WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS70TW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAS70TW
Marking:K73
Maximum Ratings @TA=25
Parameter Symbol
Limits Unit
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 V
Forward Continuous Current IF 70 mA
Peak forward surge current @<1.0s IFSM 100 mA
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature TJ 125 ℃
Storage temperature range TSTG -55 to +125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
VF1 0.41 V IF=1mA
Forward voltage VF2
1 V IF=15mA
Reverse curre nt IR
100 nA VR=50V
Capacitance between terminals CT
2 pF VR=0V,f=1MHz
Reverse Recovery Time trr 5 ns IF=IR=10mA
Irr=0.1XIR,RL=100Ω
1
Typical Characteristics FBAS70TW
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0.017 REF.
0.500 REF. 0.020 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP. 0.026 TYP.
0.420 REF. 0.017 REF.
0.420 REF.
0.400 REF. 0.016 REF.
0.300 REF. 0.012 REF.
APPLICATION CIRCUITS
Bridge rectifiers
