SRC1211E Semiconductor NPN Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. Marking Package Code RD SOT-523 SRC1211E Outline Dimensions unit : mm * Equivalent Circuit 1.600.1. C(OUT) 1 3 2 B(IN) 0.2~0.3 1.00 BSC 1.600.1 0.800.1. R1 R1 = 10K E(COMMON) 0.1 Min. 0.700.1 0~0.1 0.15 Min. PIN Connections 1. Base 2. Emitter 3. Collector KSR-4023-001 1 SRC1211E (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ 150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=50V, IE=0 - - 500 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 10 - K Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-4023-001 2