Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030L
30V N-Channel Power MOSFET
6030L.2001.05.0.91
General Description
Utilizing Analogic Tech’s state-of-the-art
TrenchDMOSâprocess, the AHK6030L sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and RDS(ON) have been optimized and
package inductance minimized to provide high
efficiency for DC-DC converters.
Applications
•=DC-DC converters for CPU’s
•=High Current Load Switch
Features
•=VDS(MAX) = 30V
•=ID(MAX)
(a) =44A@25°C
•=IAPP(MAX) = 17A in typical computer application
•=Low Gate Charge
•=Low RDS(ON):
13.5 mΩ=(max), 9.5 mΩ=(typ) @VGS = 10V
20 mΩ=(max), 14 mΩ=(typ) @VGS =4.5V
DPAK-L Package DPAK Package
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol Description Value Units
VDS Drain-Source Voltage 30
VGS Gate-Source Voltage ±20 V
IDContinuous Drain Current @ TJ=150°C(a) ±44
IDM Pulsed Drain Current (a) ±52
ISContinuous Source Current (Source-Drain Diode) (a) 23
A
TA=25°C39
PDMaximum Power Dissipation (a)
TA=70°C25 W
TJ,T
STG Operating Junction and Storage Temperature Range -55 to 150 °C
Thermal Resistance
RθJA Maximum Junction-to-Ambient (a) 96 °C/W
RθJC Maximum Junction-to-Case(a) 3.2 °C/W
GS
Drain-Connected Tab
GS
Drain-Connected Tab
PWMSwitchTM
Preliminary Information
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030L
30V N-Channel Power MOSFET
6030L.2001.05.0.91
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDS
Drain-Source Breakdown
Voltage VGS=0V, ID=250µA30 V
VGS=10V, ID=10A 9.5 13.5
RDS(ON) Drain-Source ON-Resistance VGS=4.5V, ID=5A 14 20 mΩ
ID(ON) On-State Drain Current VGS=10V ,VDS=5V (Pulsed) 56 A
VGS(th) Gate Threshold Voltage VGS=VDS,I
D=250µA1.0 V
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA
VGS=0V,VDS=30V 1
IDSS Drain Source Leakage Current VGS=0V,VDS=30V, TA=70°C25
µA
gfs Forward Transconductance VDS=15V, ID=10A 19 S
Dynamic Characteristics
QGTotal Gate Charge 36 52 nC
QGS Gate-Source Charge 7 nC
QGD Gate-Drain Charge
VDS=15V, ID=15A, VGS=10V
6nC
tD(ON) Turn-ON Delay 17 30 ns
tRTurn-ON Rise Time 11 20 ns
tD(OFF) Turn-OFF Delay 48 80 ns
tFTurn-OFF Fall Time
VDD=15V, VGS=10V, ID=15A,
RG=6Ω
36 64 ns
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage VGS=0, IS=28A 1 1.5 V
ISContinuous Diode Current 23 A
Notes:
(a) Based on thermal dissipation from junction to case. RθJC +R
θCA =R
θJA where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design, however RθCA is determined by the PCB
design. Package current is limited to 26A DC.
(b) With minimum copper pads on 1 x 1 inch FR4 board.
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030L
30V N-Channel Power MOSFET
6030L.2001.05.0.91
Typical Characteristics
Normalized On-Resistance vs.
Drain Current
0
0.5
1
1.5
2
2.5
3
0.00 10.00 20.00 30.00
I
D
(A)
Normalized R
DS(ON)
V
GS
=3.5V V
GS
=4V
V
GS
=5V V
GS
=6V V
GS
=10V
V
GS
=4.5V
On-Resistance vs. Gate to Source Voltage
0
10
20
30
40
02 46 810
V
GS
(V)
R
DS(ON)
(mΩ)
10A 20A
30A
Source-Drain Diode Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1 1.2
V
SD
(V)
I
S
(A)
Output Characteristics
0.00
15.00
30.00
45.00
60.00
0.00 1.00 2.00 3.00 4.00 5.00
V
DS
(V)
I
DS
(V)
10V
6V
5V
4.5V
4V
3V
Transfer Characteristics
0
10
20
30
40
50
60
012345
V
GS
(V)
I
D
(A)
V
D
=V
G
Gate Charge
0
2
4
6
8
10
0 10203040
Q
g
, Charge (nC)
V
GS
(V)
V
D
=15V
R
D
=1.2Ω
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689 6030L.2001.04.0.9
AHK6030L
30V N-Channel Power MOSFET
Ordering Information
Part Number
Package Marking Bulk MPQ Tape and Reel MPQ
TO-252 (DPAK) 6030L N/A N/A AHK6030LINY-T1 2100
Package Information
TO-252 (DPAK)
0.5
0~0.2
2.3
6.5
5.7
5.5
7.2
93”
97”
2.5
0.7
1.4
0.5
4.6
C0.5
(2X)
0.6
(3X)
(0.9)
