66
■Selecting External Components
1. Inductor L1
1) It must be suited for switching regulators.
Do not use inductors such as noise filters, because they generate excessive heat.
2) It must have the appropriate inductance value.
If the inductance is too small (150µH or lower), abnormal oscillation may occur causing operation problems in the overcurrent protection
circuit within the rated current range.
3) The rated current must be satisfied.
If the rated current is exceeded, magnetic saturation leads to overcurrent.
2. Capacitors C1 and C2
1) They must satisfy the breakdown voltage and allowable ripple current.
Exceeding the ratings of these capacitors or using them without derating shortens their service lives and may also cause abnormal
oscillation of the IC.
2) C2 should be a low-impedance type capacitor.
A low-impedance type capacitor is recommended for C2 to ensure reduced ripple voltage and stable switching operation.
3. Diode D1
The Sanken SFPB54 diode is recommended for D1. If you intended to use an equivalent diode, be sure to use a Schottky Barrier diode and
make sure that the reverse voltage applied to terminal 2 of the IC does not exceed the value (–1V) given in the absolute maximum ratings. If
you use a fast recovery diode or any other diode, supplying a reverse voltage generated from the recovery or ON voltage of the diode may
damage the IC.
Application
Variable output voltage
Output voltage can be adjusted in the same way as SI-8000S in page 77.
■Example of Printed Circuit Board
a) For optimum operation, there must be only
one GND line originating from terminal 4
and each component must be connected
with the shortest possible wiring.
b) To prevent heating of the IC, it is best to
make the GND pattern as large as pos-
sible since the internal frame and ter mi-
nal 4 (GND) are connected to each other .
■Ta-PD Characteristics
The efficiency depends on the input v oltage and the out-
put current. Thus, obtain the value from the efficiency
graph on page 67 and substitute the percentage in the
formula above.
VO:Output voltage
IO:Output current
ηx:Efficiency (%)
VF:Diode forward voltage
SFPB54-0.3V
Thermal design for D1 must be considered separately.
+
+
V
IN
DI
1
C
1
L
1
C
2
GND
SW
V
O
12
34
SAI
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–30 0 25 50 75 100 125
Power Dissipation P
D
(W)
Ambient Temperature T
a
(°C)
• Glass epoxy
substrate
(95
×
69
×
1.2)
• No airflow
●SAI Series
PD=VO•IO 100 –1 –VF•IO 1– VO
ηχ VIN