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QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
QSD123, QSD124 Rev. 1.3
November 2016
QSD123, QSD124
Plastic Silicon Infrared Phototransistor
Features
■NPN Silicon Phototransistor
■Package Type: T-1 3/4
■Matched Emitter: QED12X/QED22X/QED23X
■Narrow Reception Angle: 24°C
■Daylight Filter
■Package Material and Color: Black Epoxy
■High Sensitivity
Description
The QSD123/124 is a phototransistor encapsulated in
an infrared transparent, black T-1 3/4 package.
Package Dimensions
0.195 (4.95)
0.040 (1.02)
NOM
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
COLLECTOR
0.800 (20.3)
MIN
0.100 (2.54) NOM
0.500 (1.25)
EMITTER
COLLECTOR
EMITTER
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
Schematic
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©2012 Fairchild Semiconductor Corporation
QSD123, QSD124 Rev. 1.32
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. λ = 880nm, AlGaAs.
Electrical/Optical Characteristics (TA = 25°C)
Symbol Parameter Rating Unit
TOPR Operating Temperature -40 to +100 °C
TSTG Storage Temperature -40 to +100 °C
TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C
TSOL-F Soldering Temperature (Flow)(2,3) 260 for 10 sec °C
VCE Collector-Emitter Voltage 30 V
VEC Emitter-Collector Voltage 5 V
PDPower Dissipation(1) 100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λPS Peak Sensitivity Wavelength 880 nm
ΘReception Angle ±12 °
ICEO Collector-Emitter Dark Current VCE = 10V, Ee = 0 100 nA
BVCEO Collector-Emitter Breakdown IC = 1mA 30 V
BVECO Emitter-Collector Breakdown IE = 100µA 5 V
IC(ON) On-State Collector Current(5)
QSD123
QSD124
Ee = 0.5mW/cm2, VCE = 5V
4
6
mA
mA
VCE(SAT) Saturation Voltage(5) Ee = 0.5mW/cm2, IC = 0.5mA 0.4 V
trRise Time VCC = 5V, RL = 100Ω, IC = 0.2mA 7 µs
tfFall Time 7 µs
29
16
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©2012 Fairchild Semiconductor Corporation
QSD123, QSD124 Rev. 1.33
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
Typical Performance Characteristics
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0 0.2 0.4 0.6 0.8 1.00.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Figure 4. Light Current vs. Collector - Emitter Voltage
VCE - Collector-Emitter Voltage (V)
0.1 1 1 0
I
L
- Normalized Light Current
10-3
10-2
10-1
100
101
Ee - Radiant Intensity (mW/cm 2)
0.0 0.2 0.4 0.6 0.8 1.0
I
C(ON)
- Light Current (mA)
0.1
1
10
100
Normalized to:
VCE = 5V
Ie = 0.5mW/cm
TA= 25oC
2
Ie=0.1mW/cm2
Ie=0.2mW/cm 2
Ie=0.5mW/cm2
Ie=1mW/cm 2
TA- Ambient Temperature (oC)
-40 -20 0 20 40 60 80 100
I
CEO
- Normalized Dark Current
10-1
100
101
102
103
104
VCE=25V
VCE=10V
Normalized to:
VCE = 25V
TA= 25o
C
VCE - Collector-Emitter Voltage (V)
0 5 10 15 20 25 30
I
CEO
- Dark Current (nA)
10-3
10-2
10-1
100
101
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Rev. I77
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