TECHNICAL DATA 2N869AJAN, JTX 2N4453JAN, JTX Processed per MIL-S-19500/283 PNP Silicon Small-Signal Transistor designed for hagh-speed switching apphcabons CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 14779 2N869AJAN Device is on Product Discontinuance Notice MAXIMUM RATINGS Rating Symbo aha Unit Calector-E meter Volbage Vico 18 Woe Gollector-Base Vottape Vico 25 Woke Ennger-Bawe voltage VERO $6 Vole Cofectar Gurert Contrunut le aon rll Tot! Ciesce Desupation ai Pye ec PNBEIA 45 rw wads eta z mane Oersie above 25C ccueeen in CASE 22-03, STYLE 1 TO-206.44 (TO-18) Operating Junchon and T 3, Tikig 45 19 200 SNBEoA hrerage Temorature Range ELECTRICAL CHARACTERISTICS iT, = 25C unter: otherness noted | Characteristic | Symbot | min | Max Unit OFF CHARACTERISTICS Colecte-Ervtet Breakdown dottagpal 1! ViERCEO 48 Viele fig = 10 made. ig = 0) Collector Emitter Bremadewn Voltage! '! VieRPCES 2 - Wit: ike, = 10 pA, Ve = Di) Collecte:-Base Breakcown Vonage {A pCBO # = Vee | fic = 10 Ade, lig = Enutter-Gase Graakdown Voltage Viemeao a0 = Vine the = 10 pace, I> = Op Collector Cuto Cure Ices pAde Woe = 15 Vie. Ve = 0) nor Woe* 19 We. Vge = 0, Ta = 150C) = 0 CASE 26-01, STYLE 1 Ener Cautafl Guerern lea = on wade Sa . (Wee = 25 Wor, Ip = 0) (Peet ule ah PR io TD oo Dy pe iid peatELECTRICAL CHARACTERISTICS continued (Ts ~ 25C uniess otherese noted.) Characteristic | Symbai DE Current Gan (ig = 10 mAde, Wop = 0.3 Vide! fle = 1O-mAde, Woe = 5.0 Vac! ile = 30 mAge, Vicg = 0.5 Vac) the = 100 made Vice = 1.0 Weed! he: = 20 made, Vicg = 0.5 Wile, Ty = 8550) rE BESS _ 4 Colinetor -Emite: Saiurabor Voltage (ig = 10 middie, ig = 1.0 magic) fig = 100 mack. ip = 1) Adc VOEtsat) 0.15 O58 Base Erte Saharan Vollage fic = 10 made. ig = 1.0 mAdc) Cee TOO rvAole, gy = 10 Ade) VBE isat) Wee SMALL-HIGNAL CHARACTERISTICS Culpa Capacitance (Meg = 500 Vide. ie 0, fe 0.1 1 1.0 Mi) 4 put Canactance Wop = 0.8 Vide, le = 0, fe 01 to 1.0 Me) 0 Qonnent Gai fig 1G made. Vig = 5.0 Voc) (ke = 5.0 Age, Vice = 0 Video #| | Smail-Sgnal Curren Tranwler Fano, Magrqude le = WO made, Veg = 15 Wale, T= 100 MHz) 1 Noinw Figure fig = 0.5 mAge. Vig = 5.0 Vie. Ag = 1.0 kote fe TOMMz, BW < 200 kHz AF ao SWITCHING CHARACTERISTICS |See Figure 36) Wee = 2.0 Wie, ig 30 mAde, fa = 1-5 made) Turn Tine Nani Tune Time tty g\8 ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vcg = 12 Vde Py = 380 mW 269A, 200 mW 2N4454 tiitial and End Point Limite Cofactor Cutoft Current (Woe = 15 Vee 10 zs (0C Current Gann (ic = 10 MAGS, Veg = 4.0 Voc) ab 120 Bette rom PreBurnin Measured Values Dette Cotector Cutott Current 21h arzh. wherever s grater sof inital Value racic: Betta Gf Conant Gain Sof Inmial Value (") mn Pcie Ope FS ey pa, ty Cece | ee 7