3-1
Product Description
Ordering In formation
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
4GND
3GND
2GND
1RF IN 8 RF OUT
7 GND
6 GND
5 GND
RF2312
LINEAR GENERAL PURPOSE AMPLIFIER
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
The RF2312 is a general pur pose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000 MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operat e as specified.
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
• +20dBm Output Power
• Single 5V to 12V Positive Power Supply
RF2312 Linear General Purpose Amplifier
RF2312 PCBA Fully Assembled Evaluation Board - 75Ω
RF2312 PCBA Fully Assembled Evaluation Board - 50Ω
0
Rev C6 051025
0.248
0.232
0.200
0.192
0.160
0.152 0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Packag e Style: SOIC- 8
9
RoHS Compliant & Pb-Free Product
3-2
RF2312
Rev C6 051025
Absolute Maximum Ratings
Parameter Rating Unit
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (50Ω)T=25°C, VCC=9V, Freq=900MHz,
RC=30Ω, 50Ω System, PIN=-4dBm
Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 15.1 dB
Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30 to +70 °C
4.2 4.8 dB From 300MHz to 1000MHz, -30 to +70 °C
Input VSWR 1.7:1 2:1 Appropriate values for the DC bloc king
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.4:1 2:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3+40 +42 dBm At 100MHz
Output IP3+33 +36 dBm At 500MHz
Output IP3+30 +33 dBm At 900MHz
Output P1dB +21 +22 dBm At 100MHz
Output P1dB +20 +21 dBm At 500MHz
Output P1dB +17 +18.5 dBm At 900MHz
Saturated Output Power +23 dBm At 100M Hz
Saturated Output Power +22.5 dBm At 500MHz
Saturated Output Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB
Thermal
ThetaJC 114.9 °C/W ICC=100 mA, PDISS =0.555W, TAMB=85°C,
TJ=149°C
No RF Input/Output
Mean Time To Failure 2170 years TAMB=+85°C
ThetaJC 114.05 °C/W ICC=120 mA, PDISS =0.702W, TAMB=85°C,
TJ=165°C
No RF Input/Output
Mean Time To Failure 2170 years TAMB=+85°C
Power Supply
Device Voltage (VD) 5.5 V On pin 8, ICC=100mA
5.0 V On pin 8, ICC=40mA
Operating Current Range 40 100 120 mA VCC=9.0V, RC=30Ω
Caution! ESD sensitive device.
RF Micro Devices belie v es the furnished information is correct and accurate
at the tim e of this print ing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume respon sibility for the use of the described product(s ).
3-3
RF2312
Rev C6 051025
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (75Ω)T=25°C, VCC=9V, Freq=900MHz,
RC=30Ω, 75Ω System
Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 16 dB
Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30°C to +70°C.
4.2 4.8 dB From 300MHz to 1000MHz, -30°C to +70°C.
Input VSWR 1.3:1 2:1 From 50MHz to 900MHz, -30°C to +70°C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.2:1 1.75:1 From 50MHz to 300MHz, -30°C to +70°C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
1.4:1 2:1 From 300MHz to 500MHz, -30°C to + 70°C.
1.5:1 2:1 From 500MHz to 900MHz, -30°C to +70°C.
Output IP3+36 +38 dBm At 100MHz
Output IP3+33 +36 dBm At 500MHz
Output IP3+28 +30 dBm At 900MHz
Output P1dB +21 +22 dBm At 100MHz
Output P1dB +20 +21 dBm At 500MHz
Output P1dB +17 +18.5 dB m At 900MHz
Saturated Output Power +23 dBm At 100MHz
Saturated Output Power +22.5 dBm At 500MHz
Saturated Output Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB
77 Channels 77 Channels to 550MHz at 10dBmV,
33 channels to 760MHz at 0dBmV flat at
DUT input
CSO >86 dBc 61.25MHz
>86 dBc 83.25MHz
76 dBc 193.25MHz
72 dBc 313.2625MHz
64 dBc 547.25MHz
CTB >86 dBc 61.25MHz
>86 dBc 83.25MHz
86 dBc 193.25MHz
84 dBc 313.2625MHz
83 dBc 547.25MHz
CNR 65 66 dB
110 Channels 110 Channels, 10dBmV/channel at input
CSO >86 dBc 61.25MHz
>86 dBc 83.25MHz
76 dBc 193.25MHz
70 dBc 313.2625MHz
64 dBc 547.25MHz
CTB 84 dBc 61.25MHz
86 dBc 83.25MHz
85 dBc 193.25MHz
81 dBc 313.2625MHz
80 dBc 547.25MHz
Cross Modulation 77 dBc 61.25MHz
74 dBc 445.25MHz
CNR 65 66 dB
3-4
RF2312
Rev C6 051025
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (75Ω Push-Pull) T=25°C, VCC=9V or 24V, 75Ω System,
RFIN=-10dBm
Frequency Range DC to 150 MHz
Gain 15 dB
Noise Figure 5.0 dB From 5MHz to 150MHz, -30°C to +70°C.
Input VSWR 1.1:1
Output VSWR 1.2:1
Output IP2+71 dBm At 10MHz
+72 dBm At 30MHz
+74 dBm At 50MHz
Output IP3+40 dBm At 10MHz
+40 dBm At 30MHz
+40 dBm At 50MHz
Second Harmonic -73 dBc At 10MHz
-65 dBc At 30MHz
-65 dBc At 50MHz
3-5
RF2312
Rev C6 051025
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedbac k, and not using a DC-
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1kΩ
resistor to groun d on this p in redu ces the b ias level, wh ich may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias lev el. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC-cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. Each ground pin should
have a via to the ground plane.
3GND
Same as pin 2.
4GND
Same as pin 2.
5GND
Same as pin 2.
6GND
Same as pin 2.
7GND
Same as pin 2.
8RF OUT
RF output and bias pin. Because DC is present on this pin, a DC-block-
ing capacitor, suitab le for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor RC is 30Ω (0.5W) for VCC=9V and
21Ω for VCC=8V. The DC voltage on this pin is typically 6.0V with a
current of 100mA. In lower power applications the value of RC can be
increased to lower the current and VD on this pin.
RF OUT
RF IN
3-6
RF2312
Rev C6 051025
Application Schematic
5MHz to 50MHz Rev e rse Path
Application Schematic
10dB Gain
1
2
3
4
8
7
6
5
RF OUTRF IN
VCC
NOTE 1:
Optional resistor RS can be used to maintain the correct bias level at higher supply voltages. This is used to
increase output capability or linearity for signals with high crest factors.
10 nF
10 nF
10 μH
30 Ω100 nF 100 nF
RS
1 - 2 kΩ
1
2
3
4
8
7
6
5
RF OUTRF IN
R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2
and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and
R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating
frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness.
VCC= 9 - 12 V
C1
220 pF R5
1 - 2 kΩ
C3
10 nF R2
470 Ω
R6
7.5 Ω
R7
7.5 Ω
C2
220 pF
L1
330 nH
R1 = 21 - 30 Ω
C4
TBD C5
TBD
3-7
RF2312
Rev C6 051025
Application Schematic
Push-Pull Standard Voltage
1
2
3
4
8
7
6
5
U1
RF2312
1
2
3
4
8
7
6
5
U2
RF2312
616PT-
1030
F EDGE
120 Ω120 Ω120 Ω120 Ω0.1 uF
V
616PT-
1030 F EDGE
P1
1
2
3
CON3
GND
V
3-8
RF2312
Rev C6 051025
Application Schematic
Push-Pull 24V
1
2
3
4
8
7
6
5
U1
RF2312
1
2
3
4
8
7
6
5
U2
RF2312
2400 Ω
0.1 uF
10 nF
616PT-
1030
10 nF
F EDGE
2400 Ω
10 uH
10 nF
616PT-
1030 F EDGE
10 nF
120 Ω120 Ω120 Ω120 Ω
10 uH
120 Ω120 Ω120 Ω120 Ω0.1 uF
P1
1
2
3
CON3
GND
47 nF
63 nF
3-9
RF2312
Rev C6 051025
Evaluation Board Schematic - 50Ω
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Schematic - 75Ω
NOTE: For 5V applications, R1 to R4 may be removed (shorted). This will result in degraded distortion performance.
1
2
3
4
8
7
6
5
C1
220 pF
microstrip
J1
SMA C3
220 pF microstrip J2
SM
A
L1
330 nH
R1
120
Ω
C2
100 nF C4
100 nF
OUT
R2
120
Ω
R3
120
Ω
R4
120
Ω
P1-1
2312400A
P1 H3M
1
2
3
P1-1 VCC (9 V)
GND
NC
1
2
3
4
8
7
6
5
C1
1 nF
microstrip
J1
F CONN
(75
Ω
)C3
1 nF
microstrip J2
F CON
N
(75
Ω
)
L1
1000 nH
R4
120
Ω
C3
0.1 uF
OUT
R1
120
Ω
R2
120
Ω
R3
120
Ω
P1-1
2312401-
P1
1
2
3
CON3
GND
NC
P1-1 VCC
3-10
RF2312
Rev C6 051025
Evalua tion Board Layout - 50Ω
2.02” x 2.02”
Board Thickness 0.031”, Board Material FR-4
3-11
RF2312
Rev C6 051025
Evaluation Board Layo ut - 75Ω
Standard Voltage
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
3-12
RF2312
Rev C6 051025
Evalua tion Board Layout - 75Ω
Push-Pull, Standard Voltage
1.70” x 1.50”
Board Thickness 0.062”, Board Material FR-4
3-13
RF2312
Rev C6 051025
Evaluation Board Layo ut - 75Ω
Push-Pull, 24V
1.70” x 1.50”
Board Thickness 0.062”, Board Material FR-4
3-14
RF2312
Rev C6 051025
POUT versus PIN
500 MHz
0.0
5.0
10.0
15.0
20.0
-15.0 -10.0 -5.0 0.0 5.0
PIN (dBm)
POUT (dBm)
Output Third Order Intercept Point (OIP3) versus PIN
500 MHz
0.0
10.0
20.0
30.0
40.0
50.0
-15.0 -10.0 -5.0 0.0 5.0
PIN (dBm)
Output IP3 (dBm)
Output P1dB versus Frequency
0.0
5.0
10.0
15.0
20.0
25.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Fr equency (MHz)
Output P1dB (dBm)
Vcc=5.0V, Rc=22
Vcc=6.0V, Rc=22
Vcc=7.0V, Rc=22
Vcc=8.0V, Rc=22
Vcc=9.0V, Rc=30
Vcc=11. 0V, Rc= 30 , Rs=1k
IM3 Products versus POUT
500/501 MHz
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
5.0 10.0 15.0 20.0 25.0
POUT (dBc)
IM3 Products (-dBc)
ICC versus Device Voltage
(Pin 8)
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Devi ce Voltage (V)
ICC (mA)
Rs=1k
No Rs
3-15
RF2312
Rev C6 051025
CH1 S 11 1 U FS
START .300 000 MHz STOP 3 000.000 000 MHz
C2
1
2
3
4
4_: 53.809 -24.182 3.464
p
F
1 900.000 000 MHz
1_: 97.188
-1.5742
50 MHz
2_: 93.512
-13.215
450 MHz
3_: 84.16
-22.945
900 MHz
CH1 S 21 lo
g
MAG 10 dB/ REF 0 dB
START .300 000 MHz STOP 3 000.000 000 MHz
C2
1 2 3
4
4_: 14.454 dB
1 900.000 000 MHz
1_: 15.372 dB
50 MHz
2_: 15.307 dB
450 MHz
3_: 15.184 dB
900 MHz
CH1 S 22 1 U FS
START .300 000 MHz STOP 3 000.000 000 MHz
C2
1
2
3
4
4_: 19.802 -16.739 5.0042
p
F
1 900.000 000 MHz
1_: 115.2
-6.6211
50 MHz
2_: 87.551
-42.652
450 MHz
3_: 52.43
-44.855
900 MHz
CH1 S12 lo
g
MAG 10 dB / REF 0 dB
START .300 000 MHz STOP 3 000.000 000 M Hz
C2
1 2 3
4
4_:-17.966 dB
1 900.000 000 MHz
1_:-19.908 dB
50 MHz
2_:-19.87 dB
450 MHz
3_:-19.554 dB
900 MHz
3-16
RF2312
Rev C6 051025
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms, ICC = 110 mA, Temp = 25°C
Swp Max
2.001GHz
Swp Min
0.001GHz
S[2,2]
S[1,1]
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms, ICC = 100 mA, Temp = 25°C
Swp Max
2.001GHz
Swp Min
0.001GHz
S[2,2]
S[1,1]
