Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1805 MHz 18.9 32.0 7.2 --35.0 --19 1840 MHz 19.1 32.0 7.1 --35.0 --18 1880 MHz 19.0 32.0 6.8 --34.0 --11 Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel. For R5 Tape and Reel option, see p. 12. AFT18S230SR3 1805--1880 MHz, 50 W AVG., 28 V NI--780S--6 N.C. 1 6 VBW RFin/VGS 2 5 RFout/VDS 4 VBW N.C. 3 (Top View) Figure 1. Pin Connections Freescale Semiconductor, Inc., 2012--2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT18S230SR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature Range (1,2) TJ --40 to +225 C CW Operation @ TC = 25C when DC current is fed through drain lead, pin 5 Derate above 25C CW 253 1.7 W W/C CW Operation @ TC = 25C when DC current is fed through pin 4 and pin 6 Derate above 25C CW 83 0.41 W W/C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1800 mA, 1840 MHz Case Temperature 92C, 160 W CW(4), 28 Vdc, IDQ = 1800 mA, 1840 MHz RJC C/W 0.41 0.31 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 291 Adc) VGS(th) 1.5 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test) VGS(Q) 2.3 2.8 3.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VDS(on) 0.1 0.24 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 18.0 19.0 21.0 dB Drain Efficiency D 30.5 32.0 -- % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 6.4 6.8 -- dB ACPR -- --34.0 --32.0 dBc IRL -- --11 --7 dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 5. Part internally matched both on input and output. (continued) AFT18S230SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1800 mA, f = 1840 MHz VSWR 10:1 at 32 Vdc, 257 W CW(1) Output Power (3 dB Input Overdrive from 230 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, 1805--1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 207 -- W -- 7.6 -- VBWres -- 90 -- MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg. GF -- 0.35 -- dB Gain Variation over Temperature (--30C to +85C) G -- 0.01 -- dB/C P1dB -- 0.37 -- dB/C AM/PM (Maximum value measured at the P3dB compression point across the 1805--1880 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) (1) 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. AFT18S230SR3 RF Device Data Freescale Semiconductor, Inc. 3 C15 C21 C19 C5 C11 C13 C16 C6 R1 C1 C3 C4 R2 CUT OUT AREA C2 C23 C9 C24 C10 C8 C18 C14 C22 C7 C20 C17 C12 AFT18S230S Rev. 0 Figure 2. AFT18S230SR3 Test Circuit Component Layout Table 5. AFT18S230SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C21, C22, C23 27 pF Chip Capacitors ATC600F270JT250XT ATC C2 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C3, C4 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC C5, C6, C7, C8 27 pF Chip Capacitors ATC100B270JT500XT ATC C9, C24 39 pF Chip Capacitors ATC600F390JT250XT ATC C10 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C11, C12, C13, C14, C15, C16, C17, C18 10 F, 100 V Chip Capacitors C5750X7S2A106M TDK C19, C20 330 F, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay PCB 0.020, r = 3.5 RO4350 Rogers AFT18S230SR3 4 RF Device Data Freescale Semiconductor, Inc. 33 D 19.4 19.2 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 19 18.8 32 31 Gps PARC --31 --4 --32 --8 18.6 --33 18.4 --34 IRL 18.2 --35 ACPR 18 1760 1780 1800 1820 1840 1860 1880 --12 --16 --20 --36 1920 1900 --24 --3 --3.2 --3.4 --3.6 --3.8 PARC (dB) 34 IRL, INPUT RETURN LOSS (dB) 19.6 Gps, POWER GAIN (dB) 35 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1800 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 19.8 ACPR (dBc) 20 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. --10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 1840 MHz IM3--U --30 IM3--L --40 IM5--L --50 --60 IM5--U IM7--L 1 IM7--U 10 100 TWO--TONE SPACING (MHz) 20.5 --1 20 19.5 19 18.5 VDD = 28 Vdc, IDQ = 1800 mA, f = 1840 MHz 18 --1 dB = 20 W --2 D PARC ACPR --3 dB = 45 W 40 --20 35 --25 30 --2 dB = 35 W --3 25 --4 --5 --6 20 Gps Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 25 40 55 70 --30 --35 ACPR (dBc) 0 D DRAIN EFFICIENCY (%) 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --40 15 --45 10 --50 85 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT18S230SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 19 1880 MHz 1880 MHz 1840 MHz Gps 50 --10 40 ACPR VDD = 28 Vdc, IDQ = 1800 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 17 0 1805 MHz 1805 MHz 18 60 1880 MHz 16 30 20 10 1840 MHz --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 20 1840 MHz D D, DRAIN EFFICIENCY (%) 21 --50 1805 MHz 0 300 15 1 10 100 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 23 VDD = 28 Vdc Pin = 0 dBm IDQ = 1800 mA 20 GAIN (dB) 19 10 Gain 0 17 15 --10 IRL 13 11 1500 IRL (dB) 21 30 --20 1600 1700 1800 1900 2000 2100 2200 --30 2300 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT18S230SR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power (1) P1dB P3dB Max Linear Gain (dB) (dBm) (W) D (%) AM/PM () (dBm) (W) D (%) AM/PM () f (MHz) Zsource () Zin () 1805 0.80 - j3.40 1.00 + j3.41 1.09 - j2.10 18.5 54.2 263 57.8 -10 55.1 324 59.9 -16 1840 1.10 - j3.70 1.30 + j3.80 1.20 - j2.30 18.5 54.2 263 57.1 -9 55.2 331 61.1 -16 1880 1.40 - j4.10 1.70 + j4.13 1.11 - j2.30 18.7 54.2 263 57.9 -10 55.0 316 59.5 -16 Zload () (1) Load impedance for optimum P1dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 8. Load Pull Performance -- Maximum P1dB Tuning VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Max Linear Gain (dB) (dBm) 1805 0.80 - j3.40 1.00 + j3.50 1.90 - j0.50 21.7 1840 1.10 - j3.70 1.30 + j3.83 1.90 - j0.90 1880 1.40 - j4.10 1.80 + j4.30 1.50 - j1.10 P3dB (W) D (%) AM/PM () (dBm) (W) D (%) AM/PM () 51.5 141 70.0 -17 53.2 209 71.9 -22 21.4 51.9 155 70.1 -15 52.9 195 72.8 -24 21.3 52.2 166 69.9 -17 52.8 191 71.2 -25 (1) Load impedance for optimum P1dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 9. Load Pull Performance -- Maximum Drain Efficiency Tuning AFT18S230SR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB -- TYPICAL LOAD PULL CONTOURS -- 1840 MHz 0 --0.5 51 --1 52.5 52 --1.5 --2 53 53.5 P E --1 52.5 --3 --2 1.5 2 2.5 3 62 P 54 --3 1 64 --1.5 --2.5 54 0.5 66 70 51.5 E 62 68 IMAGINARY () IMAGINARY () --0.5 --2.5 0 50 50.5 0.5 1 60 58 56 1.5 2 56 2.5 3 REAL () REAL () Figure 10. P1dB Load Pull Output Power Contours (dBm) Figure 11. P1dB Load Pull Efficiency Contours (%) 0 0 22.5 22 --26 --24 --22 --20 --18 --16 --0.5 21.5 E --1 IMAGINARY () IMAGINARY () --0.5 21 --1.5 19 18.5 --2 20.5 E --14 --1.5 --12 --2 20 P --2.5 --1 19.5 --3 --10 P --2.5 --3 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 REAL () REAL () Figure 12. P1dB Load Pull Gain Contours (dB) Figure 13. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 3 Power Gain Drain Efficiency ACPR PARC AFT18S230SR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS -- 1840 MHz 0 --0.5 70 --0.5 52 --1 52.5 E IMAGINARY () IMAGINARY () 0 51 51.5 53 --1.5 --2 54.5 P --2.5 54 53.5 68 --1 E --1.5 --2 P --2.5 55 66 54 56 64 62 60 58 --3 --3 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3 REAL () REAL () Figure 14. P3dB Load Pull Output Power Contours (dBm) Figure 15. P3dB Load Pull Efficiency Contours (%) 0 0 20.5 20 --0.5 19.5 --1 IMAGINARY () IMAGINARY () --0.5 E 19 --1.5 17 16.5 --2 18.5 --1.5 --16 P --14 --3 --3 0.5 1 1.5 2 2.5 3 --20 --2 --2.5 17.5 E --18 18 P --2.5 --30 --28 --26 --24 --22 --1 0.5 1 1.5 2 2.5 REAL () REAL () Figure 16. P3dB Load Pull Gain Contours (dB) Figure 17. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 3 Power Gain Drain Efficiency ACPR PARC AFT18S230SR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT18S230SR3 10 RF Device Data Freescale Semiconductor, Inc. AFT18S230SR3 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel. The R5 tape and reel option for AFT18S230S part will be available for 2 years after release of AFT18S230S. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18S230S in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Aug. 2012 Initial Release of Data Sheet 1 Nov. 2012 Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 12 2 Mar. 2013 Table 1. Maximum Ratings: added CW Operation rating and derate factor if the part is biased through pin 4 and pin 6, p. 2 AFT18S230SR3 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 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