TSUS6402
www.vishay.com Vishay Semiconductors
Rev. 1.0, 28-May-15 1Document Number: 84318
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
TSUS6402 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 950 nm
• High reliability
• Angle of half intensity: = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
TSUS6402 30 ± 22 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSUS6402 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF150 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 300 mA
Surge forward current tp = 100 μs IFSM 2.5 A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
TSUS6402
www.vishay.com Vishay Semiconductors
Rev. 1.0, 28-May-15 2Document Number: 84318
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21313
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21314
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR100 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie15 30 50 mW/sr
IF = 1.5 A, tp = 100 μs Ie120 190 mW/sr
Radiant power IF = 100 mA, tp = 20 ms e15 mW
Temperature coefficient of eIF = 20 mA TKe- 0.8 %/K
Angle of half intensity ± 22 deg
Peak wavelength IF = 100 mA p950 nm
Spectral bandwidth IF = 100 mA  50 nm
Temperature coefficient of pIF = 100 mA TKp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Virtual source diameter d 2.9 mm
Forward voltage IF = 1.5 A, tp = 100 μs VF2.2 2.7 V
TSUS6402
www.vishay.com Vishay Semiconductors
Rev. 1.0, 28-May-15 3Document Number: 84318
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity / Power vs. Ambient Temperature
tp- Pulse Duration (ms)
94 7989
100
101
101
10-1
10-1 100102
10-2
I - Forward Current (A)
F
tp/T = 0.01
IFSM = 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I - Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
10 0001
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
100010010
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
100010 100 10 000
1
0.1
1
10
1000
100
φ
-10 10 50
0100
0
0.4
0.8
1.2
1.6
Ie rel;
140
94 7993
IF = 20 mA
Φe rel
T
amb - Ambient Temperature (°C)
TSUS6402
www.vishay.com Vishay Semiconductors
Rev. 1.0, 28-May-15 4Document Number: 84318
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
900 950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
34.9 ± 0.55
Ø 5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.1)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R2.49 (sphere)
0.5 + 0.15
- 0.05
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Revision: 01-Jan-2021 1Document Number: 91000
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