PE42525 Document Category: Product Specification UltraCMOS(R) SPDT RF Switch, 9 kHz-60 GHz Features ] Figure 1 * PE42525 Functional Diagram * Wideband support up to 60 GHz * Low insertion loss RFC 1.3 dB @ 26.5 GHz 1.7 dB @ 45 GHz 1.9 dB @ 50 GHz RF1 2.7 dB @ 60 GHz RF2 * Fast switching time of 8 ns * High port to port isolation 41 dB @ 26.5 GHz ESD 38 dB @ 45 GHz 37 dB @ 50 GHz V1 36 dB @ 60 GHz V2 * High linearity: IIP3 of 48 dBm * Flip-chip die, pin-to-pin compatible to the PE42524 and the PE426525 Applications * Test and measurement * Microwave backhaul * Radar * Military communications Product Description The PE42525 is a HaRPTM technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin compatible to the PE42524 and the PE426525. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement (T&M), microwave backhaul, radar and military communications (mil-comm) applications. At 50 GHz, the PE42525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42525 is manufactured on Peregrine's UltraCMOS(R) process, a patented variation of silicon-on-insulator (SOI) technology. (c)2016, Peregrine Semiconductor Corporation. All rights reserved. * Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Peregrine's HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 * Absolute Maximum Ratings for PE42525 Parameter/Condition Min Max Unit Control voltage (V1, V2) -3.6 3.6 V RF input power (RFC-RFX, 50) Fig. 2 dBm Maximum junction temperature +150 C +150 C 600 1000 V V Storage temperature range -65 ESD voltage HBM(*) All pins RF pins to GND Note: * Human body model (MIL-STD 883 Method 3015). Page 2 DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Recommended Operating Conditions Table 2 lists the recommended operating conditions for PE42525. Devices should not be operated outside the recommended operating conditions listed below. Table 2 * Recommended Operating Condition for PE42525 Parameter Min Typ Max Unit Control high (V1, V2) 2.7 3.0 3.3 V Control low (V1, V2) -3.3 -3.0 -2.7 V Control current 390 nA RF input power, CW (RFC-RFX)(1) Fig. 2 dBm RF input power, pulsed (RFC-RFX)(2) Fig. 2 dBm +105 C Operating temperature range -40 +25 Notes: 1) 100% duty cycle, all bands, 50. 2) Pulsed, 5% duty cycle of 4620 s period, 50. Electrical Specifications Table 3 provides the PE42525 key electrical specifications @ +25 C, V1 = +3.0V, V2 = -3.0V or V1 = -3.0V, V2 = +3.0V (ZS = ZL = 50), unless otherwise specified. Table 3 * PE42525 Electrical Specifications Parameter Path Condition Operation frequency Insertion loss Isolation Return loss (active port) Min Typ 9 kHz RFC-RFX 100 MHz 100 MHz-26.5 GHz 26.5-45 GHz 45-50 GHz 50-60 GHz All paths 100 MHz 100 MHz-26.5 GHz 26.5-45 GHz 45-50 GHz 50-60 GHz RFC-RFX 100 MHz 100 MHz-26.5 GHz 26.5-45 GHz 45-50 GHz 50-60 GHz DOC-64730-3 - (12/2016) 0.9 1.3 1.7 1.9 2.7 74 38 33 32 29 Max Unit 60 GHz As shown 1.1 1.6 2.0 2.3 3.8 dB dB dB dB dB 80 41 38 37 36 dB dB dB dB dB 21 17 18 15 13 dB dB dB dB dB Page 3 www.psemi.com PE42525 SPDT RF Switch Table 3 * PE42525 Electrical Specifications (Cont.) Parameter Path Condition Min Typ Max Unit RFC-RFX 100 MHz 100 MHz-26.5 GHz 26.5-45 GHz 45-50 GHz 50-60 GHz 21 20 18 16 14 dB dB dB dB dB RFC-RFX +25 dBm output power, 1 GHz +25 dBm output power, 2 GHz +25 dBm output power, 6.5 GHz +25 dBm output power, 13.4 GHz 73 77 89 92 dBc dBc dBc dBc Fig. 2 dBm Input IP2 1 GHz 2 GHz 6.5 GHz 13.4 GHz 93 98 109 112 dBm dBm dBm dBm Input IP3 1 GHz 2 GHz 6 GHz 13.4 GHz 49 48 46 46 dBm dBm dBm dBm Video feed through(2) DC measurement 30 mVPP RF TRISE/TFALL 10%/90% RF 3 ns Settling time 50% CTRL to 0.05 dB final value 48 60 ns Switching time 50% CTRL to 90% or 10% RF 8 12 ns Return loss (RFC port) 2nd harmonic, 2fo Input 1dB compression point(1) Notes: 1) The input 1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50). 2) Measured with a 3.5 ns rise time, -3.0/+3.0V pulse and 100 MHz bandwidth. Control Logic Table 4 provides the control logic truth table for the PE42525. States 2 and 3 are used in normal switching operations. Table 4 * Truth Table for PE42525 V1 V2 RF1 RF2 State -3.0V -3.0V OFF OFF 1 -3.0V +3.0V OFF ON 2 +3.0V -3.0V ON OFF 3 +3.0V +3.0V ON ON 4 Page 4 DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Figure 2 * Power De-rating Curve, 9 kHz-60 GHz, -40 C to +105 C Ambient, 50 P1 dB Compression/Abs. Max. RF Input Power ( 10 MHz) Max. RF Input Power, Pulsed ( 10 MHz) Max. RF Input Power, CW & Pulsed (< 10 MHz) Max. RF Input Power, CW ( 10 MHz) 37 35 33 31 29 Input Power (dBm) 27 25 23 21 19 17 15 13 11 9 7 5 0.000005 0.00005 0.0005 0.005 0.05 0.5 5 50 Frequency (GHz) DOC-64730-3 - (12/2016) Page 5 www.psemi.com PE42525 SPDT RF Switch Typical Performance Data Figure 3-Figure 12 show the typical performance data at 25 C, V1 = +3.0V, V2 = -3.0V or V1 = -3.0V, V2 = +3.0V (ZS = ZL = 50), unless otherwise specified. Figure 3 * Insertion Loss vs Temperature (RFC-RFX) +25 C +85 C +105 C +2.7V/-2.7V 0 0 -1 -1 -2 -2 Insertion Loss (dB) Insertion Loss (dB) -40 C Figure 6 * Insertion Loss vs V1/V2 (RFC-RFX) -3 -4 -5 -6 -7 -4 -5 -6 -7 -8 -9 -9 -10 -10 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 Frequency (GHz) -40 C +25 C 25 30 35 40 45 50 55 60 Frequency (GHz) Figure 4 * RFC Port Return Loss vs Temperature +85 C Figure 7 * RFC Port Return Loss vs V1/V2 +2.7V/-2.7V +105 C -5 -5 -10 -10 Return Loss (dB) Return Loss (dB) +3.3V/-3.3V -3 -8 -15 -20 -25 +3.0V/-3.0V +3.3V/-3.3V -15 -20 -25 -30 -30 -35 -35 0 5 10 15 20 25 30 35 40 45 50 55 0 60 5 10 15 20 +25 C 30 35 40 45 50 55 60 Figure 8 * Active Port Return Loss vs V1/V2 Figure 5 * Active Port Return Loss vs Temperature -40 C 25 Frequency (GHz) Frequency (GHz) +85 C +2.7V/-2.7V +105 C -5 -5 -10 -10 Return Loss (dB) Return Loss (dB) +3.0V/-3.0V -15 -20 -25 +3.0V/-3.0V +3.3V/-3.3V -15 -20 -25 -30 -30 -35 -35 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 55 60 Frequency (GHz) Frequency (GHz) Page 6 DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Figure 9 * Isolation vs Temperature (RFX-RFX) +25 C +85 C +2.7V/-2.7V +105 C -25 -25 -30 -30 -35 -35 -40 -40 -45 -45 Isolation (dB) Isolation (dB) -40 C Figure 11 * Isolation vs V1/V2 (RFX-RFX) -50 -55 -60 -65 +3.3V/-3.3V -50 -55 -60 -65 -70 -70 -75 -75 -80 -80 -85 -85 -90 -90 0 5 10 15 20 25 30 35 40 45 50 55 0 60 5 10 15 20 Frequency (GHz) -40 C +25 C 25 30 35 40 45 50 55 60 50 55 60 Frequency (GHz) Figure 12 * Isolation vs V1/V2 (RFC-RFX) Figure 10 * Isolation vs Temperature (RFC-RFX) +85 C +2.7V/-2.7V +105 C -25 -25 -30 -30 -35 -35 -40 -40 -45 -45 Isolation (dB) Isolation (dB) +3.0V/-3.0V -50 -55 -60 -65 +3.0V/-3.0V +3.3V/-3.3V -50 -55 -60 -65 -70 -70 -75 -75 -80 -80 -85 -85 -90 -90 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 Frequency (GHz) Frequency (GHz) DOC-64730-3 - (12/2016) Page 7 www.psemi.com PE42525 SPDT RF Switch Evaluation Setup The PE42525 s-parameter data and input 1dB compression point up to 60 GHz (Table 3 and Figure 3- Figure 12) were taken using either co-planar waveguide with ground (CPWG) or grounded co-planar waveguide (GCPW) on an alumina substrate and RF probes. The PE42525 2nd harmonic, input 1dB compression point below 18 GHz, input IP3 measurements, settling time and switching time (Table 3) were taken on a PCB using 2.92 mm connectors. Bypass capacitors are not required. Figure 13 * Alumina Substrate Board for PE42525 Alumina substrate board Thickness: 0.01 in. R = 9.9 RF2 RFC PE42525 DIE V1 RF1 V2 Page 8 DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Pin Configuration Table 5 * Pin Descriptions for PE42525 This section provides pin information for the PE42525. Figure 14 shows the pin configuration of this device. Table 5 provides a description for each pin. Figure 14 * Pin Configuration (Bumps Up) for PE42525 9 GND GND RFC Pin Name 1, 2, 5, 6, 8-10, 12- 14, 16-19 GND 3 V1 Control input 1 4 V2 Control input 2 7 RF1 RF port 1 11 RFC RF common port 15 RF2 RF port 2 13 GND 10 Pin No. GND 12 Description Ground 11 GND GND 8 14 GND GND 18 16 RF1 7 GND RF2 GND GND 19 17 15 GND GND 6 2 V2 V1 4 3 5 GND 1 DOC-64730-3 - (12/2016) Page 9 www.psemi.com PE42525 SPDT RF Switch Die Mechanical Specifications This section provides the die mechanical specifications for the PE42525. Table 6 * Mechanical Specifications for PE42525 Parameter Min Typ Max Unit Die size, singulated (x, y) 2485 x 2139 2495 x 2149 2505 x 2159 m Wafer thickness 180 200 220 m Bump pitch 500 Bump height 59.5 Bump diameter UBM diameter Including excess silicon, maximum tolerance = 10 m m 70 80.5 75 m m 91 71 Test Condition 79 Page 10 m DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Table 7 * Pin Coordinates for PE42525(*) Figure 15 * Pin Layout for PE42525(1)(2) Pin Center (m) Pin Name X 9 Y 1 GND 1128.5 -958.5 2 GND 731.5 -646.5 3 V1 253.5 -958.5 4 V2 -253.5 -958.5 GND GND 13 GND RFC 10 GND 12 11 GND 5 GND -1128.5 -958.5 6 GND -731.5 -646.5 7 RF1 -785.5 -121.5 8 GND -931.5 363.5 9 GND -1091.5 913.5 10 GND -503.5 753.5 11 RFC 0 629 12 GND 503.5 753.5 13 GND 1091.5 913.5 14 GND 931.5 363.5 15 RF2 785.5 -121.5 16 GND 253.5 183.5 17 GND 253.5 -326.5 18 GND -253.5 183.5 19 GND -253.5 -326.5 GND 8 GND GND 18 16 RF1 7 GND 5 14 2149 m (10 m) Pin # RF2 GND GND 19 17 15 GND GND 6 2 V2 V1 4 3 GND 1 2495 m (10 m) Notes: 1) Drawings are not drawn to scale. 2) Singulated die size shown, bump side up. Note: * All pin locations originate from the die center and refer to the center of the pin. DOC-64730-3 - (12/2016) Page 11 www.psemi.com PE42525 SPDT RF Switch Tape and Reel Specification This section provides the tape and reel specifications for the PE42525. Figure 16 * Tape and Reel Specifications for PE42525 o1.50 + 0.10 4.00 0.05 2.00 0.05 0.20 0.05 4.00 0.10 1.75 0.10 5.50 0.05 Bo 8.00 0.10 Pocket Nominal Tolerance Ao 2.41 0.05 Bo 2.76 0.05 Ko 0.39 0.05 o0.50 0.05 Ao Ko Pin 1 Notes: Not Drawn to Scale Dimensions are in millimeters Maximum cavity angle 5 degrees Bumped die are oriented active side down Device Orientation in Tape Page 12 DOC-64730-3 - (12/2016) www.psemi.com PE42525 SPDT RF Switch Ordering Information Table 8 lists the available ordering code for the PE42525 as well as shipping method. Table 8 * Order Code for PE42525 Order Code Description Packaging Shipping Method PE42525A-X PE42525 SPDT RF switch Die on tape and reel 500 die/T&R Document Categories Advance Information Product Brief The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. This document contains a shortened version of the datasheet. For the full datasheet, contact sales@psemi.com. Preliminary Specification Not Recommended for New Designs (NRND) This product is in production but is not recommended for new designs. The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). End of Life (EOL) This product is currently going through the EOL process. It has a specific last-time buy date. Obsolete This product is discontinued. Orders are no longer accepted for this product. Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark (c)2016, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Product Specification www.psemi.com DOC-64730-3 - (12/2016)