Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH48N60B3D1 VCES = 600V IC110 = 48A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC110 ID110 TC = 110C TC = 110C 48 30 A A E ICM TC = 25C, 1ms 280 A SSOA VGE = 15V, TVJ = 125C, RG = 5 ICM = 120 A G = Gate E = Emitter (RBSOA) Clamped inductive load @ 600V PC TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL 1.6mm (0.062 in.) from case for 10s 300 C TSOLD Plastic body for 10 seconds 260 C Md Mounting torque 1.13/10 Nm/lb.in. 6 g Weight G C ( TAB ) C = Collector TAB = Collector Features z z z z Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard package Advantages z z High power density Low gate drive requirement Applications z Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V Typ. Max. z V 5.0 V 300 A TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 (c) 2008 IXYS CORPORATION, All rights reserved z 1.75 mA z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 100 nA 1.8 V DS100036(09/08) IXGH48N60B3D1 Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 28 TO-247 (IXGH) Outline 46 S 3980 pF 190 pF 45 pF 115 nC 21 nC Qgc 40 nC td(on) 22 ns Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 40A, VGE = 15V, VCE = 0.5 * VCES tri Inductive Load, TJ = 25C Eon IC = 30A, VGE = 15V td(off) tfi 25 0.84 VCE = 480V, RG = 5 Eoff td(on) Eon td(off) tfi mJ 130 200 ns 116 200 ns 0.66 1.20 mJ 19 Inductive Load, TJ = 125C tri ns IC = 30A, VGE = 15V VCE = 480V, RG = 5 Eoff ns 25 ns 1.71 mJ 190 ns 157 ns 1.30 mJ RthJC P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 C/W RthCS 0.21 C/W Reverse Diode (FRED) (D1 Version ONLY) Symbol VF IRM trr Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Test Conditions IF = 30A, VGE = 0V, Note 1 2.8 TJ = 150C IF= 30A, VGE = 0V, VR= 100V -diF/dt =100A/s IF = 1A; -di/dt = 100A/s, VR = 30V TJ = 100C RthJC RthCS 1.6 V V 4 A 100 ns 1.5 1.5 C/W C/W Note 1: Pulse test, t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH48N60B3D1 Fig. 2. Extended Output Characteristics @ 25C Fig. 1. Output Characteristics @ 25C 80 300 VGE = 15V 13V 11V 70 VGE = 15V 13V 11V 270 9V 240 60 IC - Amperes IC - Amperes 210 50 7V 40 30 9V 180 150 120 90 20 60 10 7V 30 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 2 4 6 Fig. 3. Output Characteristics @ 125C 12 14 16 125 150 1.4 VGE = 15V 13V 11V 70 VCE(sat) - Normalized 50 7V 40 30 20 5V 10 VGE = 15V 1.3 9V 60 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 I 1.2 C = 80A 1.1 I C = 40A 1.0 0.9 0.8 0 I C = 20A 0.7 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.8 3.6 180 TJ = 25C 3.4 160 3.2 C 2.8 140 = 80A 40A 20A IC - Amperes I 3.0 VCE - Volts 8 VCE - Volts VCE - Volts 2.6 2.4 2.2 120 100 80 60 2.0 TJ = 125C 25C - 40C 40 1.8 20 1.6 1.4 0 5 6 7 8 9 10 11 12 VGE - Volts (c) 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXGH48N60B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 TJ = - 40C 70 60 50 125C 40 I C = 40A I G = 10mA 12 25C VGE - Volts g f s - Siemens VCE = 300V 14 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 0 20 40 IC - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 140 Cies 100 1,000 IC - Amperes Capacitance - PicoFarads 120 Coes 80 60 100 40 Cres f = 1 MHz 20 10 0 5 10 15 20 25 30 35 0 100 40 TJ = 125C RG = 5 dV / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60B3D1(56) 05-05-08-A IXGH48N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 5.0 4.0 4.5 I C = 60A 3.5 2.0 VCE = 480V --- 3.0 TJ = 125C , VGE = 15V 2.5 I C = 30A 1.5 2.0 1.0 ---- 3.0 VCE = 480V 2.5 2.5 2.0 2.0 1.5 1.5 TJ = 25C 1.0 1.0 0.5 0.5 1.5 0.5 1.0 I C = 15A 0.0 0.5 0 5 10 15 20 25 30 35 40 45 50 0.0 55 0.0 15 20 25 30 RG - Ohms 3.5 Eon I ---- C 45 50 55 60 200 = 60A RG = 5 , VGE = 15V 3.0 40 Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature 3.5 Eoff 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 220 tf 190 3.0 on E 2.0 I C = 30A 1.5 1.5 1.0 1.0 0.5 0.5 - MilliJoules 2.0 t f - Nanoseconds 2.5 210 200 VCE = 480V 170 190 I 160 C = 60A, 15A 180 150 170 140 160 I 130 C = 30A 150 120 0.0 25 35 45 55 65 75 85 95 105 115 140 110 I C = 15A 25 35 45 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 220 210 210 200 190 TJ = 125C 180 150 170 140 160 130 150 120 140 TJ = 25C 110 100 15 20 25 30 35 40 45 85 95 105 115 120 125 50 IC - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 55 60 650 tf td(off) - - - - 600 TJ = 125C, VGE = 15V 550 VCE = 480V 190 500 t f - Nanoseconds 200 170 160 75 I 180 C = 60A 450 170 400 160 350 150 I C 300 = 30A 140 130 130 120 120 250 I C = 15A 200 150 0 5 10 15 20 25 30 RG - Ohms 35 40 45 50 55 t d(off) - Nanoseconds VCE = 480V 180 230 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5 , VGE = 15V 190 65 Fig. 17. Inductive Turn-off Switching Times vs. Gate Resistance 210 tf 55 TJ - Degrees Centigrade TJ - Degrees Centigrade 200 130 I C = 60A, 15A 100 0.0 125 t d(off) - Nanoseconds 2.5 td(off) - - - - RG = 5 , VGE = 15V 180 VCE = 480V Eoff - MilliJoules TJ = 125C - MilliJoules Eoff - MilliJoules Eon - 2.5 Eon RG = 5 , VGE = 15V on 3.0 Eoff E 4.0 3.5 3.0 on 3.5 3.5 Eoff - MilliJoules 4.5 E Eoff - MilliJoules Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance IXGH48N60B3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 110 70 60 70 C 55 = 60A 50 60 45 50 40 40 I C 35 = 30A 30 I 10 C = 15A 0 0 5 10 15 20 25 30 35 40 45 50 tr td(on) - - - - 50 RG = 5 , VGE = 15V 27 25C < TJ < 125C 26 VCE = 480V 45 25 40 24 35 23 30 22 TJ = 25C 25 21 25 20 20 20 15 15 10 30 20 28 55 55 t d(on) - Nanoseconds I t d(on) - Nanoseconds VCE = 480V 80 60 65 TJ = 125C, VGE = 15V 90 t r - Nanoseconds td(on) - - - - t r - Nanoseconds tr 100 19 TJ = 125C 18 15 20 25 30 35 40 45 50 55 60 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 28 60 27 55 26 I C = 60A t r - Nanoseconds 25 45 tr td(on) - - - - 40 RG = 5 , VGE = 15V 24 23 VCE = 480V 35 22 I C = 30A 30 21 25 20 20 19 I 15 C = 15A t d(on) - Nanoseconds 50 18 10 17 5 25 35 45 55 65 75 85 95 105 115 16 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60B3D1(56) 05-05-08-A IXGH48N60B3D1 1000 60 A 50 IF 30 TVJ= 100C 800 Qr TVJ=150C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100C 400 20 10 TVJ=25C 200 10 0 TVJ= 100C VR = 300V A nC V = 300V R 0 1 0 100 3 V 2 5 A/s 1000 -diF /dt VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/s 800 -diF /dt 1000 1.00 TVJ= 100C IF = 30A s VFR tfr 80 1.0 200 Fig. 23. Peak reverse current IRM versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 C 160 60 0 200 400 600 T VJ 800 A/s 1000 -diF /dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 0 0 200 400 0.00 600 A/s 800 1000 diF /dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt 1 K/W 1 ZthJC - K/W 0.1 Z thJC 0.1 0.01 0.01 0.001 0.00001 0.001 0.0001 DSEP 29-06 0.0001 0.001 0.001 0.01 0.01 0.1 0.1 t s 1 1 Time - Seconds Fig. 27. Transient thermal resistance junction to case (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: G_48N60B3D1(56) 05-05-08-A