(= lectronics inc. UHF / VHF TUNING DIODES CHIP DIODES TO ORDER PASSIVATED DIODE CHIPS, ADD CHIP AFTER TYPE NO. LOWEST LEAKAGE HIGH Q FOR MANY HIGHER VOLTAGE 60 YOLT ABRUPT GOOD @ HYPERABRUPT HIGH 0 HIGH Q UHF VHF USES HIGH @ GENERAL USE RATIO RATI TT RATIO 8=anae @ fATIO =e RATIO ve cartes spate Tyre cpeae sane | | TYPE cartse sons Whe citze soMHz Ne caiCe@ SO Me e Cates SoM: min/man min . minimax min min/max min min/man min minityp min munityp: ma GCI7S4 51 1200 GO1755 3 1200 HAISISA uw 1000 GC1756 51 1200 HAISIGA uM 1o00 6c1757 61 1100 HAISITA a 1000 Ger7se 61 1100 HAIOIBA 42 900 Gct7ss nM 1100 HAISISA 32 800 Gore W 1900 SOSS1A 2.7/3.1 680 1NSASTA 2uat 600 UMSAATA = 25/31 450 HAISZ0A 2:8 800 6C1761 nt 1000 1NS138 2129 350 saseeza 2.8/3.1 600 1S862A 2a/3.1 600 WNSMZA = 25/31 450 HAT922A 33 800 GC1762 nN 1000 SOSea3A 283.1 550 INSAOA 2.4/3.1 580 INSCQA = 28/31 400 HAIS24A 39 700 GCI763 nN 900 155148 2830 300 SOSSSEA 289.1 580 TNSOGAA 2.8/3.1 550 WNSSMSA = 26/31 000 HAI926A 39 700 GCIT64 mI 900 105141 2.8/3.0 300 SOSAESA 289.2 550 INSABSA 283.) 550 THBAABA 283.1400 RAIS70A 39 700 GCIs mM 900 15142 283.0 250 sOsseea 293.1 500 INSSOGA 2.9/3.1 $00 INSMGA = 26/31 350 HAI930A 40 600 GcrT66 nm 800 185143 2.8/3.0 250 SOSS87A 293. $00 INSOETA 29/31 800 INSMTA = 26/31 350 SOsegaa 29/32 500 1NSERSA 2.9/3.2 500 1HSSA = 26/32 350 HAISI4A 4a 600 Gctre7 mM 800 15146 32/34 200 sasessa 2972 soe 1N5ASO A 293.2 500 INSMOA = 26/3.2, 350 HAI936A ag 600 GCITES nN 600 15145 3.2134 200 Sasa7ea 2.5/3.2 soa INSATOA 2.9/3.2 500 INSASOA = 26/32 350 HA1930A 40 600 GCIs 71 600 1N5146 3.2/3.4 200 SOSI7IA 293.2 450 1NSATIA 2.9/3.2 450 IMSASIA 26/32 300 HA19404 a0 500 6c mI 600 105147 ayaa 200 SOS472A 29/32 400 1MSATZA 2973.2 600 IWSAS2A 26/32 250 HANDAZA i) 500 15148 3734 200 SOS473A 25/33 300 1NSAT3A 29/23 300 SIA = 2833 9 200 HAIO44A 40 400 SOBATOA 25/33 780 1NSATEA 29/33 250 INA = 27/330 175 HAIBOGA 40 300 WOTE IN THIS COLUMN SOSA75A 2333 OS TNSA7SA 29/33 228 WEA = 27/3.3 175 HAIBSA ao 250 ADD SUFFIX A FOR SOSe75A 2.9/3.3 200 1NSATEA 29/33 200 WSASEA 2.7/3.3 175 HATOSOA 0 200 S% CAPACITY TOLERANCE WOVdc@lA 0.004 uAde 30 Vde @ 1p = 10 vad 30 Vee @ IR = 10 vAdc 30 Vee @ 1A = 10 uAde GO Vde @ IR - 10 uAde 60 Voc @ IR = 10 wade . 0.02 uAde VA = 25 Vdc 0.02 uAde @ VR = 25 Vie 0.02 vAde @ VA = 25 Vide 0.62 uAde & VR > 55 Vic 0.02 uAdc @ VR = 55 Vic 0.004 uAdc@VR 30 Vdc 2.0 uAde @ Ta = 150C 2.0 vAde @ Ta = 150C 20 wAde @ TA = 150C 2.0 wAde @ TA + 125C 2.0 uAde @ TA = 150C 300 ppm 300 ppm/C 300 ppm/oC 400 ppm/oc 200 ppm/Pc 200 ppm/PC 007 m0? 007 007 wn og) Sa B07 HYPER c ELECTRICAL CHARACTERISTICS (Ta = 25C) GLODE CAPACITANCE (pt) CAPACITANCE @C (Volts Bias) /pf @ 1 Miz TUNING RATIO (Tal TYPE Cpt CAlet COpt caet | c3vc20 cerca carcze ase vae VAs * We no. rminirax | minimax | minfmax | minfran | minfrax | minimax | oinfmex | MME | IR=T | eye | eve CASE min Vic - in Adc max | wAdc max | wAde max me 18.0/22.0 T5NO5 | 3.139 5.4/6.6 169 22 oF 22 16.0/22.0 75/105 1827 160 15 01 aie 10.5/12.5 4.3/5.7 2.0/2.3 5.0/5.8 300 2 a 007 2102 10.5/12.5 4.3/5.7 20/24 455 200 22 at ALL 2901 10,0/13.5, 4559 5.46.1 200 2 0 2007 10.0/13.5 45/63 4.9/5.8 150 n a IV ISSsU MANUFACTURED BY ! lectranics inc. 63 2) gn O + ie) Pad -