SMALL SIGNAL DIODE
VOLTAGE RANGE 60 Volts
RECTRON
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
*
*Guard Ring Construction for Transient Protection
Negligible Reverse Recovery Time
Low Forward Voltage Drop
*
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.01 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SD101AW
SOD-123
MAXIMUM RATINGS
(@ TA=25
OC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(@TA=25
OC unless otherwise noted)
Dimensions in inches and (millimeters)
2006-3
RATINGS
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Reverse Breakdown Voltage(IR=10µA)
Non-Repetitive Peak Forward Surge Current @t<1.0s
@t=10µs
Forward Continuous Current
Maximum Power Dissipation
Operating and Storage Temperature Range
SYMBOL SD101AW
Volts
Volts
60
50
2.0
15
400
2.0
-65 to + 125
Amps
mW
pF
1.0 nS
OC
UNITS
Typical Thermal Resistance 300 OC/W
Maximum Working Peak reverse Voltage Volts60
Maximum Repetitive Peak Reverse Voltage
42
CHARACTERISTICS
Maximum Instantaneous Reverse Current
VF
SYMBOL
IR
UNITS
Maximum Instantaneous Forward Voltage
Volts
@V
R
=50V
@IF=1.0mA
@IF=15mA
0.41
0.2
1.00
uAmps
mAmps
mAmps
SD101AW
REF .020(0.50)
.026(.65)
.018(.45)
.152(3.85)
.140(3.55)
.067(1.70)
.059(1.50)
.110(2.80)
.102(2.60)
.006(.15)
.003(.08)
.049(1.25)
.041(1.05)
.004(.10)
.000(.00)
VRMS
V(BR)R
IFSM
IFM
PD
TJ,TSTG
VR
CT
Trr
RΘJA
VRWM
VRRM
Typical Junction Capacitance(VR=0V,f=1MHz)
Typical Reverse Recovery Time(IF=IR=5mA,Irr=0.1XIR,RL=100)
RECTRON
VF, FORWARD VOLTAGE(V)
IF, FORWARD CURRENT(A)IR, REVERSE CURRENT(µA)
TA, AMBIENT TEMPERATURE(OC)
0 0.5
0.01
0.1
1.0
10
PD,POWER DISSIPATION(mW)
0
100
200
500
400
300
1.01501251007550250
RATING AND CHARACTERISTICS CURVES ( SD101AW )
Figure1 Power Derating Curve Figure2 Typical Foward Characteristics
VR, REVERSE VOLTAGE(V)
CT,TOTAL CAPACITANCE(pF)
0
1
2
20 30 40 50100 0.0001
0.001
0.01
1
0.1
10
20 4030 50 60100
Figure3 Typical Total Capacitance vs Reverse Voltage
VR, REVERSE VOLTAGE(V)
Figure4 Typical Reverse characteristics
TJ = 25OC
f = 1MHz TA = 125OC
TA = 75OC
TA = 25OC
TA = 0OC
TA = -65OC
RECTRON
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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