SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features * For general purpose applications * The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the Mini-MELF case with type designations LL101A thru LL101C, in the DO-35 case with type designations SD101A through SD101C and in the SOD-323 case with type designations SD101AWS through SD101CWS. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Marking SA Remarks SD101AWS SD101AWS-GS18 or SD101AWS-GS08 Tape and Reel SD101BWS SD101BWS-GS18 or SD101BWS-GS08 SB Tape and Reel SD101CWS SD101CWS-GS18 or SD101CWS-GS08 SC Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Peak inverse voltage Power dissipation (Infinite Heat Sink) Forward current Maximum single cycle surge 1) 10 s square wave Part Symbol Value Unit SD101AWS VRRM 60 V SD101BWS VRRM 50 V SD101CWS VRRM 40 V Ptot 1501) mW IF 30 mA IFSM 2 A Valid provided that electrodes are kept at ambient temperature Document Number 85680 Rev. 1.4, 15-Jul-05 www.vishay.com 1 SD101AWS / 101BWS / 101CWS Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 6501) C/W Junction temperature Tj 1251) C Storage temperature range TS - 65 to 150 C Thermal resistance junction to ambient air 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition IR = 10 A Reverse breakdown voltage Leakage current Forward voltage drop Min V(BR)R 60 Typ. Max Unit V SD101BWS V(BR)R 50 V SD101CWS V(BR)R 40 V VR = 50 V SD101AWS IR 200 nA SD101BWS IR 200 nA VR = 30 V SD101CWS IR 200 nA IF = 1 mA SD101AWS VF 0.41 V SD101BWS VF 0.40 V SD101CWS VF 0.39 V SD101AWS VF 1 V SD101BWS VF 0.95 V SD101CWS VF 0.90 V SD101AWS Ctot 2.0 ns SD101BWS Ctot 2.1 ns SD101CWS Ctot 2.2 ns trr 1 ns VR = 0 V, f = 1 MHz Reverse recovery time Symbol VR = 40 V IF = 15 mA Junction capacitance Part SD101AWS IF = IR = 5 mA, recover to 0.1 IR Typical Characteristics (Tamb = 25 C unless otherwise specified) 100 10 150 C 10 I F - Forward Current ( mA ) I R - Reverse Current ( A ) 125 C 100 C 75 C 1 50 C 0.1 25 C 0.01 0 18479 10 20 30 40 50 VR - Reverse Voltage ( V ) Figure 1. Typical Variation of Reverse Current at Various Temperatures www.vishay.com 2 A B C 1 0.1 0.01 18477 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage ( V ) Figure 2. Typical Variation of Forward Current vs. Forward Voltage Document Number 85680 Rev. 1.4, 15-Jul-05 SD101AWS / 101BWS / 101CWS Vishay Semiconductors 100 2.0 I F - Forward Current ( mA ) 1.8 1.6 C T - Typical Capacitance ( pF ) A B C T j = 25 C 1.4 1.2 A 1.0 B C 0.8 0.6 0.4 80 60 40 20 0.2 0 0 10 20 30 40 0 50 VR - Reverse Voltage ( V ) 18480 0 0.2 Figure 3. Typical Capacitance Curve as a Function of Reverse Voltage 0.4 0.6 0.8 1.0 VF - Forward Voltage ( V ) 18478 Figure 4. Typical Forward Conduction Curve Package Dimensions in mm (Inches) 1.25 (0.049) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.3 (0.012) 0.15 (0.006) max. Mounting Pad Layout 1.40 (0.055) 1.60 (0.062) 1.95 (0.076) 2.50 (0.098) 2.85 (0.112) Cathode Band ISO Method E 1.60 (0.062) 1.5 (0.059) 0.39 (0.015) 17443 1.1 (0.043) Document Number 85680 Rev. 1.4, 15-Jul-05 www.vishay.com 3 SD101AWS / 101BWS / 101CWS Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85680 Rev. 1.4, 15-Jul-05