Preliminary Datasheet CR08AS-12A 600V - 0.8A - Thyristor Low Power Use R07DS0489EJ0300 Rev.3.00 May 22, 2013 Features * Non-Insulated Type * Planar Type * Surface Mounted type * IT (AV) : 0.8 A * VDRM : 600 V * IGT: 100 A Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 3 4 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Note1 DC off-state voltage Note1 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Voltage class Symbol Unit 12 VRRM VRSM VR(DC) VDRM VD(DC) 600 720 480 600 480 Symbol IT(RMS) IT(AV) Ratings 1.26 0.8 Unit A A ITSM 10 A I2 t 0.42 A2 s PGM PG(AV) VFGM VRGM IFGM Tj Tstg -- 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 50 W W V V A C C mg V V V V V Conditions Commercial frequency, sine half wave Note2 180 conduction, Ta=51C 60Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 1 of 7 CR08AS-12A Preliminary Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. -- Typ. -- Max. 0.5 Unit mA Repetitive peak off-state current IDRM -- -- 0.5 mA On-state voltage VTM -- -- 1.5 V Gate trigger voltage VGT -- -- 0.8 V Gate non-trigger voltage VGD 0.2 -- -- V Tj = 125C, VD = 1/2 VDRM RGK = 1 k Gate trigger current IGT 1 -- 100 A Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Holding current IH -- 1.5 3 mA Rth(j-a) -- -- 65 C/W Tj = 25C, VD = 12 V RGK = 1 k Junction to ambient Note2 Thermal resistance Test conditions Tj = 125C, VRRM applied RGK = 1 k Tj = 125C, VDRM applied RGK = 1 k Tj = 25C, ITM = 2.5 A instantaneous value Tj = 25C, VD = 6 V, IT = 0.1 A Note3 Notes: 2. Soldering with ceramic plate (25 mm x 25 mm x t0.7 mm). 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k Switch 2 60 TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 2 of 7 CR08AS-12A Preliminary Performance Curves Maximum On-State Characteristics 10 Surge On-State Current (A) Ta = 25C 101 100 1 2 3 4 Gate Voltage (V) 101 102 Gate Trigger Current vs. Junction Temperature PGM = 0.5W IGT = 100A (Tj = 25C) 10-1 VGD = 0.2V 10-1 IFGM = 0.3A 100 101 102 103 Typical Example 102 101 100 -40 0 40 80 120 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 Gate Trigger Voltage (V) 2 Gate Characteristics PG(AV) = 0.1W VGT = 0.8V 10-2 10-2 4 Conduction Time (Cycles at 60Hz) VFGM = 6V 100 6 On-State Voltage (V) 102 101 8 0 100 5 x 100 (%) 0 Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 10-1 Distribution 0.8 Typical Example 0.6 0.4 0.2 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Transient Thermal Impedance (C/W) On-State Current (A) 102 Rated Surge On-State Current 100 101 103 25x25xt0.7 Aluminum Board 102 103 10-1 100 102 101 100 10-3 10-2 Time (s) Page 3 of 7 CR08AS-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 = 30 60 90 120 180 1.4 1.2 1.0 0.8 0.6 0.4 360 0.2 0 Resistive, inductive loads 0 Ambient Temperature (C) Average Power Dissipation (W) 1.6 60 = 30 40 90 180 60 120 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) 1.6 360 100 80 65C/W 60 90C/W 40 20 R th(j-a) = 200C/W 0 Average Power Dissipation (W) Ambient Temperature (C) 80 Average On-State Current (A) = 30 60 90 120 180 1.4 1.2 1.0 0.8 0.6 0.4 0.2 360 Resistive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Maximum Average Power Dissipation (Rectangular Wave) 1.6 25x25xt0.7 140 Aluminum Board 360 120 Resistive loads Natural convection 100 80 60 40 60 120 = 30 90 180 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Average Power Dissipation (W) 160 Ambient Temperature (C) Resistive, inductive loads Natural convection 100 Average On-State Current (A) Resistive, inductive loads 140 Natural convection = 180 120 0 360 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 160 0 25x25xt0.7 140 Aluminum Board 90 180 = 30 60 120 270 DC 1.4 1.2 1.0 0.8 0.6 0.4 360 0.2 0 Resistive, inductive loads 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Page 4 of 7 CR08AS-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) x 100 (%) 100 Resistive, inductive loads Natural convection 80 60 20 90 180 DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 120 100 RGK = 1k 80 60 40 20 0 -40 0 40 80 120 160 Breakover Voltage vs. Gate to Cathode Resistance Breakover Voltage vs. Rate of Rise of Off-State Voltage Typical Example 100 80 60 40 20 Tj = 125C 101 Typical Example 140 Junction Temperature (C) 120 0 10-1 160 Average On-State Current (A) x 100 (%) 0 100 101 102 Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) x 100 (%) Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) = 30 60 120 270 160 Typical Example 140 Tj = 125C RGK = 1k 120 100 80 60 40 20 0 0 10 101 102 103 Gate to Cathode Resistance (k) Rate of Rise of Off-State Voltage (V/s) Holding Current vs. Junction Temperature Holding Current vs. Gate to Cathode Resistance Distribution Typical Example IGT(25C) = 35A 100 10-1 RGK = 1k 10-2 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) R07DS0489EJ0300 Rev.3.00 May 22, 2013 x 100 (%) 40 Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) 360 0 Holding Current (mA) 120 Holding Current (RGK = rk) Holding Current (RGK = 1k) Ambient Temperature (C) 160 25x25xt0.7 140 Aluminum Board Breakover Voltage vs. Junction Temperature 600 Typical Example 500 400 300 200 100 Tj = 25C 0 -1 10 100 101 102 Gate to Cathode Resistance (k) Page 5 of 7 CR08AS-12A Preliminary Turn-On Time vs. Gate Current Turn-Off Time vs. Junction Temperature 102 40 VD = 100V RL = 47 RGK = 1k Ta = 25C 101 100 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1k Turn-Off Time (s) Turn-On Time (s) Typical Example 30 Typical Example 25 Distribution 20 15 10 5 101 0 102 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width Typical Example 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) x 100 (%) 160 100 104 Gate Trigger Current (tw) Gate Trigger Current (DC) Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) x 100 (%) 10-1 -1 10 103 Typical Example VD = 6V RL = 60 Ta = 25C 102 101 0 10 101 102 103 Gate Current Pulse Width (s) Thermal Impedance vs. Board Dimensions Thermal resistance (C/W) 320 280 240 Without Epoxy Plate 200 160 120 80 t0.7 Aluminum Board 40 10x10 Epoxy Plate With Copper Foil 0 0 10 20 30 40 50 60 70 80 Board Dimensions (mm) Regular Square One Side R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 6 of 7 CR08AS-12A Preliminary Package Dimensions 1.5 1.5 3.0 2.5 0.1 4.25 Max 0.53 Max 0.48 Max MASS[Typ.] 0.050g 1.5 0.1 0.44 Max 0.8 Min 1 0.4 4.5 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Orderable Part Number CR08AS-12A-T14 #B10 Packing Embossed Tape Quantity 4000 pcs. Remark Taping direction "T1" Note : Please confirm the specification about the shipping in detail. R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 (c) 2013 Renesas Electronics Corporation. All rights reserved. Colophon 2.2