R07DS0489EJ0300 Rev.3.00 Page 1 of 7
May 22, 2013
Preliminary Datasheet
CR08AS-12A
600V - 0.8A - Thyristor
Low Power Use
Features
• IT (AV) : 0.8 A
• VDRM : 600 V
• IGT: 100 μA
• Non-Insulated Type
• Planar Type
• Surface Mounted type
Outline
RENESAS Packa
g
e code:
PLZZ
000
4
C
A-
A
(
Packa
g
e name:
UPAK
)
2
4
1
3
2, 4
1
3
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter Symbol
Voltage class Unit
12
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse voltage VRSM 720 V
DC reverse voltage VR(DC) 480 V
Repetitive peak off-state voltage Note1 V
DRM 600 V
DC off-state voltage Note1 V
D(DC) 480 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 1.26 A
Average on-state current IT(AV) 0.8 A
Commercial frequency, sine half wave
180° conduction, Ta=51°C Note2
Surge on-state current ITSM 10 A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
I2t for fusing I2t 0.42 A2s Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 50 mg Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ
R07DS0489EJ0300
Rev.3.00
May 22, 2013
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 2 of 7
May 22, 2013
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.5 mA
Tj = 125°C, VRRM applied
RGK = 1 kΩ
Repetitive peak off-state current IDRM — — 0.5 mA
Tj = 125°C, VDRM applied
RGK = 1 kΩ
On-state voltage VTM — — 1.5 V
Tj = 25°C, ITM = 2.5 A
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V,
IT = 0.1 A Note3
Gate non-trigger voltage VGD 0.2 — — V
Tj = 125°C, VD = 1/2 VDRM
RGK = 1 kΩ
Gate trigger current IGT 1 — 100 μA Tj = 25°C, VD = 6 V,
IT = 0.1 A Note3
Holding current IH — 1.5 3 mA
Tj = 25°C, VD = 12 V
RGK = 1 kΩ
Thermal resistance Rth(j-a) — — 65 °C/W Junction to ambient Note2
Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).
3. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
UT
1
k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 3 of 7
May 22, 2013
Performance Curves
10
3
10
2
10
1
10
0
10
2
10
3
10
1
10
0
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
4
2
6
8
10
0
501 423
10
2
10
1
10
0
10
0
10
1
10
2
10
−1
10
2
10
1
10
0
10
−2
10
−2
10
−1
10
0
10
1
10
−3
10
−2
10
−1
10
0
10
0
10
1
10
2
10
3
10
2
10
−1
V
GT
= 0.8V
I
GT
= 100μA
(Tj = 25°C)
P
GM
= 0.5W
V
GD
= 0.2V I
FGM
= 0.3A
160
04080120
–40
1.0
0.8
0.6
0.4
0120
–40 –20 20 80
0.2
60040 100
Ta = 25°C
P
G(AV)
= 0.1W
Typical Example
Distribution
Typical Example
25×25×t0.7
Aluminum Board
V
FGM
= 6V
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 4 of 7
May 22, 2013
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)
Ambient Temperature (°C)
Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)Average Power Dissipation (W)
Average On-State Current (A)
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0 1.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30° 60° 120°90°
180°
160
120
60
40
20
140
100
80
0
θ = 30°
60° 120°
90° 180°
160
120
60
40
20
140
100
80
00.8
00.2 0.4 0.6 0.70.1 0.3 0.5
65°C/W
90°C/W
R
th(j–a)
= 200°C/W
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30° 60° 120°90°
180°
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30° 60° 120°
90° 180°
270°
DC
160
120
60
40
20
140
100
80
01.6
00.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
120°
90° 180°
60°
θ
360°
Resistive,
inductive loads
25
×
25
×
t0.7
Aluminum Board
25
×
25
×
t0.7
Aluminum Board
θ
360°
Resistive,
inductive loads
Natural convection
θ
360°
Resistive, inductive loads
Natural convection
θ = 180°
θ θ
360°
Resistive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 5 of 7
May 22, 2013
10
−1
10
0
10
1
10
2
10
1
10
0
10
−1
10
−2
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 1kΩ)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (R
GK
= rkΩ)
Holding Current (R
GK
= 1kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
160
120
60
40
20
140
100
80
0160–40 0 40 80 120
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Ambient Temperature (°C)
Average On-State Current (A)
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
DC
θ = 30° 120°
180°
270°60°
90°
25
×
25
×
t0.7
Aluminum Board
θ
360°
Resistive,
inductive loads
Natural convection
0
80
100
120
40
60
20
160
0
80
100
120
140
40
60
20
600
500
0
300
400
100
200
60 8002040–20–40 100 120 140
Typical Example
R
GK
= 1kΩ
Typical Example
Tj = 125°C
Typical Example
Tj = 25°C
Tj = 125°C
R
GK
= 1kΩ
Typical Example
R
GK
= 1kΩ
I
GT
(25°C) = 35μA
Typical Example
Distribution
10
−1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 6 of 7
May 22, 2013
10
4
10
3
10
2
10
0
10
1
10
2
10
3
10
1
10
2
10
1
10
0
10
−1
10
0
10
1
10
2
10
−1
40
30
15
10
5
35
25
20
0160
040 80 120 14020 60 100
160
120
100
40
60
20
0
–40 –20 0 20 40 60 80 100 120 140
80
140
Thermal Impedance vs.
Board Dimensions
Thermal resistance (°C/W)
Board Dimensions (mm)
Regular Square One Side
320
240
120
80
40
280
200
160
080
020 40 60 7010 30 50
Without Epoxy Plate
10
×
10
Epoxy Plate With Copper Foil
Typical Example
Turn-On Time vs.
Gate Current
Turn-On Time (μs)
Gate Current (mA)
Turn-Off Time vs.
Junction Temperature
Turn-Off Time (μs)
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
×
100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Junction Temperature (°C)
×
100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Gate Current Pulse Width (μs)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example Typical Example
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
VD = 6V
RL = 60Ω
Ta = 25°C
Typical Example
Distribution
VD = 50V, VR = 50V
IT = 2A, RGK = 1kΩ
t0.7
Aluminum Board
CR08AS-12A Preliminary
R07DS0489EJ0300 Rev.3.00 Page 7 of 7
May 22, 2013
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050gSC-62
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
UPAK
Ordering Information
Orderable Part Number Packing Quantity Remark
CR08AS-12A-T 14 #B10 Embossed Tape 4000 pcs. Taping direction “T1”
Note : Please confirm the specification about the s hipping in detail.
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