J/SST174 Series
Siliconix
P-37653—Rev. D, 25-Jul-94 1
P-Channel JFETs
J174 SST174
J175 SST175
J176 SST176
J177 SST177
Product Summary
Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns)
J/SST174 5 to 10 85 –10 25
J/SST175 3 to 6 125 –10 25
J/SST176 1 to 4 250 –10 25
J/SST177 0.8 to 2.25 300 –10 25
Features Benefits Applications
Low On-Resistance: J174 <85
Fast Switching—tON: 25 ns
Low Leakage: –10 pA
Low Capacitance: 5 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Description
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching.
This series simplifies series-shunt switching applications
when combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a
low-cost option, while the TO-236 (SOT-23) package
provides surface-mount capability. Both the J and SST
series are available in tape-and-reel for automated assembly
(see Packaging Information).
D
S
G
TO-236
(SOT-23)
Top V iew
2
3
1
TO-226AA
(TO-92)
Top View
D
S
G
1
2
3
*Marking Code for TO-236
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
J174
J175
J176
J177
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70257.
Applications information may also be obtained via FaxBack, request document #70597.
J/SST174 Series
2 Siliconix
P-37653—Rev. D, 25-Jul-94
Absolute Maximum Ratings
Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
Specificationsa for J/SST174 and J/SST175
Limits
J/SST174 J/SST175
Parameter Symbol Test Conditions TypbMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30
V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 5 10 3 6
V
Saturation Drain CurrentcIDSS VDS = –15 V, VGS = 0 V –20 –135 –7 –70 mA
Gate Reverse Current
IGSS
VGS = 20 V, VDS = 0 V 0.01 1 1
G
a
t
e
R
everse
C
urren
t
I
GSS TA = 125_C 5
Gate Operating Current IGVDG = –15 V, ID = –1 mA 0.01 nA
Drain Cutoff Current
ID(off)
VDS = –15 V, VGS = 10 V –0.01 –1 –1
D
ra
i
n
C
u
t
o
ff
C
urren
t
I
D(off) TA = 125_C–5
Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 85 125 W
Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = –15 V, ID = –1 mA
f1kH
4.5 mS
Common-Source
Output Conductance gos
S
f = 1 kHz 20 mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 85 125 W
Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20
Common-Source
Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V
f = 1 MHz 5pF
Equivalent Input Noise Voltage enVDG = –10 V, ID = –1 mA
f = 1 kHz 20 nV⁄
√Hz
Switching
Turn
-
On Time
td(on) 10
Turn
-
On
Time
trVGS(L) = 0 V, VGS(H) = 10 V
S S it hi Ci it
15
ns
Turn
-
Off Time
td(off)
GS( ) GS( )
See Switching Circuit 10
ns
Turn
-
Off
Time
tf20
Notes
a. TA = 25_C unless otherwise noted. PSCIA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW 300 ms duty cycle 3%.
J/SST174 Series
Siliconix
P-37653—Rev. D, 25-Jul-94 3
Specificationsa for J/SST176 and J/SST177
Limits
J/SST176 J/SST177
Parameter Symbol Test Conditions TypbMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30
V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 1 4 0.8 2.25
V
Saturation Drain CurrentcIDSS VDS = –15 V, VGS = 0 V –2 –35 –1.5 –20 mA
Gate Reverse Current
IGSS
VGS = 20 V, VDS = 0 V 0.01 1 1
G
a
t
e
R
everse
C
urren
t
I
GSS TA = 125_C 5
Gate Operating Current IGVDG = –15 V, ID = –1 mA 0.01 nA
Drain Cutoff Current
ID(off)
VDS = –15 V, VGS = 10 V –0.01 –1 –1
D
ra
i
n
C
u
t
o
ff
C
urren
t
I
D(off) TA = 125_C–5
Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 250 300 W
Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = –15 V, ID = –1 mA
f
=
1 kHz
4.5 mS
Common-Source Output Conductance gos
f
=
1
kHz
20 mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 250 300 W
Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20
Common-Source
Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V
f = 1 MHz 5pF
Equivalent Input Noise Voltage enVDG = –10 V, ID = –1 mA
f = 1 kHz 20 nV⁄
√Hz
Switching
Turn
-
On Time
td(on) 10
T
urn-
O
n
Ti
me trVGS(L) = 0 V, VGS(H) = 10 V
S S it hi Ci it
15
ns
Turn
-
Off Time
td(off)
GS( ) GS( )
See Switching Circuit 10
ns
Turn
-
Off
Time
tf20
Notes
a. TA = 25_C unless otherwise noted. PSCIA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW 300 ms duty cycle 3%.
J/SST174 Series
4 Siliconix
P-37653—Rev. D, 25-Jul-94
Typical Characteristics
200
0681042
160
0
–100
–80
–60
–40
–20
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
– Saturation Drain Current (mA)
IDSS
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
IDSS
rDS
120
80
40
18
0
15
12
9
6
368102
250
200
150
100
50
0
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
gfs – Forward Transconductance (mS)
VGS(off) – Gate-Source Cutoff Voltage (V)
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
gfs
gos
4
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.0 V
0.5 V
1.5 V
2.0 V
–25
0 –12 –16 –20
–20
–15
–10
–5
0
–8–4
VGS(off) = 3 V VGS = 0 V
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.5 V
2.0 V
–2
0 –0.3 –0.4 –0.5
–1.6
–1.2
–0.8
–0.4
0
–0.2–0.1
VGS(off) = 3 V
VGS = 0 V
250
200
150
100
50
0–1 –10 –100
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = 1.5 V
3 V
5 V
300
–55 25 125
0
–15 85
On-Resistance vs. Temperature
TA – Temperature (_C)
VGS(off) = 1.5 V
3 V 5 V
ID = –1 mA
rDS changes X 0.7%/_C
240
180
120
60
–35 5 45 65 105
1.0 V
0.5 V
rDS(on) – Drain-Source On-Resistance ( )W
rDS(on) – Drain-Source On-Resistance ( )WrDS(on) – Drain-Source On-Resistance ( )W
S)g – Output Conductance (m
J/SST174 Series
Siliconix
P-37653—Rev. D, 25-Jul-94 5
Typical Characteristics (Cont’d)
20
0 –9 –12–6–3 –15
16
12
8
4
0
Turn-On Switching Turn-Off Switching
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)
tr approximately independent of ID
VDD = –10 V, RG = 220
VGS(H) = 10 V, VGS(L) = 0 V
tON @ ID = –10 mA td(off) VGS(off) = 1.5 V
tf VGS(off) = 1.5 V
tON @ ID = –5 mA
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
50
05
40
20
10
0
30
1234
t
r
@ ID = –5 mA
5 V
5 V
Switching T ime (ns)
Switching T ime (ns)
Capacitance vs. Gate-Source Voltage Gate Leakage Current
Capacitance (pF)
VGS – Gate-Source Voltage (V) VDG – Drain-Gate Voltage (V)
VDS = 0 V
f = 1 MHz
Ciss
Crss
10 nA
100 pA
100 nA
1 nA
– Gate Leakage
IG
10 pA
1 pA
0.1 pA
30
01216820
24
12
6
00 –40–20–10 –50
18
4 –30
10 100 1 k 100 k10 k
100
10
1
Transfer Characteristics Noise Voltage vs. Frequency
f – Frequency (Hz)
TA = –55_C
125_CVDS = –10 V
ID = –0.1 mA
–1 mA
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
–40
0345
–32
–16
–8
0
–24
12
T
A
= 125_C
TA = 25_C
–10 mA
IGSS @ 125_C
IGSS @ 25_C
–10 mA
VDS = –15 VVGS(off) = 3 V
25_C
–1 mA
ID = –1 mA
nVen/Hz
√)(– Noise Voltage
7.5 kW
51 W
1.2 kW
51 W
51 W
1.2 kW
0.1 mF
Sampling
Scope
VGG VDD
RG
VGS(H)
VGS(L)
RL
J/SST174 Series
6 Siliconix
P-37653—Rev. D, 25-Jul-94
Switching Time Test Circuit
174 175 176 177
VDD –10 V –6 V –6 V –6 V
VGG 20 V 12 V 8 V 5 V
RL* 560 W750 W1800 W5600 W
RG* 100 W220 W390 W390 W
ID(on) –15 mA –7 mA –3 mA –1 mA
*Non-inductive
Input Pulse Sampling Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
