RS1A - RS1M SENSITRON SEMICONDUCTOR 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Data Sheet 2712, Rev. A Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O B A F C H Mechanical Data SMA/DO-214AC Min Max Min Max A 2.50 2.90 0.098 0.114 B 4.00 4.60 0.157 0.181 C 1.40 1.60 0.055 0.063 D 0.152 0.305 0.006 0.012 Dim Case: Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) E 4.80 5.28 0.189 0.208 F 2.00 2.44 0.079 0.096 G 0.051 0.203 0.002 0.008 H 0.76 0.060 1.52 0.030 In mm Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current In inch @TA=25C unless otherwise specified Symbol RS1A RS1B RS1D RS1G RS1J RS1K RS1M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.30 V @TA = 25C @TA = 125C IRM 5.0 300 A Peak Reverse Current At Rated DC Blocking Voltage @TL = 90C G E Reverse Recovery Time (Note 1) trr Typical Junction Capacitance (Note 2) Cj 10 pF RJL 32 K/W Tj, TSTG -50 to +150 C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 150 250 500 nS Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 2 3. Mounted on P.C. Board with 8.0mm land area. * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* M 2712, A IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 25 50 75 100 125 150 1.0 0.1 Tj = 25C IF Pulse Width: 300s 0 175 30 Single Half-Sine-Wave (JEDEC Method) Tj = 150C 20 10 0 1 10 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) IFSM, PEAK FORWARD SURGE CURRENT (A) 10 TL , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve 0.01 0 * * * * * 1000 Tj = 125C 100 10 0.1 0 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve Tj = 25C 1.0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50 NI (Non-inductive) 10 NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0 NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit * 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR 2712, A M DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve product characteristics. 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