Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom DC-collector current TC = 80C TC = 25 C IC,nom. 800 A IC 1200 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 1600 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 6,9 kW VGES +/- 20V V IF 800 A IFRM 1600 A I2t 185.000 A2s VISOL 2.500 V Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. - 3,00 - V - 3,60 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannunggate threshold voltage IC = 32 mA, VCE = VGE, Tvj = 25C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 52 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - t.b.d. - nF Gateladung gate charge VGE = -15V ... + 15V, VCE = 600V QG - 8,4 - C VCE = 1200V, VGE = 0V, Tvj = 25C ICES - t.b.d. - A - t.b.d. - mA - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE sat max. IC = 800 A, VGE = 15V, Tvj = 25C IC = 800 A, VGE = 15V, Tvj = 125C VCE = 1200V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: R. Jorke date of publication : 2000-06-14 approved by: Jens Thurau revision: 1 1 (9) http://store.iiic.cc/ IGES FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Charakteristische Werte / Characteristic values min. typ. max. - 100 - ns - 125 - ns - 90 - ns - 100 - ns - 530 - ns - 590 - ns - 60 - ns - 70 - ns Eon - 76 - mWs Eoff - 64 - mWs ISC - 6000 - A LsCE - 12 - nH RCC'+EE' - t.b.d. - m min. typ. max. - 2,00 - V - 1,70 - V - 540 - A - 900 - A - 60 - As - 160 - As - 32 - mWs - 76 - mWs Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C td,on VGE = 15V, RG = 1,3 , Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C tr VGE = 15V, RG = 1,3 , Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C td,off VGE = 15V, RG = 1,3 , Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C tf VGE = 15V, RG = 1,3 , Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 800 A, VCC = 600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 800 A, VCC = 600V, VGE = 15V Kurzschluverhalten SC Data RG = 1,3 , Tvj = 125C, LS = 60nH RG = 1,3 , Tvj = 125C, LS = 60nH tP 10sec, VGE 15V TVj125C, VCC= 900V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 800 A, VGE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 800 A, - diF/dt = 8200 A/sec VF IF = 800 A, VGE = 0V, Tvj = 125C VR = 600V, VGE = -10V, Tvj = 25C IRM VR = 600V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800 A, - diF/dt = 8200 A/sec VR = 600V, VGE = -10V, Tvj = 25C Qr VR = 600V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 800 A, - diF/dt = 8200 A/sec VR = 600V, VGE = -10V, Tvj = 25C VR = 600V, VGE = -10V, Tvj = 125C 2 (9) http://store.iiic.cc/ Erec FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,018 K/W - - 0,027 K/W RthCK - 0,008 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 150 C Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Cu Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32,2 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index > 400 Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M4 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque M1 4,25 M2 1,7 2,3 Nm 8 10,00 Nm terminals M8 Gewicht weight G 5,75 Nm 1000 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 g Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1600 1400 T = 25C T = 125C 1200 IC [A] 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 5,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125C 1600 1400 VGE = 8V VGE = 9V 1200 VGE = 10V VGE = 12V IC [A] 1000 VGE = 15V VGE = 20V 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 VCE [V] 4 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1600 1400 T = 25C T = 125C 1200 IC [A] 1000 800 600 400 200 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 1600 Tj = 25C 1400 Tj = 125C 1200 IF [A] 1000 800 600 400 200 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] 5 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Schaltverluste (typisch) Switching losses (typical) E on = f (IC) , E off = f (IC) , E rec = f (IC) RG,on = 1,3 , RG,off = 1,3 , VCE = 600V, Tj = 125C 250,0 Eon Eoff E [mJ] 200,0 Erec 150,0 100,0 50,0 0,0 0 200 400 600 800 1000 1200 1400 1600 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800 A , VCE = 600V , Tj = 125C 450 400 Eon Eoff 350 Erec E [mJ] 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 RG [] 6 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) RG,off = 1,3 , Tvj= 125C 1800 IC [A] 1600 1400 1200 1000 800 IC,Modul IC,Chip 600 400 200 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 0,1 Zth:IGBT Zth:Diode ZthJC [K / W] 0,01 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 3,85 5,68 6,15 2,32 0,0064 0,0493 0,0916 1,5237 5,78 8,52 9,22 3,48 0,0064 0,0493 0,0916 1,5237 8 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Gehausemae / Schaltbild Package outline / Circuit diagram 9 (9) http://store.iiic.cc/ FZ800R12KS4, preliminary.xls 15.06.00