SD101AWS / 101BWS / 101CWS
Document Number 85680
Rev. 1.4, 15-Jul-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Schottky Diodes
Features
For general purpose applications
The SD101 series is a Metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring.
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications.
These diodes are also available in the Mini-MELF
case with type designations LL101A thru LL101C,
in the DO-35 case with type designations SD101A
through SD101C and in the SOD-323 case with
type designations SD101AWS through
SD101CWS.
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Marking Remarks
SD101AWS SD101AWS-GS18 or SD101AWS-GS08 SA Tape and Reel
SD101BWS SD101BWS-GS18 or SD101BWS-GS08 SB Tape and Reel
SD101CWS SD101CWS-GS18 or SD101CWS-GS08 SC Tape and Reel
Parameter Test condition Part Symbol Value Unit
Peak inverse voltage SD101AWS VRRM 60 V
SD101BWS VRRM 50 V
SD101CWS VRRM 40 V
Power dissipation
(Infinite Heat Sink)
Ptot 1501) mW
Forward current IF30 mA
Maximum single cycle surge 10 µs square wave IFSM 2A
e3
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Document Number 85680
Rev. 1.4, 15-Jul-05
SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RthJA 6501) °C/W
Junction temperature Tj1251) °C
Storage temperature range TS- 65 to 150 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 µA SD101AWS V(BR)R 60 V
SD101BWS V(BR)R 50 V
SD101CWS V(BR)R 40 V
Leakage current VR = 50 V SD101AWS IR200 nA
VR = 40 V SD101BWS IR200 nA
VR = 30 V SD101CWS IR200 nA
Forward voltage drop IF = 1 mA SD101AWS VF0.41 V
SD101BWS VF0.40 V
SD101CWS VF0.39 V
IF = 15 mA SD101AWS VF1V
SD101BWS VF0.95 V
SD101CWS VF0.90 V
Junction capacitance VR = 0 V, f = 1 MHz SD101AWS Ctot 2.0 ns
SD101BWS Ctot 2.1 ns
SD101CWS Ctot 2.2 ns
Reverse recovery time IF = IR = 5 mA,
recover to 0.1 IR
trr 1ns
Figure 1. Typical Variation of Reverse Current at Various
Temperatures
100
10
1
0.1
0.01 10 20 30 40050
75 °C
50 °C
25 °C
150 °C
125 °C
100 °C
V
R
- Reverse Voltage(V)
I - Reverse Current ( µA)
R
18479
Figure 2. Typical Variation of Forward Current vs. Forward Voltage
0.01
0.1
1
10
0 0.4 0.6 0.8 1.00.2
A
B
C
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18477
SD101AWS / 101BWS / 101CWS
Document Number 85680
Rev. 1.4, 15-Jul-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Typical Capacitance Curve as a Function of Reverse
Voltage
18480
10 20 30 400
0
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0.2
0.4
50
T
j
=25
°C
CBA
C - Typical Capacitance ( pF )
T
V
R
- Reverse Voltage(V)
Figure 4. Typical Forward Conduction Curve
A
B
C
0 0.4 0.6 0.8 1.00.2
60
20
80
40
0
100
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18478
17443
Cathode Band
0.3 (0.012)
2.85 (0.112)
2.50 (0.098)
1.95 (0.076)
1.60 (0.062)
1.1 (0.043)
1.5 (0.059)
0.15 (0.006) max.
1.25 (0.049) max.
0.1 (0.004) max. 0.25 (0.010) min.
1.60 (0.062)
1.40 (0.055)
0.39 (0.015)
ISO Method E
Mounting Pad Layout
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Document Number 85680
Rev. 1.4, 15-Jul-05
SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany