SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109 Silicon Transistors 2N3900,A The General Electric 2N3900 and 2N3900A are NPN silicon planar passivated devices intended for low noise preamplifier applications. The planar passivated construction assures excellent device stability and life. These high performance, high value transistors are made possible by utilizing advanced manufacturing techniques. absolute maximum ratings (25C) unless otherwise specified Voltages Collector to Emitter Voevo 18 Emitter to Base ERO 5 Collector to Base Vero 18 Current Collector (Steady State) le 100 Dissipation Total Power (Free Air @ 25C) Py 360 Total Power (Free Air @ 55C) Pr 260 Temperature Storage Tete 55 to +125 Operating T; +100 Lead Soldering, 4 + \, Te +260 from case for 10 seconds max. <<< mA Determined from power limitations due to saturation voltage at this current. Derate 3.6 mW C increase in ambient temperature above 25C. is 3| | as 3s oO a NOTE 1: Lead diameter is zone between .070 and .250 trom the seat- ing plane. Between .250 and end of lead a max. of .021 is held. led in the ALL DIMEN. IN INCHES AND ARE REFERENCE UNLESS TOLERANCED 3 LEADS OIF +002 {NOTE 1) O78 055 265 Cu 225 -500 SEATING MIN PLANE ft 050+ .008 100+ .005 electrical characteristics (25C) unless otherwise specified Collector Cutoff Current (Ver = 18V) Teno (Ves 18V, Ts = 100C) Tono Emitter Cutoff Current (Ves = 5V) Tino Forward Current Transfer Ratio (Vow = 4.5V, Ic = 2 mA) hee SMALL SIGNAL CHARACTERISTICS Forward Current Transfer Ratio (Vee = 10V, Ic = 100 BA, f=1 kHz) hte input Impedance (Ver = 10V,Ic = 2mA,f = 1 kHz) hip Output Capacitance (Vee = 10V, Ize = 0, f = 1 MHz) Cure Gain Bandwidth Product (Ic == 4mA, Vos = 5 V) fi NOISE (wide band15 cps to 10 kHz, Equivalent Noise Bandwidth = 15.7 kHz) Noise Figure (Ic == 100 #A, Vow = 4.5V, Rg = 5000 ohms) NEF Typically a minimum of 95% of the distribution is above this value. Type 2N3900A only. 393 Min. 250 170 2.0 Typ. Max, A 10 Al 500 200 15 7 12 160 1.9 5 uA uA ohms pF MHz dB [_2n3900, A_| 350 300 250 200 hee 150 (00 50 Ol 02 hee VS AmA,OimA hge NORMALIZED TO 2mA, 25C -40 -20 SOURCE RESISTANCE Rg IN OHMS 04 .06.06.1 2 4 20 TYPICAL CURVES 2N3900 AND 2N3900A 6 8 2 4 Ig IN mA 6 610 20 OlmA Me 500 400 300 200 100 Ol 02 04 .06.08 1 2 4 6 81 2 4 Ig IN mA 6 810 20 20 Ama Tego VS TEMPERATURE 6 Veg * 18V IN pF op p Tego IN NANO AMPS 5.6 8 |} 2 4 6 8 40 80 25c Vi VOLTS ce 40 60 1090 TEMPERATURE INC 10K 3 456 78 9 db NOISE FIGURE eK 6K aK 2k 200 190 60 60 40 CONTOURS OF CONSTANT NOISE FIGURE f IKHz Ta = 25C 20 90 56 68 10 20 40 60 80 100 Te (ua) 200 400 600 8001000 2000 394 10.0 6.0 6.0 NORMALIZED h PARAMETERS VS Ic Vo = 10% 4.0 f = 1KHZ tre hie Ta 25C 2.0 to O68 o6 04 02 ol H PARAMETERS AT Ic *0.Ima 08 hip * 120K OHMS foe * 26 MHOS bre 74 x107F hte = 420 h PARAMETERS NORMALIZED TO O.imA 06 04 02 Ol 01 02 04 .06 086.) 0.2 0.4 0.60.61.0 Ig IN-MA 2.0 40 6.080 100