AFT18S230SR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 50 watt RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
Typical Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz 18.9 32.0 7.2 --35.0 -- 1 9
1840 MHz 19.1 32.0 7.1 --35.0 -- 1 8
1880 MHz 19.0 32.0 6.8 --34.0 -- 11
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 12.
Document Number: AFT18S230S
Rev. 2, 3/2013
Freescale Semiconductor
Technical Data
1805--1880 MHz, 50 W AVG., 28 V
AFT18S230SR3
Figure 1. Pin Connections
NI--780S--6
(Top View)
RFin/VGS
VBWN.C.
VBW
16
34
25
N.C.
RFout/VDS
Freescale Semiconductor, Inc., 2012--2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C when DC current is fed through drain lead, pin 5
Derate above 25C
CW 253
1.7
W
W/C
CW Operation @ TC=25C when DC current is fed through pin 4 and pin 6
Derate above 25C
CW 83
0.41
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1800 mA, 1840 MHz
Case Temperature 92C, 160 W CW(4),28Vdc,I
DQ = 1800 mA, 1840 MHz
RJC
0.41
0.31
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 291 Adc)
VGS(th) 1.5 2.0 2.5 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1800 mAdc, Measured in Functional Test)
VGS(Q) 2.3 2.8 3.3 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc)
VDS(on) 0.1 0.24 0.3 Vdc
Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1800 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 18.0 19.0 21.0 dB
Drain Efficiency D30.5 32.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.4 6.8 —dB
Adjacent Channel Power Ratio ACPR —--34.0 --32.0 dBc
Input Return Loss IRL —-- 11 -- 7 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT18S230SR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1800 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 257 W CW(1) Output Power
(3 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1800 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —207 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
—7.6 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —90 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =50WAvg. GF—0.35 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.01 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (1)
P1dB —0.37 —dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
Figure 2. AFT18S230SR3 Test Circuit Component Layout
AFT18S230S
Rev. 0
CUT OUT AREA
R1
C11
C21
C3
C4
R2
C22
C12
C1
C23 C2
C20
C19
C13
C14
C15
C16
C17
C18
C8
C7
C5
C6
C10
C9
C24
Table 5. AFT18S230SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C21, C22, C23 27 pF Chip Capacitors ATC600F270JT250XT ATC
C2 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C3, C4 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC
C5, C6, C7, C8 27 pF Chip Capacitors ATC100B270JT500XT ATC
C9, C24 39 pF Chip Capacitors ATC600F390JT250XT ATC
C10 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C11, C12, C13, C14, C15,
C16, C17, C18
10 F, 100 V Chip Capacitors C5750X7S2A106M TDK
C19, C20 330 F, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp
R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay
PCB 0.020,r=3.5 RO4350 Rogers
AFT18S230SR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1760
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
-- 2 0
-- 4
-- 8
-- 1 2
-- 1 6
18
20
19.8
19.6
-- 3 6
35
34
33
32
-- 3 1
-- 3 2
-- 3 3
-- 3 4
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
1780 1800 1820 1840 1860 1880 1900 1920
31
-- 3 5
-- 2 4
ACPR (dBc)
PARC
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L IM7--U
VDD =28Vdc,P
out = 160 W (PEP), IDQ = 1800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 1840 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
25
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 40 55 85
10
40
35
30
25
20
15
DDRAIN EFFICIENCY (%)
-- 3 d B = 4 5 W
70
D
ACPR
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
21
Gps, POWER GAIN (dB)
20.5
20
19.5
19
18.5
18
Gps
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,I
DQ = 1800 mA, f = 1840 MHz
-- 1 d B = 2 0 W
-- 2 d B = 3 5 W
IRL
PARC (dB)
-- 3 . 8
-- 3
-- 3 . 2
-- 3 . 4
-- 3 . 6
-- 4
-- 6
6
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
15
21
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
20
19
10 100 300
10
-- 6 0
ACPR (dBc)
18
17
16
0
-- 3 0
-- 4 0
-- 5 0
1805 MHz
Figure 7. Broadband Frequency Response
11
23
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1800 mA
19
17
15
GAIN (dB)
21
13
1500 1600 1700 1800 1900 2000 2100 2200 2300
-- 3 0
30
20
10
0
-- 1 0
IRL (dB)
-- 2 0
Gain
IRL
1840 MHz 1880 MHz
1880 MHz
1840 MHz
1805 MHz
1805 MHz
1840 MHz
1880 MHz
VDD =28Vdc,I
DQ = 1800 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
AFT18S230SR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ = 1800 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Output Power
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 0.80 - j3.40 1.00 + j3.41 1.09 - j2.10 18.5 54.2 263 57.8 -10 55.1 324 59.9 -16
1840 1.10 - j3.70 1.30 + j3.80 1.20 - j2.30 18.5 54.2 263 57.1 -9 55.2 331 61.1 -16
1880 1.40 - j4.10 1.70 + j4.13 1.11 - j2.30 18.7 54.2 263 57.9 -10 55.0 316 59.5 -16
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 8. Load Pull Performance — Maximum P1dB Tuning
VDD =28Vdc,I
DQ = 1800 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Drain Efficiency
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 0.80 - j3.40 1.00 + j3.50 1.90 - j0.50 21.7 51.5 141 70.0 -17 53.2 209 71.9 -22
1840 1.10 - j3.70 1.30 + j3.83 1.90 - j0.90 21.4 51.9 155 70.1 -15 52.9 195 72.8 -24
1880 1.40 - j4.10 1.80 + j4.30 1.50 - j1.10 21.3 52.2 166 69.9 -17 52.8 191 71.2 -25
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
8
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
P
E
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
P
E
22
22.5
21
18.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 10. P1dB Load Pull Output Power Contours (dBm)
-- 3
0
REAL ()
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
Figure 11. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 12. P1dB Load Pull Gain Contours (dB)
REAL ()
IMAGINARY ()
Figure 13. P1dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
Power Gain
Drain Efficiency
ACPR
PARC
-- 2
P
E
50.5
51
50
51.5
52
53
53.5
54
52.5
52.5
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
P
E
66
62
54
64
68
70
62
60
58 56
56
21.5
20.5
20
19.5
19
-- 2 6
-- 2 2
-- 2 0
-- 1 8
-- 2 4
-- 1 6
-- 1 4
-- 1 2
-- 1 0
AFT18S230SR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 14. P3dB Load Pull Output Power Contours (dBm)
-- 3
0
REAL ()
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
Figure 15. P3dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 16. P3dB Load Pull Gain Contours (dB)
REAL ()
IMAGINARY ()
Figure 17. P3dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
Power Gain
Drain Efficiency
ACPR
PARC
-- 2
P
51
51.5
53.5
-- 3
0
-- 1
-- 1 . 5
-- 2 . 5
IMAGINARY ()
-- 0 . 5
1 1.5 2 2.50.5 3
-- 2
52
52.5
53
54
54.5
E
70
P
E
68
66
64
62
60
58
56
54
P
20.5 20
19.5
E
19
18.5
18
17.5
17
16.5
P
-- 3 0
-- 2 2
E
-- 2 8
-- 2 6
-- 2 4 -- 2 0
-- 1 8
-- 1 6
-- 1 4
55
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
PACKAGE DIMENSIONS
AFT18S230SR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230SR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.
The R5 tape and reel option for AFT18S230S part will be available for 2 years after release of AFT18S230S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18S230S in the R3
tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Aug. 2012 Initial Release of Data Sheet
1Nov. 2012 Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 12
2Mar. 2013 Table 1. Maximum Ratings: added CW Operation rating and derate factor if the part is biased through pin 4
and pin 6, p. 2
AFT18S230SR3
13
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
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are trademarks of Freescale Semiconductor, Inc. All other product or service names
are the property of their respective owners.
E2012--2013 Freescale Semiconductor, Inc.
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Document Number: AFT18S230S
Rev. 2, 3/2013
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