SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS:- 3 BCX54 BCX55 BCX56 BCX54 ~ BA BCX54-10 BC BCX54-16 - BD BCX55 - BE BCX55-10 - BG BCX55-16 ~ BM BCX56 - BH BCX56-10 BK BCX56-16 BL COMPLEMENTARY TYPES:- BCX54 BCX51 BCX55 - BCX52 BCX56 - BCX53 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL | BCX54 |BCX55 BCX56 UNIT Collector-Base Voltage Vego 45 60 100 Vv Collector-Emitter Voltage Veeo 45 60 80 V Emitter-Base Voltage Vezo V Peak Pulse Current lom A Continuous Collector Current lo 1 A Power Dissipation at T,,,=25C Prot 1 Ww Operating and Storage Temperature Range TT stg -65 to +150 c ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL |MIN. | TYP. | MAX. UNIT | CONDITIONS. Collector-Base Breakdown |BCX54 |Vigaiceo 45 Voltage BCX55 60 Vv Ic =100LA BCX56 100 Collector-Emitter BCXS4 |Vieryceo | 45 Breakdown Voltage BCX55 60 v Ic =10MA* BCX56 80 Emitter-Base Breakdown Voltage VieriEBO 5 Vv Ip =10pA Collector Cut-Off Current leBo 0.1 [pA 1Vog=30V 20) [pA | Veg=30V, Typ = 150C Emitter Cut-Off Current lego 20 [nA |Veg=4V Coilector-Emitter Saturation Voltage | Vc;