W7E D MB 8235605 O0242eb b MBSTIEG PNP AF Transistors 7-3>- (7 BCX 51 --- BCX 53 STEMENS AKTIENGESELLSCHAF _ @ For AF driver and output stages E @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BCX 54... BCX 56 (NPN) c B Type | Marking | Type | Marking | Ordering code | Package BCX 61-6 AB BCX 52-16 AM Refer to index SOT 89 BCX 51-10 AC BCX 53-6 AJ BCX 51-16 AD BCX 53-10 AK BCX 52-6 AF BCX 53-16 AL BCX 62-10 AG Maximum ratings Parameter Symbol | BCX 51 | BCX 52 | BCX 53 Unit Collector-emitter voltage Voeo 45 60 80 Vv Collector-base voltage Vopo 45 60 400 Vv Emitter-base voltage VeBo 5 5 Vv Collector current Ie 1 A Peak collector current Tom 1,5 A Base current Tg 100 mA Peak base current Tem 200 mA Total power dissipation Prot 1 Ww Ta = 25C Junction temperature q 150 C Storage temperature range | 7stg 65...+ 150 C Thermal resistance Finda $125 K/W junction - ambient package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Siemens 283 Q7E D MM 8235605 O0e4ec7? & MBSIEG SIEMENS AKTIENGESELLSCHAF BCX 51 --- BCX 53 7-33-17 Electrical characteristics at Ta = 25C, unless otherwise specified DC characteristics Symbol min typ max Unit Collector-emitter breakdown voltage Ver) CEO Ie =10MA BCX 51 45 - - Vv BCX 52 60 - - Vv BCX 53 80 - - Vv Collector-base breakdown voltage V(BR) CBO Ig = 100 pA BCX 51 45 - - Vv BCX 52 60 - - Vv BCX 53 100 - - Vv Emitter-base breakdown voltage Vier) EBO 5 - - Vv Te = 10 yA Collector cutoff current Toso Vca = 30V - - 100 nA Vee = 30V, Ta = 150C - - 20 pA Emitter cutoff current TeBo - - 20 nA Ves =4V DC current gain) AFE Io= 5mA, Vce=2V 25 - - - To = 150 mA, Voce = 2V BCX 51, BCX 52, BCX 53-6 40 63 700 - BCX 51, BCX 52, BCX 53-10 63 100 160 - BCX 51-16, BCX 52-16, BCX 53-16 100 160 250 - Ic = 500 mA, Vce = 2V 25 ~ - - Collector-emitter saturation voltage) Vcesat | - - 0,5 Vv Tc = 500 mA, Ig = 50mA Base-emitter voltage) VBE - - 1 Vv Tg = 500 mA, Vce = 2V AC characteristics Symbo! min typ max Unit Transition frequency fr - 125 - MHz Ig = 50 MA, Vee = 10 V, f= 20 MHz *) Pulse test: < 300 us, D = 2%. 284 Siemens W7E D MM 8235605 O0e4224 T MBSIEG SIEMENS AKTIENGESELLSCHAF BCX 51 - BCX 53 Total power dissipation Pio: = f(Ta) Collector current Jc = f (Vee) Vce=2V W mA 4,2 vw 5 tot 1, 0 I 4 103 0,8 5 0,6 0? 5 0,4 10 0,2 5 0 40 0 50 100 150 C 0 02 04 06 8608 10 12 q Veg Pulse handling capabllity rin = f(t) Transition frequency fr = f (Jc) (standardized) Vce = 10V K W MHz 10 0? 5 Sn f 5 2 0? 5 2 ! we we 0 03 0? 107 Ws 10 5 1! 5 0? 5 10mA >t I Siemens 285 4?E D WM 8235605 0024229 1 MMSIEG STEMENS AKTIENGESELLSCHAF BCX 51 --- BOX 53 OC current gain fre = F(T) Vce=2V y? 5 ve y' p nw 5 0 5? 5 WmA |i 5 10? Coliector cutoff current Ico = f(7a) Vcp = 30V 40 5 Jepo 10? 5 10? 5 10' 5 10 5 10" 0 50 100 150 C 286 I T-33-/7 Collector-emitter saturation voltage I. = f(Vce sat) bre = 10 mA 0 5 v 5 0 0 0 02 04 06 Ye sat op Vv Base-omitter saturation voltage J, = f (Vac sat) Are = 10 mA ve 5 sa 5 0 0 y 0 02 0% 06 08 19 Voc sat WV Siemens