to output Yn 2 14 ns Notes: 1. Maximum allowable relative shift equals SOmV. 2. All specifications valid for radiation dose $ 1E6 rads(Si). 95 Rad-Hard MSI Logic